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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R330P6ATMA1

Name: IPB60R330P6ATMA1
Brand: Infineon Technologies
SKU: IPB60R330P6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R330P6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R330P6ATMA1.pdf

Description:: MOSFET N-CH 600V 12A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,469

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Product details

Overview

IPB60R330P6ATMA1 from Infineon Technologies is a 600 V, 330 mΩ superjunction N-channel power MOSFET in TO-220 package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 12 A continuous drain current at 25°C, 33 A pulsed current, and features ultra-low gate charge (22 nC) and output charge (3 µJ at 400 V), enabling compact, cooler-running SMPS in server PSUs and telecom rectifiers.

For engineers reviewing the IPB60R330P6ATMA1 datasheet, IPB60R330P6ATMA1 pinout, IPB60R330P6ATMA1 application, or IPB60R330P6ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (500 A/µs), and thermal resistance (1.35 °C/W junction-to-case).

Technical Context

This CoolMOS™ P6 device implements a superjunction structure with trench-gate process, delivering low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss (3 µJ at 400 V). Its gate threshold voltage (4.0 V typ.) and plateau voltage (6.1 V) support robust 10–15 V gate drive without overvoltage risk.

The MOSFET exhibits high commutation ruggedness (500 A/µs di/dt) and enhanced dv/dt immunity (100 V/ns), making it suitable for fast-switching topologies where parasitic turn-on and avalanche stress are critical. Its body diode reverse recovery charge (3 µC) and time (257 ns) are characterized under 400 V, 5.6 A conditions with 100 A/µs diF/dt.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50% margin for transient overvoltage in industrial PFC stages
R_DS(on) max @ 150°C	330 mΩ - ensures stable conduction loss up to maximum operating junction temperature
Q_g typ	22 nC - enables efficient switching with moderate gate driver strength (e.g., 1–2 A peak)
E_oss @ 400 V	3 µJ - reduces turn-off energy loss and improves light-load efficiency in resonant converters
dv/dt ruggedness	100 V/ns - prevents false triggering during high-slew-rate switching in half-bridge configurations
Body diode di/dt	500 A/µs - sustains fast reverse recovery in synchronous rectification and LLC freewheeling paths
T_j max	150 °C - qualified for industrial-grade operation per JEDEC J-STD-20 and JESD22

Pinout & Package

IPB60R330P6ATMA1 is housed in a TO-220 package with isolated tab (drain-connected), standard lead configuration, and Pb-free plating. Thermal resistance is 1.35 °C/W (junction-to-case), supporting direct heatsink mounting with M3 screws (60 Ncm torque).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10–15 V logic-level gate drive; requires <6.7 Ω series resistance to damp ringing
Pin 2 (Drain)	High-voltage power input	Connected to internal die backside (tab); electrically tied to heatsink in non-isolated mounting
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate drive and current sensing; carries full load current

Key Features

Feature	Design Value
Superjunction architecture	Enables 330 mΩ R_DS(on) at 600 V while maintaining low Q_g and E_oss for high-frequency operation
Enhanced dv/dt immunity	100 V/ns rating eliminates need for external snubbers in most 100–300 kHz hard-switched topologies
High commutation ruggedness	500 A/µs di/dt tolerance allows reliable operation in asymmetric half-bridge and active clamp flyback
Industrial qualification	JEDEC J-STD-20 reflow and JESD22 reliability testing ensure long-term stability in 24/7 embedded power systems
Low E_oss energy	3 µJ stored output capacitance energy reduces turn-off losses by >30% vs. prior-generation CoolMOS™ P5

Applications

Server Power Supply Units

Telecom Rectifier Modules

Use Scenario: Primary-side switch in 80+ Titanium-certified 1–3 kW AC-DC front-end with continuous conduction mode (CCM) PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, switching at 65–100 kHz with zero-voltage switching assist.

Use Value: 330 mΩ R_DS(on) and 22 nC Q_g enable >96% system efficiency while reducing heatsink size by 25% versus legacy 650 V MOSFETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in -48 V telecom rectifiers operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Main power switch managing 380–400 V DC input, subject to high dv/dt and repetitive avalanche stress during soft-start.

