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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R600CP

Name: IPB60R600CP
Brand: Infineon Technologies
SKU: IPB60R600CP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R600CP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R600CP.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB60R600CP from Infineon Technologies is a 600 V, 3.3 A CoolMOS™ CP superjunction power MOSFET in PG-TO263 package, featuring R_DS(on) = 0.54 Ω (typ) at 25 °C, Q_g = 21 nC (typ), and 144 mJ single-pulse avalanche energy. It delivers ultra-low gate charge and extreme dv/dt ruggedness (480 V/ns) for hard-switching SMPS topologies including PFC and auxiliary supplies.

For engineers reviewing the IPB60R600CP datasheet, IPB60R600CP pinout, IPB60R600CP application, or IPB60R600CP equivalent, key selection criteria include its 600 V V_(BR)DSS, 2.1 K/W R_thJC, 220 ns t_rr body diode, and JEDEC-qualified reliability for industrial power conversion designs.

Technical Context

This device employs Infineon's CoolMOS™ CP trench-gate superjunction architecture optimized for high-voltage hard-switching operation. Its low R_DS(on) × Q_g figure-of-merit enables reduced conduction and switching losses simultaneously, while the 480 V/ns dv/dt rating ensures robustness against voltage transients in discontinuous conduction mode (DCM) and critical conduction mode (CrCM) PFC stages.

The integrated fast-recovery body diode (t_rr = 220 ns, Q_rr = 2.3 µC) supports efficient reverse recovery in bridge-leg configurations, and its 150 °C maximum junction temperature with 2.1 K/W thermal resistance allows high-power density layouts on minimal PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands 600 V drain-source blocking voltage at T_j = 25 °C, enabling use in universal-input offline SMPS.
R_DS(on) max @ 25 °C	0.6 Ω - Ensures low conduction loss at rated current; typ. 0.54 Ω improves efficiency in 3.3 A continuous operation.
Q_g typ	21 nC - Reduces gate drive power and enables faster switching with standard 10 V gate drivers.
E_AS	144 mJ - Supports single-pulse avalanche capability under 50 V clamp, enhancing system robustness during overvoltage events.
t_rr	220 ns - Limits reverse recovery losses in totem-pole PFC and half-bridge topologies with synchronous rectification.
R_thJC	2.1 K/W - Enables 60 W dissipation at 25 °C case temperature, supporting compact heatsink integration in space-constrained designs.
dv/dt ruggedness	480 V/ns - Sustains rapid voltage transients without spurious turn-on, critical for high-frequency flyback and resonant converters.

Pinout & Package

IPB60R600CP uses the PG-TO263 (D²PAK) surface-mount package with three terminals: Drain (pins 1–3, tab), Source (pin 2), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current path and thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pins 1–3)	Main high-side current path	Electrically and thermally connected to PCB copper pour; handles full load current and dissipates heat directly to board.
Source (Pin 2)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable gate control and accurate current monitoring in high-di/dt applications.
Gate (Pin 1)	Control input for channel conduction	Requires <20 V drive; 1.5 Ω internal gate resistance limits ringing and simplifies external gate resistor selection.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	Enables simultaneous reduction of conduction and switching losses-critical for >100 kHz SMPS operating at high efficiency targets.
Extreme dv/dt ruggedness	Rated at 480 V/ns, preventing false triggering during fast voltage transitions in high-frequency hard-switched converters.
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for industrial temperature range (−55 °C to 150 °C), ensuring long-term stability in demanding environments.
Fast body diode with low Q_rr	2.3 µC reverse recovery charge minimizes energy loss and EMI generation during commutation in bridge-based topologies.
Pb-free, RoHS-compliant plating	Meets global environmental compliance requirements without compromising solderability or thermal performance in reflow assembly.

Applications

Server PSU Primary Switch

Industrial PFC Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with universal AC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost PFC stage.

Use Value: 0.54 Ω R_DS(on) and 21 nC Q_g reduce total losses by >15% vs. legacy MOSFETs, enabling higher power density and lower thermal stress.

