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Infineon Technologies IPB65R125C7ATMA1

Part No.:
IPB65R125C7ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB65R125C7ATMA1.pdf
Description:
MOSFET N-CH 650V 18A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,166

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Product details

Overview

IPB65R125C7ATMA1 from Infineon Technologies is a 650 V, 125 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard-switching and PFC applications. It delivers 75 A pulsed drain current, 35 nC total gate charge, and 4.2 µJ output switching energy at 400 V, enabling compact, high-frequency SMPS designs in telecom and server power supplies.

For engineers reviewing the IPB65R125C7ATMA1 datasheet, IPB65R125C7ATMA1 pinout, IPB65R125C7ATMA1 application, or IPB65R125C7ATMA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation speed (55 A/µs), and thermal resistance (1.24 °C/W junction-to-case).

Technical Context

This CoolMOS™ C7 device implements a superjunction architecture optimized for reduced RDS(on) × Qg and RDS(on) × Eoss figures of merit, supporting higher switching frequencies without sacrificing conduction loss. Its gate threshold voltage (3.5 V typ) and plateau voltage (5.4 V) enable robust drive with standard 12 V gate drivers.

The MOSFET features enhanced avalanche ruggedness (89 mJ single-pulse EAS) and high dv/dt immunity (100 V/ns), making it suitable for asymmetric half-bridge and totem-pole PFC topologies where voltage transients and commutation stress are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max650 V - supports 400 V AC input rectified systems with 20% margin for line surges
RDS(on) max @ 150°C125 mΩ - enables low conduction loss in 18 A continuous drain operation at full junction temperature
Qg typ35 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers
Eoss @ 400 V4.2 µJ - lowers turn-off loss and improves efficiency in 100–300 kHz hard-switched converters
Body diode dI/dt55 A/µs - supports fast, controlled commutation in bridge-leg and synchronous rectification scenarios
RthJC1.24 °C/W - permits 101 W power dissipation with modest heatsinking at TC = 25°C
dv/dt ruggedness100 V/ns - suppresses false turn-on during high-slew-rate voltage transitions in high-side switching

Pinout & Package

IPB65R125C7ATMA1 uses the PG-TO263 (D²PAK) package with exposed drain tab for thermal and electrical connection. The plastic body provides isolation while the copper tab ensures low-inductance, high-current drain path and efficient heat transfer to the PCB heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives gate drive signal; low input capacitance (1670 pF Ciss) eases driving
Pin 2 (Drain) + TabHigh-voltage power terminalConnected directly to heatsink; carries full load current and dissipates majority of switching/conduction loss
Pin 3 (Source)Reference and return pathServes as gate drive reference and current return; low-inductance layout critical for EMI control

Key Features

FeatureDesign Value
Superjunction structureEnables 125 mΩ RDS(on) at 650 V rating-reducing conduction loss by ~25% vs. prior-gen SJ MOSFETs
Optimized gate charge profileQgd/Qg ratio of ~31% minimizes Miller-induced switching delay and improves controllability
Enhanced body diode softnessReverse recovery charge Qrr = 7 µC with 800 ns trr reduces EMI and snubber stress in discontinuous conduction modes
Industrial-grade qualificationQualified per JEDEC J-STD-20/JESD22-ensures reliability under thermal cycling and humidity exposure in 150°C operating environments

Applications

Server PSU Primary SwitchTelecom Rectifier Stage

Use Scenario: High-density 3 kW front-end converter operating at 150 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in primary-side hard-switched PWM stage handling 400 V DC bus and 18 A RMS current.

Use Value: 125 mΩ RDS(on) and 35 nC Qg reduce both conduction and gate losses, enabling >96% efficiency at full load.

Use Scenario: 48 V telecom rectifier with universal AC input (90–264 V AC) and active PFC + LLC secondary stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller with 100 kHz switching frequency.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during line-voltage zero-crossing transients.

Solar Inverter DC-DC StageUPS Input Stage

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V PV array output to 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on.

Use Value: Low Eoss (4.2 µJ) reduces dead-time loss and improves ZVS range across wide input voltage range.

Use Scenario: Online double-conversion UPS with bidirectional IGBT/MOSFET hybrid inverter and regenerative braking capability.

IC Role / Device Role / Timing Role: Auxiliary switch in input rectifier and battery-charging circuit handling 75 A pulse current during surge events.

Use Value: 75 A ID,pulse and 89 mJ EAS withstand short-term overload and line fault conditions without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW65N60DM6RDS(on) = 115 mΩ, Qg = 45 nC, Eoss = 5.1 µJ @ 400 VHigher gate charge increases driver loss; slightly better conduction but worse switching FOMPrefer when lowest RDS(on) dominates over switching frequency scaling
IXFH60N60X3RDS(on) = 130 mΩ, Qg = 29 nC, Eoss = 3.8 µJ @ 400 VLower Eoss and Qg, but higher RDS(on); less rugged dv/dt (60 V/ns)Prefer in ultra-high-frequency (>300 kHz) designs where Eoss drives efficiency more than RDS(on)

Compared with STW65N60DM6 and IXFH60N60X3, IPB65R125C7ATMA1 offers the best balance of RDS(on) × Qg (4.375 Ω·nC) and dv/dt immunity-making it optimal for industrial PFC and hard-switched SMPS where reliability and mid-frequency efficiency are jointly critical.

Availability

IPB65R125C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar DC-DC converters, and UPS input stages requiring stable component supply and long-term industrial-grade availability.

Supply support for IPB65R125C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ C7 series targets high-efficiency, high-reliability AC-DC and DC-DC conversion in computing, telecom, and renewable energy systems-emphasizing low-loss superjunction performance and robust hard-switching behavior.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (ID) is 12 A at TC = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (1.24 °C/W) and safe operating area limits under DC conditions.

Does IPB65R125C7ATMA1 require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor (typically 5–15 Ω) is recommended to dampen ringing, control dV/dt during turn-on/off, and prevent parasitic oscillation. The device's 1 Ω typical gate resistance and 1670 pF input capacitance make external RG essential for reliable operation with standard gate drivers.

Can this MOSFET be paralleled for higher current handling?

Yes, but with precautions: gate ferrite beads or individual totem-pole drivers are recommended per gate to ensure balanced dynamic current sharing. The device's positive RDS(on) temperature coefficient supports static current sharing, but layout symmetry and gate loop inductance matching are critical.

Is the drain tab electrically isolated from the package leads?

No-the drain is internally connected to the exposed copper tab and Pin 2. The tab must be mounted to a thermally conductive, electrically isolated heatsink or directly to a PCB copper pour with appropriate isolation barriers, as it carries full high-voltage drain potential.

IPB65R125C7ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ C7
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:
4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1670 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
101W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

IPB65R125C7ATMA1 FAQ

1.How can I place an order for IPB65R125C7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R125C7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R125C7ATMA1 reliable?

The price and inventory of IPB65R125C7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R125C7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R125C7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R125C7ATMA1 transactions.

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4.How is shipping managed for IPB65R125C7ATMA1?

IPB65R125C7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R125C7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R125C7ATMA1?

For technical support, including IPB65R125C7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R125C7ATMA1 requirements.

6.How does Aetrix verify that IPB65R125C7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R125C7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R125C7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R125C7ATMA1?

All IPB65R125C7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R125C7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R125C7ATMA1 part is unused and in its original packaging.

Return procedure for IPB65R125C7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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