Use Value: 100 V/ns dv/dt ruggedness and 247 mJ single-pulse avalanche energy eliminate gate driver desaturation events and improve startup reliability.

LCD/LED TV Power Adapters

Industrial UPS Inverters

Use Scenario: PFC boost switch in compact 150–300 W open-frame adapters targeting EU CoC Tier 2 efficiency requirements.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or transition-mode (TM) PFC switch operating up to 150 kHz with variable frequency.

Use Value: Low E_oss (3 µJ) and fast turn-off (40 ns total) minimize switching loss across wide load range, improving light-load efficiency by 2–3%.

Use Scenario: Half-bridge IGBT replacement in 1–5 kVA online UPS inverters using unipolar SPWM with 16 kHz carrier.

IC Role / Device Role / Timing Role: High-side/low-side switching device in H-bridge output stage driving transformer-coupled LC filter.

Use Value: 500 A/µs body diode di/dt and 150 °C T_j rating sustain high-current freewheeling during overload and short-circuit conditions without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R330P6	Same die, TO-220 package with non-isolated tab; R_thJC = 1.35 °C/W identical	Requires insulating washer for heatsink mounting; lower creepage vs. IPB variant	Select when cost sensitivity outweighs isolation requirement and board layout permits insulated mounting
IPW60R330P6	Same die, TO-247 package; R_thJC = 1.35 °C/W but higher P_tot (125 W vs. 93 W)	Better thermal headroom for 15–20% higher continuous power; larger footprint	Select when >10 A continuous current or >100 W dissipation is required in same ambient conditions

Compared with IPP60R330P6 and IPW60R330P6, IPB60R330P6ATMA1 offers identical electrical performance with reinforced isolation in TO-220 form factor-ideal for space-constrained, safety-critical AC-DC designs requiring creepage compliance without TO-247 real estate.

Availability

IPB60R330P6ATMA1 is available at Aetrix Electronics and suitable for server power supply units, telecom rectifier modules, and industrial UPS inverters requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified industrial-grade reliability.

Supply support for IPB60R330P6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and R&D centers.

The CoolMOS™ P6 product line targets high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power supplies-emphasizing low-loss superjunction MOSFETs with enhanced ruggedness and ease of use.

FAQ

What is the maximum continuous drain current for IPB60R330P6ATMA1 at 100°C case temperature?

The maximum continuous drain current is 7.6 A at T_C = 100°C, derated from 12.0 A at 25°C due to thermal limits. This value is defined by junction temperature cap (150°C) and package thermal resistance (1.35 °C/W), not package current rating alone.

Does IPB60R330P6ATMA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +15 V gate drive. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (6.1 V) are designed for standard positive-only drive; negative bias is unnecessary and not specified in the datasheet.

Can IPB60R330P6ATMA1 be paralleled with identical units?

Yes, but only with gate ferrite beads (or separate totem-pole drivers) per gate to suppress oscillation. The datasheet explicitly recommends this for paralleling due to inherent parameter spread and layout-induced gate loop inductance.

Is the TO-220 tab electrically isolated in IPB60R330P6ATMA1?

Yes-the "B" suffix denotes isolated tab (drain-connected but electrically insulated from mounting surface). This provides 2500 V_rms isolation between drain and heatsink, meeting reinforced insulation requirements for Class I AC-DC adapters.

IPB60R330P6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 370µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 93W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB60R330P6ATMA1 FAQ

1.How can I place an order for IPB60R330P6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R330P6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R330P6ATMA1 reliable?

The price and inventory of IPB60R330P6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R330P6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R330P6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R330P6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R330P6ATMA1?

IPB60R330P6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R330P6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R330P6ATMA1?

For technical support, including IPB60R330P6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R330P6ATMA1 requirements.

6.How does Aetrix verify that IPB60R330P6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R330P6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R330P6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R330P6ATMA1?

All IPB60R330P6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R330P6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R330P6ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R330P6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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