Infineon Technologies IPB65R110CFDATMA1

Overview

IPB65R110CFDATMA1 from Infineon Technologies is a 650 V, 31.2 A (T_C = 100 °C), D²PAK-packaged CoolMOS™ CFD2 superjunction MOSFET with R_DS(on) = 0.11 Ω (max), Q_g = 118 nC (typ), and ultra-fast body diode (t_rr = 150 ns, Q_rr = 0.8 µC). It serves as a high-efficiency, high-ruggedness primary-side switch in resonant LLC and ZVS-PWM power stages for server PSUs and telecom rectifiers.

For engineers reviewing the IPB65R110CFDATMA1 datasheet, IPB65R110CFDATMA1 pinout, IPB65R110CFDATMA1 application, or IPB65R110CFDATMA1 equivalent, key selection criteria include body diode commutation robustness (di/dt = 900 A/µs), low E_oss (9.2 µJ @ 400 V), junction-to-case thermal resistance (0.45 °C/W), and industrial-grade JEDEC qualification.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture, integrating a field-stop drift region and optimized charge compensation for simultaneous low conduction loss (R_DS(on) × Q_g FOM = 13.0 Ω·nC) and fast, soft reverse recovery. Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) enables stable drive with standard 10–15 V gate drivers.

The D²PAK package provides low-inductance source connection and 0.45 °C/W R_thJC, supporting high-power density designs. The body diode exhibits controlled reverse recovery (I_RRM = 8.3 A, t_rr = 150 ns) and high dv/dt ruggedness (50 V/ns), enabling reliable operation in hard- and soft-switching topologies without snubbers.

Key Specifications

Pinout & Package

IPB65R110CFDATMA1 uses the surface-mount D²PAK (PG-TO263-3) package with copper-exposed drain pad for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R110CFD and IPP65R110CFD, IPB65R110CFDATMA1 delivers identical electrical performance in a thermally superior D²PAK package optimized for automated SMT assembly, higher power density, and lower thermal impedance in compact server and telecom modules.

Availability

IPB65R110CFDATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPB65R110CFDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with over 30 years of high-voltage power device innovation.

The CoolMOS™ CFD2 product line was engineered specifically for high-frequency resonant and soft-switching topologies in industrial and telecom power conversion, emphasizing body-diode ruggedness and low E_oss without sacrificing R_DS(on).

FAQ

What is the maximum continuous drain current for IPB65R110CFDATMA1 at 100 °C case temperature?

The maximum continuous drain current is 19.7 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.6 datasheet. This rating is limited by junction temperature constraints and assumes proper heatsinking with R_thJC = 0.45 °C/W. At T_C = 25 °C, the rating increases to 31.2 A.

Does IPB65R110CFDATMA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3.5–4.5 V and is fully compatible with 0 V / +12 V or 0 V / +15 V gate drive schemes. A negative gate voltage is not required; however, a brief negative turn-off pulse (e.g., –2 V) may improve noise immunity in high-dv/dt environments without affecting reliability.

How does the body diode performance compare to standard silicon MOSFETs?

IPB65R110CFDATMA1 features an ultra-fast, soft-recovery body diode with t_rr = 150 ns, Q_rr = 0.8 µC, and di/dt capability of 900 A/µs-significantly faster and more rugged than standard planar MOSFETs (typically t_rr > 500 ns, di/dt < 300 A/µs). This eliminates voltage spikes and reduces EMI in resonant circuits.

Can IPB65R110CFDATMA1 be used in place of older CoolMOS™ CFD1 devices?

Yes, it is a direct drop-in replacement for CFD1 equivalents (e.g., IPB65R110CFD1) with identical pinout, voltage rating, and R_DS(on). It improves upon CFD1 with lower E_oss (9.2 µJ vs. ~12 µJ), faster t_rr, and enhanced commutation ruggedness-enabling higher frequency operation without redesign.