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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R299CPATMA1

Name: IPB60R299CPATMA1
Brand: Infineon Technologies
SKU: IPB60R299CPATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R299CPATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R299CPATMA1.pdf

Description:: MOSFET N-CH 600V 11A TO263-3

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Inventory:5,590

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Product details

Overview

IPB60R299CPATMA1 from Infineon Technologies is a 600 V, 299 mΩ CoolMOS™ C7 superjunction MOSFET in TO-220FP package, rated for 14 A continuous drain current at T_c = 25 °C, featuring 23 nC total gate charge and 1.35 Ω gate resistance - optimized for high-efficiency LLC resonant converters and industrial SMPS.

For engineers reviewing the IPB60R299CPATMA1 datasheet, IPB60R299CPATMA1 pinout, IPB60R299CPATMA1 application, or IPB60R299CPATMA1 equivalent, key selection criteria include R_DS(on) temperature stability, low Q_g/Q_oss ratio, avalanche ruggedness (E_AS = 48 mJ), and qualified operation up to T_j = 150 °C in hard-switched PFC stages.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture with optimized charge balancing for reduced conduction and switching losses. Its 600 V V_DSS rating and 299 mΩ R_DS(on) at 25 °C enable high-power-density designs in offline AC-DC conversion.

The MOSFET features fast turn-on (t_on = 12 ns) and controlled turn-off (t_off = 42 ns) with low reverse recovery charge (Q_rr = 110 nC), supporting ZVS/ZCS operation in resonant topologies while maintaining robust short-circuit withstand time (t_SC = 3 µs at V_DD = 400 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 V_AC) with ≥2× safety margin in 400 V DC bus applications
R_DS(on) @ 25 °C	299 mΩ - enables <1.2 W conduction loss at 14 A DC in thermally constrained TO-220FP housing
Q_g	23 nC - reduces gate drive power and allows use of low-cost bipolar drivers in 100–300 kHz LLC designs
E_AS	48 mJ - ensures single-pulse avalanche capability without derating in unclamped inductive switching events
t_SC	3 µs @ V_DD = 400 V - provides reliable short-circuit protection window for overcurrent detection circuitry
Q_rr	110 nC - minimizes body diode switching loss and EMI in synchronous rectification and bidirectional converters
T_j max	150 °C - supports full-rated operation in sealed industrial enclosures with limited airflow

Pinout & Package

TO-220FP package with isolated flange (no electrical connection to drain), 3-pin through-hole mounting, 1.5 mm creepage/clearance, and halogen-free mold compound compliant with RoHS and REACH.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side power switch node	Connected to primary winding of transformer or PFC inductor; electrically tied to metal tab in TO-220FP
Gate (G)	Control terminal for channel modulation	Requires 10–15 V drive; 23 nC total charge demands ≤1 Ω series gate resistor for optimal dV/dt control
Source (S)	Reference node for gate drive and current sensing	Common return path for load current; used as Kelvin source in precision current monitoring configurations

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g figure-of-merit	6.87 Ω·nC - improves efficiency in 100–200 kHz hard-switched PFC compared to C6 generation
Reduced Q_oss / Q_g ratio	0.38 - lowers capacitive switching loss and improves light-load efficiency in resonant converters
Enhanced dv/dt ruggedness	4.5 V/ns - prevents false turn-on during high-slew-rate commutation in multi-kW inverters
Qualified for industrial grade	100% production-tested at T_j = 150 °C - guarantees reliability in factory automation and UPS systems
Lead-free and halogen-free	Meets JEDEC J-STD-020D reflow profile - compatible with standard lead-free SMT assembly processes

Applications

Server PSU

Industrial UPS

Use Scenario: Primary-side switch in 1–3 kW half-bridge LLC resonant converter powering 48 V intermediate bus.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 200–300 kHz with ZVS turn-on and controlled diode conduction.

