Infineon Technologies IPB65R125C7ATMA1
- Part No.:
- IPB65R125C7ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB65R125C7ATMA1.pdf
- Description:
- MOSFET N-CH 650V 18A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,166
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Product details
Overview
IPB65R125C7ATMA1 from Infineon Technologies is a 650 V, 125 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard-switching and PFC applications. It delivers 75 A pulsed drain current, 35 nC total gate charge, and 4.2 µJ output switching energy at 400 V, enabling compact, high-frequency SMPS designs in telecom and server power supplies.
For engineers reviewing the IPB65R125C7ATMA1 datasheet, IPB65R125C7ATMA1 pinout, IPB65R125C7ATMA1 application, or IPB65R125C7ATMA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation speed (55 A/µs), and thermal resistance (1.24 °C/W junction-to-case).
Technical Context
This CoolMOS™ C7 device implements a superjunction architecture optimized for reduced RDS(on) × Qg and RDS(on) × Eoss figures of merit, supporting higher switching frequencies without sacrificing conduction loss. Its gate threshold voltage (3.5 V typ) and plateau voltage (5.4 V) enable robust drive with standard 12 V gate drivers.
The MOSFET features enhanced avalanche ruggedness (89 mJ single-pulse EAS) and high dv/dt immunity (100 V/ns), making it suitable for asymmetric half-bridge and totem-pole PFC topologies where voltage transients and commutation stress are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V AC input rectified systems with 20% margin for line surges |
| RDS(on) max @ 150°C | 125 mΩ - enables low conduction loss in 18 A continuous drain operation at full junction temperature |
| Qg typ | 35 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers |
| Eoss @ 400 V | 4.2 µJ - lowers turn-off loss and improves efficiency in 100–300 kHz hard-switched converters |
| Body diode dI/dt | 55 A/µs - supports fast, controlled commutation in bridge-leg and synchronous rectification scenarios |
| RthJC | 1.24 °C/W - permits 101 W power dissipation with modest heatsinking at TC = 25°C |
| dv/dt ruggedness | 100 V/ns - suppresses false turn-on during high-slew-rate voltage transitions in high-side switching |
Pinout & Package
IPB65R125C7ATMA1 uses the PG-TO263 (D²PAK) package with exposed drain tab for thermal and electrical connection. The plastic body provides isolation while the copper tab ensures low-inductance, high-current drain path and efficient heat transfer to the PCB heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives gate drive signal; low input capacitance (1670 pF Ciss) eases driving |
| Pin 2 (Drain) + Tab | High-voltage power terminal | Connected directly to heatsink; carries full load current and dissipates majority of switching/conduction loss |
| Pin 3 (Source) | Reference and return path | Serves as gate drive reference and current return; low-inductance layout critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction structure | Enables 125 mΩ RDS(on) at 650 V rating-reducing conduction loss by ~25% vs. prior-gen SJ MOSFETs |
| Optimized gate charge profile | Qgd/Qg ratio of ~31% minimizes Miller-induced switching delay and improves controllability |
| Enhanced body diode softness | Reverse recovery charge Qrr = 7 µC with 800 ns trr reduces EMI and snubber stress in discontinuous conduction modes |
| Industrial-grade qualification | Qualified per JEDEC J-STD-20/JESD22-ensures reliability under thermal cycling and humidity exposure in 150°C operating environments |
Applications
| Server PSU Primary Switch | Telecom Rectifier Stage |
|---|---|
Use Scenario: High-density 3 kW front-end converter operating at 150 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch in primary-side hard-switched PWM stage handling 400 V DC bus and 18 A RMS current. Use Value: 125 mΩ RDS(on) and 35 nC Qg reduce both conduction and gate losses, enabling >96% efficiency at full load. | Use Scenario: 48 V telecom rectifier with universal AC input (90–264 V AC) and active PFC + LLC secondary stage. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller with 100 kHz switching frequency. Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during line-voltage zero-crossing transients. |
| Solar Inverter DC-DC Stage | UPS Input Stage |
Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V PV array output to 400 V DC link. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on. Use Value: Low Eoss (4.2 µJ) reduces dead-time loss and improves ZVS range across wide input voltage range. | Use Scenario: Online double-conversion UPS with bidirectional IGBT/MOSFET hybrid inverter and regenerative braking capability. IC Role / Device Role / Timing Role: Auxiliary switch in input rectifier and battery-charging circuit handling 75 A pulse current during surge events. Use Value: 75 A ID,pulse and 89 mJ EAS withstand short-term overload and line fault conditions without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N60DM6 | RDS(on) = 115 mΩ, Qg = 45 nC, Eoss = 5.1 µJ @ 400 V | Higher gate charge increases driver loss; slightly better conduction but worse switching FOM | Prefer when lowest RDS(on) dominates over switching frequency scaling |
| IXFH60N60X3 | RDS(on) = 130 mΩ, Qg = 29 nC, Eoss = 3.8 µJ @ 400 V | Lower Eoss and Qg, but higher RDS(on); less rugged dv/dt (60 V/ns) | Prefer in ultra-high-frequency (>300 kHz) designs where Eoss drives efficiency more than RDS(on) |
Compared with STW65N60DM6 and IXFH60N60X3, IPB65R125C7ATMA1 offers the best balance of RDS(on) × Qg (4.375 Ω·nC) and dv/dt immunity-making it optimal for industrial PFC and hard-switched SMPS where reliability and mid-frequency efficiency are jointly critical.
Availability
IPB65R125C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar DC-DC converters, and UPS input stages requiring stable component supply and long-term industrial-grade availability.
Supply support for IPB65R125C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.
The CoolMOS™ C7 series targets high-efficiency, high-reliability AC-DC and DC-DC conversion in computing, telecom, and renewable energy systems-emphasizing low-loss superjunction performance and robust hard-switching behavior.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The maximum continuous drain current (ID) is 12 A at TC = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (1.24 °C/W) and safe operating area limits under DC conditions.
Does IPB65R125C7ATMA1 require a gate resistor for stability in hard-switching applications?
Yes-a gate resistor (typically 5–15 Ω) is recommended to dampen ringing, control dV/dt during turn-on/off, and prevent parasitic oscillation. The device's 1 Ω typical gate resistance and 1670 pF input capacitance make external RG essential for reliable operation with standard gate drivers.
Can this MOSFET be paralleled for higher current handling?
Yes, but with precautions: gate ferrite beads or individual totem-pole drivers are recommended per gate to ensure balanced dynamic current sharing. The device's positive RDS(on) temperature coefficient supports static current sharing, but layout symmetry and gate loop inductance matching are critical.
Is the drain tab electrically isolated from the package leads?
No-the drain is internally connected to the exposed copper tab and Pin 2. The tab must be mounted to a thermally conductive, electrically isolated heatsink or directly to a PCB copper pour with appropriate isolation barriers, as it carries full high-voltage drain potential.
IPB65R125C7ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 125mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1670 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 101W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB65R125C7ATMA1 FAQ
1.How can I place an order for IPB65R125C7ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB65R125C7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB65R125C7ATMA1 reliable?
The price and inventory of IPB65R125C7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R125C7ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB65R125C7ATMA1?
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4.How is shipping managed for IPB65R125C7ATMA1?
IPB65R125C7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB65R125C7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB65R125C7ATMA1?
For technical support, including IPB65R125C7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R125C7ATMA1 requirements.
6.How does Aetrix verify that IPB65R125C7ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB65R125C7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R125C7ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB65R125C7ATMA1?
All IPB65R125C7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R125C7ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB65R125C7ATMA1 part is unused and in its original packaging.
Return procedure for IPB65R125C7ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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