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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R360CFD7ATMA1

Name: IPB60R360CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R360CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R360CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R360CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 7A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,611

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Product details

Overview

IPB60R360CFD7ATMA1 from Infineon Technologies is a 600 V, 360 mΩ ultra-fast body diode superjunction MOSFET in DPAK (TO-252) package, optimized for soft-switching resonant topologies including phase-shift full-bridge and LLC converters. It delivers 14 nC gate charge, 0.28–0.56 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPB60R360CFD7ATMA1 datasheet, IPB60R360CFD7ATMA1 pinout, IPB60R360CFD7ATMA1 application, or IPB60R360CFD7ATMA1 equivalent, key selection criteria include Qrr performance under 400 V bus conditions, hard commutation robustness at diF/dt ≥1300 A/µs, RDS(on) stability up to 150 °C, and compatibility with ZVS gate drive timing constraints.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction cell structure with optimized charge balancing for reduced Qg and Eoss, directly supporting zero-voltage switching transitions. Its internal fast body diode features controlled reverse recovery with trr of 81–122 ns and low Qrr dispersion across temperature.

The MOSFET integrates a monolithic body diode with enhanced dv/dt immunity (70 V/ns reverse, 120 V/ns forward) and supports parallel operation using gate ferrite beads. Thermal design leverages a low RthJC of 2.89 °C/W and SMD-optimized RthJA of 35–45 °C/W on 6 cm² copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V nominal DC bus with 50 % margin for transient overvoltage in telecom/EV charging systems
R_DS(on)	360 mΩ max at T_j = 150 °C - ensures stable conduction loss in high-temperature LLC primary-side switches
Q_g	14 nC typical - enables efficient 100–300 kHz switching with low gate driver power and reduced Miller-induced shoot-through risk
Q_rr	0.28–0.56 µC at V_R = 400 V - minimizes switching loss and EMI during diode commutation in resonant half/full-bridge stages
diF/dt	1300 A/µs - guarantees reliable hard-switching capability during synchronous rectification or freewheeling in asymmetric topologies
E_oss	1.6 µJ at 400 V - reduces turn-on loss in ZVS circuits and improves light-load efficiency versus prior CFD2 generation
T_j max	150 °C - qualified per JEDEC industrial standards for continuous operation in enclosed server PSU environments

Pinout & Package

Package: PG-TO252-3 (DPAK) with exposed drain tab for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; low input capacitance (Ciss = 679 pF) enables fast edge control with minimal driver stress
Pin 2 (Drain / Tab)	High-voltage power terminal	Internally connected to exposed copper tab - must be soldered to PCB copper pour for thermal path and EMI shielding
Pin 3 (Source)	Reference and current return	Serves as local ground reference for gate driver; requires low-inductance layout to maintain dv/dt immunity during switching

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 81–122 ns and Qrr = 0.28–0.56 µC at 400 V - eliminates need for external SiC Schottky in medium-power LLC secondary-side sync rectification
Low R_DS(on) × Q_g FOM	0.36 Ω·nC - improves trade-off between conduction loss and switching loss in 200–500 kHz resonant designs
Enhanced diF/dt ruggedness	1300 A/µs - sustains reliable operation during abrupt current reversal in phase-shifted full-bridge freewheeling paths
Optimized E_oss	1.6 µJ at 400 V - reduces turn-on energy and enables smaller snubber components in ZVS circuits

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter operating at 250 kHz with 54 V output.

IC Role / Device Role / Timing Role: High-side ZVS switch managing 400 V DC bus inversion with precise dead-time control.

Use Value: 0.56 µC Qrr and 1300 A/µs diF/dt ensure clean current commutation without voltage spikes, reducing EMI filter size by 30 %.

Use Scenario: Half-bridge primary switch in 2.5 kW telecom rectifier with 380 V PFC front-end and 48 V isolated output.

IC Role / Device Role / Timing Role: Resonant switch synchronized to phase-shifted PWM for zero-voltage turn-on.

