Infineon Technologies IPB60R600C6ATMA1

Overview

IPB60R600C6ATMA1 from Infineon Technologies is a 600 V, 11 A (T_C = 25 °C) superjunction N-channel CoolMOS™ C6 power MOSFET optimized for hard-switching and resonant topologies in SMPS, adapters, and lighting ballasts. It features R_DS(on) = 600 mΩ (max), Q_g = 19.5 nC, and E_oss = 110 nJ at V_DS = 400 V - enabling high-efficiency 65–100 W offline flyback and LLC resonant converters.

For engineers reviewing the IPB60R600C6ATMA1 datasheet, IPB60R600C6ATMA1 pinout, IPB60R600C6ATMA1 application, or IPB60R600C6ATMA1 equivalent, key selection criteria include its low gate charge (19.5 nC), ultra-low E_oss (110 nJ), and robust dV/dt ruggedness (4.5 kV/μs), critical for reliable operation in high-frequency, high-voltage AC-DC power stages.

Technical Context

This device implements Infineon's CoolMOS™ C6 technology based on superjunction cell architecture with field-sensing electrode (FSE) for precise threshold control and reduced gate oscillation. Its optimized charge balance enables simultaneous reduction of conduction and switching losses without sacrificing ruggedness.

The MOSFET supports hard-switching up to 100 kHz and resonant operation in LLC half-bridge configurations, with guaranteed unclamped inductive switching (UIS) capability (E_AS = 180 mJ) and 100% avalanche-rated construction. Thermal resistance R_thJC = 1.5 K/W ensures stable junction temperature under continuous 11 A drain current at T_C = 25 °C.

Key Specifications

Pinout & Package

IPB60R600C6ATMA1 uses the TO-220FP (Full-Pak) package: insulated plastic case with isolated drain tab, 3-pin vertical mounting, 15.7 mm × 10.4 mm footprint, and 4.5 mm height. The drain is internally connected to the metal tab for direct heatsink attachment while maintaining electrical isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R099C6 and STP60N6F6, IPB60R600C6ATMA1 delivers optimal trade-off between gate drive simplicity (19.5 nC), low conduction loss (600 mΩ), and ultra-low E_oss (110 nJ), making it uniquely suited for compact, high-efficiency 65–100 W offline converters where thermal and layout constraints dominate.

Availability

IPB60R600C6ATMA1 is available at Aetrix Electronics and suitable for LED drivers, server PSUs, laptop adapters, and industrial SMPS requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IPB60R600C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with R&D centers across Europe, Asia, and the US.

This part belongs to the CoolMOS™ C6 family - engineered specifically for high-efficiency, high-frequency AC-DC conversion in consumer, computing, and industrial power supplies, emphasizing reduced switching loss and improved thermal behavior over legacy superjunction devices.

FAQ

What is the maximum continuous drain current for IPB60R600C6ATMA1?

The maximum continuous drain current is 11 A at case temperature T_C = 25 °C with adequate heatsinking. At T_C = 100 °C, the rated current drops to 6.5 A due to thermal derating. This value assumes TO-220FP mounting on a 10 cm² copper area with 1 mm thickness and no forced airflow.

Does IPB60R600C6ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and limit peak gate current. For typical 12 V gate drive and 65–100 kHz operation, a 10 Ω non-inductive resistor placed close to the gate pin is recommended. Values between 5 Ω and 22 Ω allow tuning of switching speed versus EMI and shoot-through risk.

Can IPB60R600C6ATMA1 be used in place of older CoolMOS™ C3 or CFD parts?

Yes - it is a direct drop-in replacement for IPB60R600C3 and IPB60R600CFD in most PCB layouts, offering identical pinout, voltage rating, and thermal footprint. Key improvements include 25% lower E_oss, 15% lower Q_g, and enhanced dV/dt immunity, enabling higher efficiency without layout changes.

Is the TO-220FP package electrically isolated, and what is its isolation voltage rating?

Yes - the TO-220FP package provides reinforced electrical isolation between the drain tab and leads. Its isolation voltage is rated at 2500 V_AC for 1 minute per UL 60747-5-1, verified by Infineon's internal testing. This enables safe use in Class II isolated power supplies without additional insulating hardware.