Infineon Technologies IPB60R230P6ATMA1

Overview

IPB60R230P6 from Infineon Technologies is a 600 V, 230 mΩ superjunction N-channel MOSFET in D²PAK (TO-263) package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 16.8 A continuous drain current at T_C = 25°C, 31 nC total gate charge, and 4.2 µJ output energy loss at 400 V - enabling compact, cooler-running server power supplies and industrial adapters.

For engineers reviewing the IPB60R230P6 datasheet, IPB60R230P6 pinout, IPB60R230P6 application, or IPB60R230P6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven ZVS capability, dv/dt ruggedness up to 100 V/ns, and body diode commutation robustness at 500 A/µs.

Technical Context

This CoolMOS™ P6 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping profile to simultaneously reduce conduction loss (R_DS(on)) and switching loss (E_oss, Q_g). Its gate plateau voltage of 6.1 V ensures stable turn-on under wide V_GS drive conditions.

The MOSFET supports high-speed hard switching at 400 V bus voltage with 12 ns turn-on delay and 6 ns fall time (R_G = 3.4 Ω), while maintaining 100 V/ns dv/dt ruggedness and 500 A/µs body diode di/dt rating - critical for reliable operation in discontinuous conduction mode (DCM) PFC.

Key Specifications

Pinout & Package

IPB60R230P6 uses the PG-TO263-3-1 (D²PAK) surface-mount package with isolated tab. The drain connects to the large copper pad (tab), enabling direct thermal coupling to PCB copper pour. Standard lead-free plating and halogen-free mold compound meet industrial-grade JEDEC qualification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPP60R230P6 and IPW60R230P6, IPB60R230P6 offers identical electrical performance in a space-optimized D²PAK package - delivering best-in-class power density for automated SMT production while maintaining full thermal and ruggedness equivalence.

Availability

IPB60R230P6 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and UPS inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPB60R230P6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

The CoolMOS™ P6 product line was engineered to deliver lowest R_DS(on) × Q_g figure-of-merit for 600 V superjunction MOSFETs - targeting high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for IPB60R230P6 at 100°C case temperature?

The maximum continuous drain current is 10.7 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (0.99 °C/W) and maximum junction temperature (150°C), ensuring safe operation without exceeding thermal limits in real-world heatsink conditions.

Does IPB60R230P6 require a gate resistor for stable operation?

Yes - a 3.4 Ω gate resistor is used in the datasheet's dynamic test conditions (Table 7) to suppress ringing and control dV/dt during switching. For practical designs, gate resistance must be selected based on layout parasitics and driver capability; typical values range from 2.2 Ω to 10 Ω to balance switching speed, EMI, and gate driver stress.

Can IPB60R230P6 replace older CoolMOS™ P5 devices in existing designs?

Yes - IPB60R230P6 is a direct drop-in replacement for IPB60R230P5 in most cases, offering identical pinout, package, and voltage rating, plus improved E_oss (−22%) and Q_g (−11%). Layout changes are not required, though gate drive strength may be reduced due to lower Q_g, improving system efficiency without hardware modification.

Is the drain tab of IPB60R230P6 electrically isolated?

No - the drain tab in the D²PAK (PG-TO263) package is electrically connected to Pin 2 (Drain) and forms the primary high-voltage power node. It must be routed over isolated copper areas or use insulating thermal interface materials when mounted to grounded heatsinks to prevent short circuits.