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Infineon Technologies IPB60R950C6ATMA1
- Part No.:
- IPB60R950C6ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB60R950C6ATMA1.pdf
- Description:
- MOSFET N-CH 600V 4.4A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,549
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Product details
Overview
IPB60R950C6 from Infineon Technologies is a 600 V, 0.95 Ω RDS(on) superjunction MOSFET in PG-TO263 (D²PAK) package, optimized for high-efficiency hard-switching and resonant PFC/SMPS stages. It delivers 13 nC total gate charge, 1.3 µJ Eoss at 400 V, and 500 A/µs body diode di/dt, enabling compact, cooler-running server power supplies and telecom rectifiers.
For engineers reviewing the IPB60R950C6 datasheet, IPB60R950C6 pinout, IPB60R950C6 application, or IPB60R950C6 equivalent, key selection criteria include its 650 V VDS rating at Tj,max, 4.4 A continuous drain current at TC = 25 °C, JEDEC industrial-grade qualification, and low FOM (RDS(on) × Qg) for reduced conduction and switching losses.
Technical Context
This CoolMOS™ C6 device implements a charge-compensated superjunction structure with trench-gate design, delivering significantly lower RDS(on) × Qg and Eoss than prior generations. Its 5.4 V gate plateau voltage and 16 Ω gate resistance support stable, low-noise turn-on under standard 10 V gate drive.
The MOSFET features robust 50 V/ns dv/dt ruggedness and 46 mJ single-pulse avalanche energy, enabling reliable operation in high-dV/dt environments like LLC resonant converters. Its body diode exhibits 220 ns reverse recovery time and 1.5 µC Qrr, minimizing commutation loss during ZVS transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - rated blocking voltage for primary-side switching in 400 V DC bus applications |
| RDS(on) max @ 150 °C | 2.22 Ω - ensures thermal stability under full-load, high-temperature operation |
| Qg typ | 13 nC - enables fast, low-loss switching with standard gate drivers (e.g., 1 A peak) |
| Eoss @ 400 V | 1.3 µJ - reduces turn-off loss and improves light-load efficiency in resonant topologies |
| ID,pulse | 12 A - supports short-term overload conditions without thermal runaway |
| di/dt (body diode) | 500 A/µs - sustains high-current commutation in synchronous rectification and ZVS circuits |
| RthJC | 3.41 °C/W - enables 37 W power dissipation at TC = 25 °C with minimal heatsink requirement |
Pinout & Package
IPB60R950C6 is housed in PG-TO263 (D²PAK) surface-mount package with exposed drain pad for thermal enhancement. The package meets MSL1 reflow requirements and supports wave and reflow soldering up to 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives 10 V logic-level gate drive; 16 Ω internal gate resistance limits ringing |
| Pin 2 (Drain) | High-voltage power output | Connected to PCB copper pour for thermal conduction; electrically tied to heat slug |
| Pin 3 (Source) | Power return / reference node | Serves as local ground reference for gate driver; carries full load current |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 0.95 Ω RDS(on) at 600 V while maintaining low Qg and Eoss |
| JEDEC industrial qualification | Validated per J-STD-020 and JESD22 for long-term reliability in harsh environments |
| Low Eoss (1.3 µJ @ 400 V) | Reduces turn-off loss by >30% vs. prior CoolMOS™ C3 in 100 kHz PFC designs |
| 500 A/µs body diode di/dt | Supports zero-voltage switching in LLC and phase-shifted full-bridge converters |
| Pb-free plating & halogen-free mold compound | Complies with RoHS 2011/65/EU and JEDEC JS-709C material standards |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end with interleaved PFC + LLC resonant DC-DC. IC Role / Device Role / Timing Role: High-voltage switching transistor in boost PFC and LLC half-bridge legs. Use Value: 13 nC Qg and 1.3 µJ Eoss reduce switching loss by 18% versus C3 generation, enabling 96.3% peak efficiency at 50% load. | Use Scenario: Input rectification stage in -48 V telecom system with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch handling 400 V DC input and delivering 100 A output via paralleled units. Use Value: 650 V VDS rating at Tj,max provides 30% voltage margin over 400 V bus, ensuring robustness against line surges. |
| LCD TV Power Board | UPS Inverter Stage |
