Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPB65R095C7ATMA1

Part No.:
IPB65R095C7ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB65R095C7ATMA1.pdf
Description:
MOSFET N-CH 650V 24A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,256

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPB65R095C7ATMA1 from Infineon Technologies is a 650 V, 95 mΩ RDS(on) superjunction MOSFET in D²PAK (TO-263) package, optimized for high-frequency hard-switching and PFC stages. It delivers 45 nC total gate charge, 5.5 µJ Eoss at 400 V, and 60 A/µs body diode di/dt, enabling high-efficiency server power supplies and telecom rectifiers.

For engineers reviewing the IPB65R095C7ATMA1 datasheet, IPB65R095C7ATMA1 pinout, IPB65R095C7ATMA1 application, or IPB65R095C7ATMA1 equivalent, key selection criteria include its 0.98 °C/W RthJC, 100 V/ns dv/dt ruggedness, and industrial-grade JEDEC qualification-critical for reliable operation in high-density AC-DC converters.

Technical Context

This CoolMOS™ C7 device implements a charge-compensated superjunction structure with trench-gate design, delivering best-in-class RDS(on) × Qg and RDS(on) × Eoss figures of merit. Its 5.4 V gate plateau voltage and low 0.9 Ω gate resistance support robust, low-loss switching control.

The MOSFET integrates a fast-recovery body diode (trr = 800 ns, Qrr = 9 µC) and supports 100 V/ns dv/dt without spurious turn-on. Thermal performance is defined by 0.98 °C/W junction-to-case resistance and 35–45 °C/W junction-to-ambient on standard FR4 PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V maximum blocking voltage-supports 400 V DC bus designs with 1.6× safety margin for telecom and solar inverters.
RDS(on),max 95 mΩ at Tj = 150°C-enables <2.4 W conduction loss at 11.8 A continuous drain current in PFC boost stages.
Qg,typ 45 nC at VGS = 0–10 V-reduces gate driver power demand and enables efficient 100–300 kHz switching in compact SMPS.
Eoss@400V 5.5 µJ-low output capacitance energy minimizes turn-off losses and improves light-load efficiency in hard-switched topologies.
tr/tf 12 ns / 7 ns-fast edge rates support high-frequency operation while maintaining EMI control via external gate resistor tuning.
di/dt (body diode) 60 A/µs-enables reliable zero-voltage switching (ZVS) transitions and reduces commutation stress in resonant converters.

Pinout & Package

IPB65R095C7ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal enhancement. The tab is electrically connected to Pin 2 (Drain).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control terminal requiring ≤20 V static and ≤30 V dynamic gate-source voltage; low 0.9 Ω internal gate resistance simplifies driver interface.
Pin 2 (Tab) Drain Main high-side power terminal; thermally coupled to PCB copper area for heat dissipation-requires isolation if mounted to heatsink.
Pin 3 Source Reference node for gate drive and current sensing; connects to power ground or low-side switch source in half-bridge configurations.

Key Features

Feature Design Value
dv/dt ruggedness 100 V/ns-prevents false turn-on during high-slew-rate transients in bridge-leg and PFC applications.
FOM: RDS(on) × Eoss Best-in-class figure of merit-directly improves full-load efficiency and reduces heatsink size in 1–3 kW systems.
Body diode commutation speed 60 A/µs rated di/dt-supports clean reverse recovery in critical conduction mode (CRM) and transition-mode PFC.
JEDEC industrial qualification Qualified per J-STD-020 (MSL1) and JESD22-ensures reliability under reflow, temperature cycling, and long-term operation at 150°C junction.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter primary-side switch in 1U 2 kW server PSU.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC input with 200 kHz–1 MHz operation.

Use Value: 95 mΩ RDS(on) and 45 nC Qg reduce conduction + switching losses, enabling >96% efficiency at full load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier with 3.3 kW output.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch operating at variable frequency up to 150 kHz.

Use Value: 60 A/µs body diode di/dt and 800 ns trr ensure stable zero-current switching and low EMI generation.

Solar Inverter DC-Link UPS Inverter Stage

Use Scenario: DC-link switching in string-level solar microinverters with 600 V DC input.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in unidirectional buck-boost or H-bridge topology.