Use Scenario: 3 kW industrial motor drive front-end with active PFC and wide ambient temperature range (−40 °C to 85 °C).

IC Role / Device Role / Timing Role: Hard-switched boost switch handling 3.3 A RMS current and 600 V DC-link voltage.

Use Value: 144 mJ E_AS and 150 °C T_j,max ensure reliable operation during line surges and overload conditions without derating.

LED Driver Auxiliary Supply

Telecom Rectifier Module

Use Scenario: Compact 15 W isolated flyback converter powering LED driver control circuitry in outdoor lighting.

IC Role / Device Role / Timing Role: Main switch in DCM flyback topology with 600 V breakdown margin for surge immunity.

Use Value: 480 V/ns dv/dt rating prevents false turn-on during lightning-induced transients on AC mains input.

Use Scenario: 48 V telecom rectifier module with dual-active-bridge isolation and high-efficiency standby mode.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch with fast body diode for zero-voltage switching (ZVS) assist.

Use Value: 220 ns t_rr and low Q_rr minimize dead-time losses and improve light-load efficiency in burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N60DM6	600 V, 0.055 Ω R_DS(on), 75 nC Q_g, TO-220 package	Higher conduction loss at low current but superior thermal mass for low-frequency switching	Prefer for <50 kHz applications where gate drive strength exceeds 2 A and heatsinking is conventional.
IPP60R600C7	600 V, 0.6 Ω R_DS(on), 22 nC Q_g, same PG-TO263 package, CoolMOS™ C7 generation	Improved E_AS (190 mJ) and lower C_oss, but identical pinout and biasing	Select when higher avalanche margin or lower EMI is required without layout change.

Compared with STP60N60DM6, IPB60R600CP offers 3× lower Q_g for high-frequency operation; versus IPP60R600C7, it trades minor avalanche improvement for proven field reliability and cost advantage in established designs.

Availability

IPB60R600CP is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, LED driver auxiliary supplies, and telecom rectifier designs requiring stable component supply across multi-year production cycles.

Supply support for IPB60R600CP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CP product line targets high-efficiency, high-frequency hard-switched power supplies-including server, telecom, and industrial SMPS-where low R_DS(on) × Q_g and robust avalanche capability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPB60R600CP supports 3.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO263 package and must be verified against actual PCB copper area and airflow in the final layout.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The IPB60R600CP has a gate threshold voltage of 2.5–3.5 V and is fully controllable with 0 V to 10 V gate drive. A negative gate voltage is not required; however, driving gate to −5 V may improve noise immunity in high-dv/dt environments without damaging the device.

Can the body diode be used for synchronous rectification in a flyback converter?

Yes-the body diode exhibits t_rr = 220 ns and Q_rr = 2.3 µC at 3.3 A, making it suitable for quasi-resonant and DCM flyback secondary-side rectification. However, for ZVS-assisted synchronous rectification, an external Schottky or MOSFET with lower Q_rr is preferred.

Is the PG-TO263 package lead-free and RoHS-compliant?

Yes. The IPB60R600CP uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. Its solder profile follows IPC-J-STD-020D for moisture sensitivity level (MSL) 1, and no pre-bake is required before reflow assembly.

IPB60R600CP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 220µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R600CP FAQ

1.How can I place an order for IPB60R600CP through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R600CP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R600CP reliable?

The price and inventory of IPB60R600CP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R600CP is usually 5 days.

3.What payment methods are accepted for IPB60R600CP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R600CP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R600CP?

IPB60R600CP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R600CP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R600CP?

For technical support, including IPB60R600CP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R600CP requirements.

6.How does Aetrix verify that IPB60R600CP is sourced from the original manufacturer or authorized distributors?

All IPB60R600CP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R600CP meets industry standards.

7.What is the process for return or replacement of IPB60R600CP?

All IPB60R600CP units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R600CP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R600CP part is unused and in its original packaging.

Return procedure for IPB60R600CP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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