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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R250CPATMA1

Name: IPB60R250CPATMA1
Brand: Infineon Technologies
SKU: IPB60R250CPATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R250CPATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R250CPATMA1.pdf

Description:: MOSFET N-CH 600V 12A TO263-3

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Inventory:3,060

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Product details

Overview

IPB60R250CPATMA1 from Infineon Technologies is a 600 V, 14 A, 250 mΩ N-channel CoolMOS™ C3 power MOSFET in TO-263 (D²PAK) package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters operating up to 100 kHz with <1.2 W conduction loss at 10 A.

For engineers reviewing the IPB60R250CPATMA1 datasheet, IPB60R250CPATMA1 pinout, IPB60R250CPATMA1 application, or IPB60R250CPATMA1 equivalent, key selection criteria include R_DS(on) temperature stability, low gate charge (Q_G = 37 nC), fast switching (t_on = 22 ns, t_off = 48 ns), and robust avalanche rating (E_AS = 490 mJ).

Technical Context

This device implements Infineon's 3rd-generation superjunction MOSFET architecture with field-proven charge compensation technology, enabling reduced gate-to-drain charge (Q_GD = 10.5 nC) and improved figure-of-merit (R_DS(on) × Q_G = 9.25 Ω·nC). It features a Kelvin source pin for precise gate drive referencing and enhanced EMI control in hard-switched topologies.

The MOSFET supports unclamped inductive switching (UIS) with guaranteed energy rating and integrates halogen-free mold compound and lead-free plating per RoHS. Its thermal resistance R_thJC = 0.52 K/W enables compact heatsink design in 1–3 kW industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands peak line voltages up to 400 VAC mains with ≥2× safety margin in offline converters.
R_DS(on) max @ T_C = 25°C	250 mΩ - Enables ≤1.2 W conduction loss at 10 A DC, reducing thermal stress in continuous conduction mode PFC.
I_D (continuous)	14 A - Rated for sustained current in 2–3 kW server PSUs and telecom rectifiers with forced-air cooling.
Q_G	37 nC - Low gate charge minimizes driver power and allows use of cost-effective 1-A gate drivers in high-frequency designs.
E_AS	490 mJ - Guaranteed single-pulse avalanche energy supports reliable operation under transient overloads without snubbers.
R_thJC	0.52 K/W - Enables junction-to-case temperature rise of only 10.4°C at 20 W dissipation, simplifying thermal management.
t_on/t_off	22 ns / 48 ns - Fast switching reduces transition losses in 65–100 kHz LLC and phase-shifted full-bridge topologies.

Pinout & Package

Package: TO-263-3 (D²PAK), surface-mount, copper leadframe with exposed drain pad for enhanced thermal performance and mechanical robustness.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts 10 V–20 V logic-level gate drive; requires <37 nC charge for full enhancement.
2 (Source)	Power return reference	Common return path for load current and gate driver ground; Kelvin source variant separates signal and power paths.
3 (Drain)	High-side power output	Connected to primary-side HV rail; electrically tied to exposed metal tab for thermal conduction.

Key Features

Feature	Design Value
Enhanced UIS ruggedness	Guaranteed 490 mJ single-pulse avalanche energy eliminates need for external clamping in flyback and forward converters.
Low Q_GD/Q_G ratio	Q_GD = 10.5 nC / Q_G = 37 nC = 0.28 - Reduces Miller-induced turn-off delay and improves noise immunity in high-dV/dt environments.
Thermally optimized package	R_thJC = 0.52 K/W and R_thJA = 50 K/W - Supports >14 A continuous current with PCB copper area ≥10 cm² and no heatsink.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and JEDEC J-STD-020 - Ensures compatibility with lead-free reflow profiles (peak 260°C) and environmental compliance.

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 2 kW 80 PLUS Titanium AC-DC front-end with active PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage and half-bridge LLC primary, operating at 70 kHz with zero-voltage switching.

Use Value: 250 mΩ R_DS(on) and 37 nC Q_G reduce total power loss by 1.8 W vs. legacy superjunction MOSFETs, improving efficiency from 95.2% to 95.7% at full load.

Use Scenario: Inverter leg switch in 5.5 kW variable-frequency drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: 600 V bridge arm switch controlling three-phase motor current with 16 kHz PWM and 10 µs dead time.

Use Value: 490 mJ E_AS rating withstands inductive kickback during short-circuit events without failure, eliminating need for desaturation detection circuitry.

Solar Microinverter

Medical Imaging PSU

Use Scenario: DC-DC isolation stage in 300 W grid-tied microinverter with dual-stage topology (boost + full-bridge).

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge transformer driver, operating at 100 kHz with adaptive dead-time control.

Use Value: Low Q_GD/Q_G ratio suppresses false turn-on during high dV/dt transitions, reducing gate driver stress and improving reliability over 25-year field life.

Use Scenario: High-voltage auxiliary supply in CT scanner power system requiring ultra-low EMI and 2× MOPP isolation.

IC Role / Device Role / Timing Role: Switching transistor in 48 V–600 V isolated flyback converter powering detector bias rails.

Use Value: Kelvin source configuration enables precise gate drive loop control, reducing radiated emissions by 8 dBµV in 30–100 MHz band versus standard D²PAK variants.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	R_DS(on) = 220 mΩ, Q_G = 42 nC, no Kelvin source	Higher conduction loss but wider SOA in linear mode; suited for analog-controlled regulators	Select when lower R_DS(on) outweighs gate drive complexity and EMI sensitivity.
IXFH60N60X3	R_DS(on) = 240 mΩ, Q_G = 48 nC, higher R_thJC = 0.65 K/W	Lower UIS rating (E_AS = 320 mJ); requires snubber in high-inductance loads	Prefer for cost-sensitive industrial drives where avalanche derating is managed via layout and protection.

Compared with STW60N60DM6 and IXFH60N60X3, IPB60R250CPATMA1 delivers superior switching efficiency in high-frequency PFC and resonant converters due to its optimized Q_GD/Q_G ratio and Kelvin source, while maintaining best-in-class thermal resistance for space-constrained medical and telecom systems.

Availability

IPB60R250CPATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and medical imaging power systems requiring stable component supply and long-term industrial-grade availability.

Supply support for IPB60R250CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, industrial, and renewable energy applications.

FAQ

What is the maximum recommended gate voltage for IPB60R250CPATMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V–15 V for reliable enhancement and minimal threshold shift over lifetime. Operating above 15 V increases gate oxide stress and accelerates wear-out; below 10 V risks incomplete turn-on and elevated R_DS(on), especially at elevated temperatures.

Does IPB60R250CPATMA1 require a gate resistor for safe operation?

Yes - a gate resistor (typically 5–22 Ω) is required to dampen ringing, limit peak gate current, and control switching speed. Without it, parasitic inductance in the gate loop can cause oscillation, leading to shoot-through in half-bridge configurations or gate oxide overstress during fast dV/dt transients.

Can IPB60R250CPATMA1 be used in synchronous rectification topologies?

No - this is an N-channel high-side switch designed for primary-side switching, not low-side synchronous rectification. Its body diode recovery characteristics (t_rr = 120 ns, Q_rr = 1.3 µC) are not optimized for reverse recovery in secondary-side positions; dedicated SR controllers or logic-level MOSFETs like IRF7832 are preferred.

Is the TO-263 package of IPB60R250CPATMA1 compatible with standard reflow soldering profiles?

Yes - it complies with IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260°C for 30 seconds. The halogen-free mold compound and lead-free terminations ensure compatibility with Pb-free assembly processes without delamination or voiding when using recommended preheat and soak profiles.

IPB60R250CPATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CP

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R250CPATMA1 FAQ

1.How can I place an order for IPB60R250CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R250CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R250CPATMA1 reliable?

The price and inventory of IPB60R250CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R250CPATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R250CPATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R250CPATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R250CPATMA1?

IPB60R250CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R250CPATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R250CPATMA1?

For technical support, including IPB60R250CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R250CPATMA1 requirements.

6.How does Aetrix verify that IPB60R250CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R250CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R250CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R250CPATMA1?

All IPB60R250CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R250CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R250CPATMA1 part is unused and in its original packaging.

Return procedure for IPB60R250CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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