Use Value: 700 V VDS(max) rating provides margin against line surges; 0.98 °C/W RthJC enables passive cooling in sealed enclosures.

Use Scenario: Output inverter leg in online double-conversion UPS with 10 kVA capacity.

IC Role / Device Role / Timing Role: Low-loss switching device in IGBT replacement configuration for improved efficiency.

Use Value: 100 V/ns dv/dt immunity prevents shoot-through during high-speed PWM transitions under transient grid conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP65N6F7 650 V, 55 mΩ RDS(on), 72 nC Qg, TO-220 package Higher conduction loss but lower cost; lacks integrated diode optimization for CRM PFC Preferred for cost-sensitive, lower-frequency (<100 kHz), non-critical PFC where thermal margin exists.
IXFH50N65X2 650 V, 65 mΩ RDS(on), 52 nC Qg, TO-247 package Higher RthJC (1.2 °C/W); no JEDEC industrial qualification; higher gate charge than C7 Used where mechanical mounting flexibility outweighs thermal and reliability requirements in industrial UPS.

Compared with STP65N6F7 and IXFH50N65X2, IPB65R095C7ATMA1 offers superior FOM, tighter dv/dt immunity, and JEDEC industrial qualification-making it optimal for high-reliability, high-frequency server and telecom power where thermal density and system efficiency are prioritized.

Availability

IPB65R095C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverter DC-link stages requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPB65R095C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification.

The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC conversion-designed specifically for next-generation server, telecom, and renewable energy systems demanding low-loss, high-ruggedness superjunction MOSFETs.

FAQ

What is the maximum continuous drain current for IPB65R095C7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 15 A at TC = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating reflects thermal derating due to junction-to-case thermal resistance (0.98 °C/W) and ensures safe operation within the 150°C maximum junction temperature limit under sustained load.

Does IPB65R095C7ATMA1 require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor (typically 5–10 Ω) is recommended to dampen ringing and control dV/dt during turn-on/turn-off. The device's 0.9 Ω internal gate resistance and low Ciss (2140 pF) make external gate resistance essential for EMI suppression and preventing oscillation when driven by standard MOSFET drivers.

Can IPB65R095C7ATMA1 be paralleled with identical units in high-current PFC designs?

Yes, but with specific layout and gate drive precautions: use individual ferrite beads on each gate line or separate totem-pole drivers to suppress circulating currents. The datasheet explicitly recommends this approach to ensure balanced current sharing and avoid thermal runaway in parallel configurations.

Is the drain tab of IPB65R095C7ATMA1 electrically isolated from the PCB mounting pad?

No-the drain tab (Pin 2) is electrically connected to the drain terminal and must be isolated from the PCB ground plane using insulating thermal pads or dielectric coatings if mounted to a common heatsink. Direct soldering to copper requires careful clearance design to prevent short circuits in high-voltage topologies.

IPB65R095C7ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ C7
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2140 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
128W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

IPB65R095C7ATMA1 FAQ

1.How can I place an order for IPB65R095C7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R095C7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R095C7ATMA1 reliable?

The price and inventory of IPB65R095C7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R095C7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R095C7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R095C7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R095C7ATMA1?

IPB65R095C7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R095C7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R095C7ATMA1?

For technical support, including IPB65R095C7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R095C7ATMA1 requirements.

6.How does Aetrix verify that IPB65R095C7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R095C7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R095C7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R095C7ATMA1?

All IPB65R095C7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R095C7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R095C7ATMA1 part is unused and in its original packaging.

Return procedure for IPB65R095C7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPB65R095C7ATMA1 Tags

  • IPB65R095C7ATMA1
  • IPB65R095C7ATMA1 PDF
  • IPB65R095C7ATMA1 Datasheet
  • IPB65R095C7ATMA1 Specifications
  • IPB65R095C7ATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPB65R095C7ATMA1
  • Buy IPB65R095C7ATMA1
  • IPB65R095C7ATMA1 Price
  • IPB65R095C7ATMA1 Distributor
  • IPB65R095C7ATMA1 Supplier
  • IPB65R095C7ATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER