Infineon Technologies IPB65R065C7ATMA1

Overview

IPB65R065C7ATMA1 from Infineon Technologies is a 650 V, 65 mΩ superjunction N-channel power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 33 A continuous drain current at T_C = 25°C, 64 nC total gate charge, and 8 µJ output switching energy at 400 V - enabling high-frequency operation in server and telecom SMPS.

For engineers reviewing the IPB65R065C7ATMA1 datasheet, IPB65R065C7ATMA1 pinout, IPB65R065C7ATMA1 application, or IPB65R065C7ATMA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, dv/dt ruggedness (100 V/ns), body diode dI/dt capability (60 A/µs), and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This CoolMOS™ C7 device implements a charge-compensated superjunction structure with trench-gate design, delivering lower R_DS(on) × E_oss and R_DS(on) × Q_g than prior generations. Its 0.73 °C/W junction-to-case thermal resistance supports high-power density layouts without forced cooling.

The MOSFET features a 5.4 V gate plateau voltage and 17 ns turn-on delay under 400 V/17.1 A test conditions, with robust 100 V/ns dv/dt immunity and 1.5 V/ns reverse diode dv/dt rating - critical for reliable operation in asymmetric half-bridge and totem-pole PFC topologies.

Key Specifications

Pinout & Package

IPB65R065C7ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for enhanced thermal performance. The tab serves as the drain terminal and must be soldered to a large copper area for optimal heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R041C7 and STP65N6F7, IPB65R065C7ATMA1 offers the best balance of low R_DS(on) × Q_g, industry-leading dv/dt ruggedness, and SMD manufacturability - making it optimal for new 100–200 kHz PFC and SMPS designs targeting high power density and reliability.

Availability

IPB65R065C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply, JEDEC-qualified industrial reliability, and high-frequency switching capability.

Supply support for IPB65R065C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C7 series was developed to extend superjunction MOSFET performance into higher-frequency, higher-efficiency power conversion - specifically targeting next-generation PFC, SMPS, and renewable energy inverters.

FAQ

What is the maximum continuous drain current for IPB65R065C7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 21 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limits of the D²PAK package and ensures safe operation within the 150°C maximum junction temperature rating.

Can IPB65R065C7ATMA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on each gate line or individual totem-pole drivers to suppress oscillation and ensure balanced current sharing. Layout symmetry and matched gate trace lengths are also required per Application Note AN2015-04.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 3.0 V to 4.0 V at T_j = 25°C. This tight threshold window enables predictable turn-on with standard 12 V gate drivers while maintaining noise immunity - no negative bias is needed for reliable off-state hold.

Does IPB65R065C7ATMA1 have avalanche energy rating, and what is its value?

Yes - it has a single-pulse avalanche energy rating (E_AS) of 171 mJ at I_D = 10.2 A and V_DD = 50 V, per Table 2. This rating supports limited unclamped inductive switching events but is not intended for repetitive avalanche operation.