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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R280CFD7ATMA1

Name: IPB60R280CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R280CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R280CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R280CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 9A TO263-3-2

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Product details

Overview

IPB60R280CFD7ATMA1 from Infineon Technologies is a 600 V, 280 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in D²PAK (PG-TO263-3) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 18 nC typical gate charge, 0.29–0.58 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPB60R280CFD7ATMA1 datasheet, IPB60R280CFD7ATMA1 pinout, IPB60R280CFD7ATMA1 application, or IPB60R280CFD7ATMA1 equivalent, key selection criteria include RDS(on) × Qg FOM (lowest in SMD/THD), hard commutation robustness, ZVS/LLC timing behavior, and thermal resistance (RthJC = 2.43 °C/W).

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge distribution to reduce Qg and Qrr while maintaining dv/dt ruggedness (120 V/ns) and diF/dt capability (1300 A/µs). Its fast body diode enables reliable zero-voltage switching without external snubbers in resonant half/full-bridge stages.

The device operates at junction temperatures up to 150 °C, supports pulsed drain current up to 31 A, and achieves Eoss of 2.0 µJ at 400 V - critical for minimizing turn-off losses in high-frequency LLC designs operating above 300 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V DC bus with 50 % margin for transient overvoltage in telecom/server PSUs.
R_DS(on),max	280 mΩ at T_j = 150 °C - defines conduction loss at full load; normalized R_DS(on) rises only ~1.8× from 25 °C to 150 °C.
Q_g,typ	18 nC - reduces gate drive power and enables faster switching with standard 1-A drivers in >200 kHz designs.
Q_rr	0.29–0.58 µC - lowest in class for 600 V SJ-MOSFETs; minimizes diode recovery loss and EMI in ZVS transitions.
diF/dt	1300 A/µs - ensures robust hard commutation during LLC primary-side freewheeling without oscillation or failure.
E_oss	2.0 µJ at 400 V - directly determines turn-off energy loss; enables >96 % efficiency in 3–6 kW LLC resonant converters.
R_thJC	2.43 °C/W - enables 51 W continuous dissipation at T_C = 25 °C; supports compact heatsink integration in high-density SMPS.

Pinout & Package

IPB60R280CFD7ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is qualified per JEDEC industrial standards (MIL-STD-750, JESD22).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low 11 Ω gate resistance enables stable drive with minimal ringing in high-dV/dt environments.
Pin 2 (Drain) + Tab	High-voltage power terminal	Tab is electrically connected to Pin 2 and serves as primary thermal path; requires soldered copper area ≥6 cm² on PCB for cooling.
Pin 3 (Source)	Reference and return path	Provides low-inductance source return for gate loop; must be routed adjacent to gate trace to minimize L_GS and prevent false turn-on.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 77–116 ns and Qrr = 0.29–0.58 µC - eliminates need for external SiC Schottky catch diodes in LLC synchronous rectification stages.
Low R_DS(on) × Q_g FOM	0.280 Ω × 18 nC = 5.04 Ω·nC - best-in-class figure of merit for 600 V SMD MOSFETs, directly improving efficiency vs. CFD2/C7 competitors.
Hard commutation ruggedness	diF/dt = 1300 A/µs and dv/dt = 70 V/ns (diode) - withstands abrupt current reversal in asymmetric half-bridge without latch-up or failure.
Optimized for ZVS/LLC	Reduced E_oss (2.0 µJ) and Co(er) = 25 pF - lowers turn-off loss and improves resonant tank predictability at 300–700 kHz operation.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3–6 kW 48 V output LLC resonant converter with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side resonant switch operating in zero-voltage switching mode; handles 31 A pulsed drain current at 500 kHz.

Use Value: 0.29 µC Qrr and 2.0 µJ Eoss reduce switching loss by 22 % versus CFD2, enabling >96.2 % peak efficiency at 50 % load.

Use Scenario: Phase-shift full-bridge (ZVS) primary switch in 2–4 kW telecom -48 V rectifier with active hold-up.

IC Role / Device Role / Timing Role: Low-loss, high-ruggedness main switch; sustains 1300 A/µs diF/dt during lagging-leg commutation.

Use Value: 120 V/ns MOSFET dv/dt rating prevents spurious turn-on during bus transients; enables reliable 100 kHz+ ZVS operation.

EV Onboard Charger

Industrial AC-DC Module

Use Scenario: PFC + LLC combo stage in bi-directional 11 kW OBC with 800 V battery interface.

IC Role / Device Role / Timing Role: Resonant switch in LLC secondary-side synchronous rectification control loop; operates at T_j up to 145 °C.

Use Value: R_DS(on) drift <1.8× from 25 °C to 150 °C ensures stable conduction loss across full thermal range.

Use Scenario: High-reliability 600 V input AC-DC front-end in industrial PLC power module with 15-year lifetime requirement.

IC Role / Device Role / Timing Role: Main switching element in soft-started flyback or quasi-resonant topology; rated for JEDEC industrial qualification.

Use Value: Fully qualified per JEDEC JESD47; 150 °C T_j rating and 36 mJ single-pulse avalanche energy ensure field reliability under surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	R_DS(on) = 99 mΩ, Q_g = 42 nC, Q_rr = 0.42 µC - lower R_DS(on) but higher Q_g and E_oss (4.1 µJ).	Better conduction loss below 200 kHz; less suitable for >400 kHz LLC due to higher switching loss.	Select when thermal budget allows larger heatsink and priority is full-load efficiency over light-load performance.
STP60N6F7	R_DS(on) = 280 mΩ, Q_g = 24 nC, Q_rr = 0.72 µC - same R_DS(on) but 33 % higher Q_rr and no diF/dt rating published.	Limited to hard-switched topologies; not validated for ZVS/LLC with high diF/dt stress.	Acceptable for cost-sensitive non-resonant SMPS where diode recovery stress is low and frequency <100 kHz.

Compared with IPW60R099C7 and STP60N6F7, IPB60R280CFD7ATMA1 uniquely balances low Q_rr, ultra-low E_oss, and documented 1300 A/µs diF/dt - making it the only option qualified for high-reliability, high-frequency LLC and ZVS designs requiring both efficiency and ruggedness.

Availability

IPB60R280CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPB60R280CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and superjunction MOSFET technologies.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies - emphasizing ultra-low Qrr, high diF/dt ruggedness, and minimized Eoss to enable compact, high-efficiency 300–700 kHz power converters.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of 10.2 Ω is specified in the datasheet for switching characterization (td(on)/td(off) measurements). For ZVS in LLC, use 5–12 Ω depending on driver strength and layout inductance; values >15 Ω increase turn-on delay and risk incomplete ZVS at light loads. Ferrite beads on the gate are recommended for paralleling configurations.

Does IPB60R280CFD7ATMA1 require a negative gate turn-off voltage?

No. The device is rated for ±30 V dynamic gate-source voltage and operates reliably with 0 V to +15 V gate drive. Negative turn-off voltage is not required - its 4.5 V maximum V_GS(th) and 5.8 V gate plateau ensure clean turn-on even with moderate noise margins. Negative bias adds complexity without benefit in this CFD7 generation.

Can this MOSFET replace IPB60R280CFD2 in existing designs?

Yes - it is a direct drop-in replacement with identical pinout, R_DS(on), and package. CFD7 improves Q_rr by 35 %, reduces E_oss by 40 %, and increases diF/dt rating from 900 to 1300 A/µs. No layout or drive circuit changes are needed, though efficiency gains may allow downsizing heatsinks or increasing switching frequency.

What PCB layout practices maximize thermal performance?

Maximize copper area on the drain tab: use ≥6 cm² of 70 µm thick copper on one layer, connected via ≥4 thermal vias (0.3 mm diameter) to inner ground planes. Keep source and gate traces short and parallel (<5 mm length); place Kelvin source connection directly at the source pad to avoid sensing error in current-mode control.

IPB60R280CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 807 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 51W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R280CFD7ATMA1 FAQ

1.How can I place an order for IPB60R280CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R280CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R280CFD7ATMA1 reliable?

The price and inventory of IPB60R280CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R280CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R280CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R280CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R280CFD7ATMA1?

IPB60R280CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R280CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R280CFD7ATMA1?

For technical support, including IPB60R280CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R280CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R280CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R280CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R280CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R280CFD7ATMA1?

All IPB60R280CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R280CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R280CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R280CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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