Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R380P6ATMA1

Name: IPB60R380P6ATMA1
Brand: Infineon Technologies
SKU: IPB60R380P6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB60R380P6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R380P6ATMA1.pdf

Description:: MOSFET N-CH 600V 10.6A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,273

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB60R380P6 from Infineon Technologies is a 600 V, 380 mΩ superjunction N-channel MOSFET in PG-TO263-3 (D²PAK) package, optimized for high-efficiency PFC and hard-switching SMPS. It delivers 10.6 A continuous drain current at 25°C, 19 nC total gate charge, and 2.7 µJ output energy at 400 V - enabling compact, cooler-running server power supplies and telecom rectifiers.

For engineers reviewing the IPB60R380P6 datasheet, IPB60R380P6 pinout, IPB60R380P6 application, or IPB60R380P6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven turn-off loss, dv/dt ruggedness (100 V/ns), and body diode commutation capability (500 A/µs) in high-frequency resonant topologies.

Technical Context

This CoolMOS™ P6 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping to reduce both conduction (R_DS(on) × Q_g = 7.22 Ω·nC) and switching losses (E_oss = 2.7 µJ @ 400 V). Its gate threshold voltage (4.0 V typ.) and plateau voltage (6.1 V) ensure robust noise immunity and predictable drive timing in 100–300 kHz PFC stages.

The MOSFET features enhanced avalanche ruggedness (E_AS = 210 mJ), 150°C max junction temperature, and 1.5 °C/W junction-to-case thermal resistance in D²PAK. Its body diode supports fast recovery (t_rr = 232 ns, Q_rr = 2.1 µC) without external snubbers in critical conduction mode (CRM) operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for universal-input (85–265 VAC) offline PFC and primary-side switching up to 400 V DC bus.
R_DS(on),max	380 mΩ @ T_j = 150°C - ensures <1.5 W conduction loss at 6.7 A continuous current, enabling thermally constrained PCB layouts.
Q_g,typ	19 nC - low gate charge reduces driver power and enables use of cost-effective 1-A gate drivers in 100–200 kHz designs.
E_oss@400V	2.7 µJ - minimizes turn-off energy loss, directly improving efficiency in hard-switched LLC and phase-shifted full-bridge converters.
dv/dt ruggedness	100 V/ns - withstands steep voltage transients during ZVS transitions and prevents spurious turn-on in high-dV/dt environments.
Body diode dI/dt	500 A/µs - supports high-slew-rate commutation in resonant topologies without oscillation or latch-up risk.

Pinout & Package

IPB60R380P6 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for low-inductance, high-current PCB mounting and thermal transfer to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring ≤10 V drive; 7.8 Ω internal gate resistance limits ringing and simplifies layout.
Pin 2 / Tab	Drain	Main high-voltage power terminal; electrically connected to exposed metal tab for direct thermal coupling and low-inductance high-side switching.
Pin 3	Source	Reference node for gate drive and current sensing; tied to power ground plane with minimal loop area to suppress EMI.

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with 380 mΩ R_DS(on), reducing conduction loss by 35% vs. planar MOSFETs at same die size.
Low E_oss & Q_g	2.7 µJ E_oss and 19 nC Q_g jointly cut switching loss >40% in 200 kHz PFC, allowing smaller magnetics and heatsinks.
150°C junction rating	Supports operation in sealed industrial enclosures without derating below 100°C ambient, extending lifetime in UPS and server PSUs.
High dv/dt immunity	100 V/ns rating eliminates need for gate resistors >10 Ω in high-frequency bridge legs, preserving switching speed.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 1U 1200 W server PSU operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and delivering 10.6 A continuous output.

Use Value: 380 mΩ R_DS(on) and 2.7 µJ E_oss reduce total losses by 1.8 W per device vs. prior-gen SJ-MOSFET, lowering thermal stress on 2-oz copper layers.

Use Scenario: Boost PFC stage in -48 V telecom rectifier with universal AC input and 96% target efficiency.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch managing 600 V transient surges and 29 A pulsed current.

Use Value: 500 A/µs body diode dI/dt and 232 ns t_rr prevent reverse recovery failure during zero-crossing, eliminating need for SiC diode co-packaging.

LCD TV Power Board

Industrial UPS Inverter

Use Scenario: Half-bridge inverter driving backlight CCFL or LED strings in 43–75 inch LCD TVs with slim chassis.

IC Role / Device Role / Timing Role: High-frequency (150 kHz) switching element in resonant tank circuit with tight EMI constraints.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering from adjacent gate traces, maintaining stable PWM duty cycle under load transients.

Use Scenario: Output H-bridge in 3 kVA online UPS with 150°C ambient requirement and 10-year field life target.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz inverter leg handling 29 A pulse current and 210 mJ single-pulse avalanche energy.

Use Value: 210 mJ E_AS rating allows safe operation during grid fault events without external clamping, reducing BOM count by one TVS per leg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R380P6	Same die, PG-TO220-3 through-hole package; R_thJC = 1.5 °C/W identical, but higher R_thJA (62 vs. 35–45 °C/W on PCB).	Suitable for prototyping or legacy through-hole designs; less efficient thermal dissipation in dense SMT layouts.	Select IPP60R380P6 only when mechanical mounting constraints require screw terminals or manual assembly.
IPD60R380P6	Same die, PG-TO252-3 (DPAK) package; identical R_DS(on) and Q_g, but R_thJC = 1.5 °C/W and R_thJA = 62 °C/W (minimal footprint) or 35–45 °C/W (40 mm × 40 mm copper).	Better suited for space-constrained consumer adapters where D²PAK footprint is prohibitive but thermal budget allows 40 mm² copper.	Choose IPD60R380P6 for cost-sensitive, volume-manufactured AC/DC adapters with automated reflow and defined PCB copper area.

Compared with IPP60R380P6 and IPD60R380P6, IPB60R380P6 offers superior thermal performance in SMT production (lower R_thJA on standard PCBs) and higher mechanical reliability in vibration-prone server/UPS environments due to D²PAK's robust solder joint geometry.

Availability

IPB60R380P6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant industrial-grade qualification.

Supply support for IPB60R380P6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with over 30 years of high-voltage device innovation.

The CoolMOS™ P6 product line targets high-efficiency, high-power-density offline power conversion - specifically engineered for 65–300 kHz PFC, resonant, and hard-switched SMPS in datacenter, telecom, and industrial infrastructure.

FAQ

What is the maximum continuous drain current for IPB60R380P6 at 100°C case temperature?

The maximum continuous drain current is 6.7 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.3 datasheet. This value is limited by junction temperature (T_j ≤ 150°C) and thermal resistance (R_thJC = 1.5 °C/W), not package current-carrying capacity alone.

Does IPB60R380P6 require a gate resistor for stable operation in hard-switching applications?

A gate resistor is recommended but not mandatory: the device has an internal 7.8 Ω gate resistance (Table 6), which dampens ringing. For optimal EMI and dv/dt immunity in 200+ kHz designs, a 5–10 Ω external series resistor is advised to fine-tune rise/fall times without compromising switching speed.

Can IPB60R380P6 replace older CoolMOS™ P5 devices in existing designs?

Yes - IPB60R380P6 is pin-compatible and electrically backward-compatible with IPB60R380P5, offering lower R_DS(on) (380 mΩ vs. 420 mΩ), reduced Q_g (19 nC vs. 21 nC), and improved E_oss (2.7 µJ vs. 3.1 µJ), enabling immediate efficiency gains without layout changes.

Is the drain tab of IPB60R380P6 electrically isolated from the PCB mounting surface?

No - the drain tab is internally connected to Pin 2 and is not insulated. When mounted on a heatsink or copper pour, the drain potential appears on the thermal interface surface. Electrical isolation requires a non-conductive thermal pad or insulating washer, especially in high-side configurations.

IPB60R380P6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 877 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB60R380P6ATMA1 FAQ

1.How can I place an order for IPB60R380P6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R380P6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R380P6ATMA1 reliable?

The price and inventory of IPB60R380P6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R380P6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R380P6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R380P6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R380P6ATMA1?

IPB60R380P6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R380P6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R380P6ATMA1?

For technical support, including IPB60R380P6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R380P6ATMA1 requirements.

6.How does Aetrix verify that IPB60R380P6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R380P6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R380P6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R380P6ATMA1?

All IPB60R380P6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R380P6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R380P6ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R380P6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…