Use Value: 14 nC Qg enables use of low-cost gate drivers while maintaining <10 ns propagation delay matching across paralleled devices.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional LLC switch in 11 kW OBC handling both AC/DC and DC/AC modes with 800 V battery interface.

IC Role / Device Role / Timing Role: Symmetrically driven resonant switch supporting 100–350 kHz variable-frequency operation.

Use Value: RDS(on) drift <1.5× from 25 °C to 150 °C ensures predictable thermal derating and simplifies heatsink sizing.

Use Scenario: Full-bridge inverter stage in 5 kVA industrial UPS delivering 230 V AC from 400 V DC bus with active PFC.

IC Role / Device Role / Timing Role: Hard-switched inverter leg with forced-air cooling and gate ferrite bead stabilization.

Use Value: 120 V/ns forward dv/dt rating prevents spurious turn-on during high-slew-rate bus transients in motor drive backup mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R360CFD7	Same die, TO-252-3 package, identical electrical specs - differs only in tape-and-reel packaging (ATMA1 vs standard reel)	No functional difference; ATMA1 variant optimized for automated SMT placement with tighter reel tension control	Select IPB60R360CFD7ATMA1 for high-volume SMT lines requiring J-STD-033-compliant moisture-sensitive packaging
IPW60R045C7	Lower RDS(on) (45 mΩ), higher Qg (42 nC), same 600 V rating - targets higher-power ZVS where conduction loss dominates	Better suited for >5 kW phase-shifted full-bridge; less optimal for LLC above 300 kHz due to higher switching loss	Choose IPW60R045C7 when thermal budget allows larger heatsink and system prioritizes full-load efficiency over light-load EMI

Compared with IPD60R360CFD7, the ATMA1 variant offers identical performance with enhanced SMT process compatibility; versus IPW60R045C7, it trades lower conduction loss for superior high-frequency switching efficiency and reduced gate drive complexity in sub-3 kW resonant converters.

Availability

IPB60R360CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPB60R360CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching power conversion topologies where low Qrr, high diF/dt, and ZVS-compatible Eoss are critical for efficiency and reliability.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 10.2 Ω gate resistor is specified in the datasheet for characterization at 400 V and 4.0 A. For ZVS in LLC converters, values between 4.7 Ω and 12 Ω maintain sufficient turn-on speed while limiting peak gate current to <2 A and preserving dv/dt immunity. Higher values increase turn-on time and risk incomplete ZVS at light loads.

Can IPB60R360CFD7ATMA1 be paralleled with other CoolMOS™ devices?

Yes - the datasheet explicitly recommends paralleling with ferrite beads on each gate to suppress oscillation. Matching RDS(on) within ±10 % and symmetrical PCB layout are required. Do not mix CFD7 with older CFD2 or C7 generations due to differing Qrr and threshold voltage distributions.

Is the drain tab electrically isolated from the PCB mounting plane?

No - the drain (Pin 2) is internally bonded to the exposed copper tab. When mounted, the tab must be soldered directly to a dedicated drain copper pour. Any isolation requires a thermally conductive but electrically insulating pad (e.g., ceramic-filled thermal interface material), which increases RthJC by ≥1.2 °C/W.

Does this MOSFET require negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. The datasheet specifies ±20 V static and ±30 V dynamic VGS ratings, but negative turn-off is unnecessary. Applying −5 V may improve noise immunity in high-dv/dt environments but adds gate driver complexity without measurable benefit in standard ZVS layouts.

IPB60R360CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 140µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 679 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R360CFD7ATMA1 FAQ

1.How can I place an order for IPB60R360CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R360CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R360CFD7ATMA1 reliable?

The price and inventory of IPB60R360CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R360CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R360CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R360CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R360CFD7ATMA1?

IPB60R360CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R360CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R360CFD7ATMA1?

For technical support, including IPB60R360CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R360CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R360CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R360CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R360CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R360CFD7ATMA1?

All IPB60R360CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R360CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R360CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R360CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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