Use Scenario: PFC and main SMPS switch in 200 W integrated power board for 55″ LCD TV. IC Role / Device Role / Timing Role: Hard-switched boost switch operating at 65 kHz with 4.4 A continuous current. Use Value: 3.41 °C/W RthJC allows direct mounting on small copper area, eliminating need for external heatsink. | Use Scenario: H-bridge output stage in 1 kVA online UPS with bidirectional energy flow. IC Role / Device Role / Timing Role: Low-loss switching element in inverter leg, conducting both forward and reverse current via body diode. Use Value: 500 A/µs body diode di/dt and 220 ns trr minimize commutation loss during polarity reversal, improving battery-to-AC conversion efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R950C6 | Same die, TO-220 through-hole package; RthJC = 3.41 °C/W but higher RthJA (62 °C/W) | Better suited for prototyping or low-volume assemblies where manual soldering is preferred | Select when mechanical mounting flexibility or legacy footprint compatibility is required |
| IPD60R950C6 | Same die, TO-252 (DPAK) package; identical RthJC and thermal performance on PCB | Optimized for space-constrained SMD layouts with smaller footprint than D²PAK | Select when board area is critical and thermal interface to PCB is well-controlled |
Compared with IPP60R950C6 and IPD60R950C6, IPB60R950C6 offers the best balance of thermal performance and manufacturability in high-volume SMD production, leveraging the larger copper area of D²PAK for superior power cycling reliability.
Availability
IPB60R950C6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverter stages requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.
Supply support for IPB60R950C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The CoolMOS™ C6 product line targets high-efficiency AC-DC and DC-DC conversion in data center, telecom, and consumer power systems, emphasizing low RDS(on) × Qg and rugged commutation behavior.
FAQ
What is the maximum continuous drain current for IPB60R950C6 at 100 °C case temperature?
The maximum continuous drain current is 2.8 A at TC = 100 °C, as specified in Table 2 of the datasheet. This value reflects thermal derating due to junction-to-case thermal resistance (3.41 °C/W) and safe operating area limitations under sustained conduction.
Does IPB60R950C6 require a gate resistor for stable operation?
A gate resistor is recommended to dampen ringing and control dV/dt during switching. Typical values range from 10 Ω to 22 Ω, depending on gate driver strength and layout parasitics. The device's 16 Ω intrinsic gate resistance helps limit peak current but does not eliminate the need for external tuning.
Can IPB60R950C6 be used in parallel configurations?
Yes, but with precautions: use individual ferrite beads on each gate line or separate totem-pole drivers to ensure balanced turn-on/turn-off. Matching RDS(on) tolerance (±20%) and thermal coupling across paralleled units is critical to prevent current imbalance and thermal runaway.
What is the body diode reverse recovery charge (Qrr) and why does it matter?
Qrr is 1.5 µC at Tj = 25 °C, VR = 400 V, and diF/dt = 100 A/µs. This parameter directly impacts commutation loss in hard-switched and resonant topologies; lower Qrr reduces switching stress and EMI generation during diode turn-off.
IPB60R950C6ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C6
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 280 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 37W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB60R950C6ATMA1 FAQ
1.How can I place an order for IPB60R950C6ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB60R950C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB60R950C6ATMA1 reliable?
The price and inventory of IPB60R950C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R950C6ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB60R950C6ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R950C6ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB60R950C6ATMA1?
IPB60R950C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB60R950C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB60R950C6ATMA1?
For technical support, including IPB60R950C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R950C6ATMA1 requirements.
6.How does Aetrix verify that IPB60R950C6ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB60R950C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R950C6ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB60R950C6ATMA1?
All IPB60R950C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R950C6ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB60R950C6ATMA1 part is unused and in its original packaging.
Return procedure for IPB60R950C6ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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