Infineon Technologies IPB65R045C7ATMA1

Overview

IPB65R045C7ATMA1 from Infineon Technologies is a 650 V, 45 mΩ superjunction N-channel power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency hard-switching and PFC stages. It delivers 93 nC total gate charge, 11.7 µJ output switching energy at 400 V, and supports 212 A pulsed drain current. Used in server PSU front-end converters and telecom rectifiers.

For engineers reviewing the IPB65R045C7ATMA1 datasheet, IPB65R045C7ATMA1 pinout, IPB65R045C7ATMA1 application, or IPB65R045C7ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven hard-switching loss, dv/dt ruggedness up to 100 V/ns, and industrial-grade JEDEC qualification for 150 °C junction operation.

Technical Context

This CoolMOS™ C7 device implements a charge-balanced superjunction structure enabling lower R_DS(on) × Q_g and R_DS(on) × E_oss figures than prior generations. Its 5.4 V gate plateau voltage and 0.85 Ω intrinsic gate resistance support stable drive under fast dV/dt transients.

The MOSFET integrates a robust body diode with 60 A/µs commutation speed and 725 ns reverse recovery time, enabling reliable operation in continuous conduction mode (CCM) PFC without external snubbers in many designs.

Key Specifications

Pinout & Package

IPB65R045C7ATMA1 uses the PG-TO263-3 (D²PAK) package with exposed drain tab for thermal performance. The case serves as the drain connection, enabling low-inductance PCB mounting and direct heatsink attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW65N60DM6 and IXFH60N65X2, IPB65R045C7ATMA1 offers the lowest R_DS(on) × E_oss product and verified 100 V/ns dv/dt immunity-making it optimal for compact, high-efficiency, noise-immune industrial power supplies where thermal headroom and reliability are constrained.

Availability

IPB65R045C7ATMA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPB65R045C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C7 series targets high-efficiency, high-power-density AC/DC and DC/DC conversion in computing, telecom, and renewable energy systems through optimized superjunction physics and industrial qualification.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 3.3 Ω gate resistor is validated in the datasheet for 400 V, 24.9 A switching tests, yielding 20 ns turn-on delay and 82 ns turn-off delay. Values above 5.6 Ω increase switching losses significantly; values below 2.2 Ω risk overshoot and ringing due to PCB trace inductance interacting with 0.85 Ω intrinsic gate resistance.

Can IPB65R045C7ATMA1 be paralleled for higher current capacity?

Yes, but parallel operation requires individual gate ferrite beads (100–330 Ω impedance at 10–100 MHz) or separate totem-pole drivers per device to prevent dynamic current imbalance. Layout symmetry and matched thermal paths are mandatory; mismatched R_DS(on) temperature coefficients make current sharing unstable above 85 °C junction.

Is the drain tab electrically isolated from the PCB mounting surface?

No-the drain tab is the device's Drain terminal (Pin 2) and must be electrically connected to the high-voltage DC bus. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is required unless the heatsink is at the same potential as the drain net. Thermal interface material must maintain dielectric strength ≥1.5 kV RMS.

Does this MOSFET require a negative gate voltage for safe turn-off?

No-turn-off is fully assured with 0 V gate drive. The datasheet specifies ±20 V static and ±30 V dynamic gate-source voltage limits, confirming safe operation with 0 V to +12 V or +15 V drive. Negative bias is unnecessary and not recommended, as it adds complexity without improving dv/dt immunity beyond the rated 100 V/ns.