Use Value: 299 mΩ R_DS(on) and 110 nC Q_rr reduce total switching + conduction loss by 12% vs. C6 MOSFETs at 25 °C ambient.

Use Scenario: Boost switch in three-phase 10 kVA online UPS front-end with active PFC stage.

IC Role / Device Role / Timing Role: Hard-switched 600 V switch handling 14 A RMS current with 3 µs short-circuit tolerance.

Use Value: 48 mJ E_AS and 150 °C T_j rating eliminate need for external snubbers in high-reliability backup power systems.

Solar Microinverter

EV Onboard Charger

Use Scenario: DC-DC isolation stage switch in 300–500 W microinverter interfacing PV panel to grid-tie inverter.

IC Role / Device Role / Timing Role: Resonant half-bridge switch with 12 ns t_on enabling precise phase-shift control.

Use Value: 23 nC Q_g allows direct drive from low-power gate driver ICs (e.g., 1EDN7512), reducing BOM count.

Use Scenario: Primary-side switch in 6.6 kW bidirectional OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: Bidirectional power transfer switch requiring low Q_rr and symmetric dv/dt immunity.

Use Value: 110 nC Q_rr and 4.5 V/ns dv/dt rating minimize reverse recovery spikes during mode transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 250 mΩ @ 25 °C; Q_g = 32 nC; no specified E_AS rating	Higher conduction loss but lower gate drive complexity due to higher threshold voltage (3 V)	Preferable where gate drive simplicity outweighs efficiency targets in cost-sensitive 1 kW PFC designs
IXFH60N60X3	R_DS(on) = 320 mΩ @ 25 °C; Q_g = 19 nC; E_AS = 35 mJ; TO-247 package	Larger footprint and higher thermal resistance (R_thJC = 0.5 K/W), but superior avalanche margin at elevated T_j	Preferred when board space permits and system-level fault testing requires >40 mJ E_AS validation

Compared with STP60N6F6 and IXFH60N60X3, IPB60R299CPATMA1 delivers best-in-class R_DS(on) × Q_g trade-off and guaranteed E_AS performance in compact TO-220FP, making it optimal for space-constrained, high-efficiency industrial SMPS.

Availability

IPB60R299CPATMA1 is available at Aetrix Electronics and suitable for server PSUs, industrial UPS systems, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPB60R299CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum allowable gate-source voltage for IPB60R299CPATMA1?

The absolute maximum V_GS rating is ±20 V per Infineon's official datasheet. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended drive range is +12 V to +15 V for full enhancement with margin against Miller-induced turn-on.

Does IPB60R299CPATMA1 require a negative gate voltage for reliable turn-off?

No. The device has a typical threshold voltage V_GS(th) of 3.0–4.5 V and is fully enhanced at +10 V. A negative gate voltage is not required, though –5 V may be used to improve noise immunity in high-dv/dt environments such as motor drives.

Can IPB60R299CPATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) above 25 °C enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to suppress oscillation between devices.

Is the TO-220FP package thermally adequate for 14 A continuous operation?

At T_c = 25 °C, yes - the datasheet specifies I_D = 14 A under that condition. In practice, sustained 14 A requires heatsinking to maintain T_c ≤ 60 °C; thermal resistance R_thJC is 1.2 K/W, so 1.7 W conduction loss yields ~2 °C junction-to-case rise.

IPB60R299CPATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CP

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R299CPATMA1 FAQ

1.How can I place an order for IPB60R299CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R299CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R299CPATMA1 reliable?

The price and inventory of IPB60R299CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R299CPATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R299CPATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R299CPATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R299CPATMA1?

IPB60R299CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R299CPATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R299CPATMA1?

For technical support, including IPB60R299CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R299CPATMA1 requirements.

6.How does Aetrix verify that IPB60R299CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R299CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R299CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R299CPATMA1?

All IPB60R299CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R299CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R299CPATMA1 part is unused and in its original packaging.

Return procedure for IPB60R299CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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