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Infineon Technologies IPB65R125C7ATMA2
- Part No.:
- IPB65R125C7ATMA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB65R125C7ATMA2.pdf
- Description:
- MOSFET N-CH 650V 18A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:948
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Product details
Overview
IPB65R125C7ATMA2 from Infineon Technologies is a 650 V, 125 mΩ RDS(on) superjunction MOSFET in D²PAK (TO-263) package, optimized for hard-switching PFC and PWM stages. It delivers 35 nC total gate charge, 4.2 µJ Eoss at 400 V, and 55 A/µs body diode di/dt, enabling high-efficiency server and telecom power supplies.
For engineers reviewing the IPB65R125C7ATMA2 datasheet, IPB65R125C7ATMA2 pinout, IPB65R125C7ATMA2 application, or IPB65R125C7ATMA2 equivalent, key selection criteria include its 700 V VDS rating, 1.24 °C/W RthJC, 75 A pulsed drain current, and industrial-grade JEDEC qualification.
Technical Context
This CoolMOS™ C7 device implements a charge-compensated superjunction structure with enhanced dv/dt ruggedness (100 V/ns) and reduced gate-to-drain charge (Qgd = 11 nC). Its 5.4 V gate plateau voltage and low 0.111 Ω typical RDS(on) at 25°C support stable switching in continuous conduction mode PFC.
The MOSFET features a fast-recovery body diode (trr = 800 ns, Qrr = 7 µC) and is rated for 150 °C junction operation. Thermal resistance from junction to case is fixed at 1.24 °C/W, enabling predictable heatsink sizing in high-power density designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V AC input rectified systems with 20% margin for surge and ringing |
| RDS(on) max | 125 mΩ at Tj = 150°C - defines conduction loss in high-temp PFC boost stages |
| Qg typ | 35 nC - determines gate driver power and switching speed in 100–300 kHz designs |
| Eoss @400V | 4.2 µJ - directly impacts turn-on loss and snubber design in hard-switched topologies |
| ID,pulse | 75 A - enables short-term overload handling in UPS and solar inverters |
| RthJC | 1.24 °C/W - sets minimum heatsink thermal resistance for 101 W power dissipation at TC = 25°C |
| Body diode di/dt | 55 A/µs - ensures robust commutation in synchronous rectification and ZVS circuits |
Pinout & Package
IPB65R125C7ATMA2 uses the D²PAK (PG-TO263) surface-mount package with exposed drain tab for thermal performance. The tab is electrically connected to Pin 2 (Drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires ≤30 V dynamic gate-source voltage per datasheet |
| Pin 2 / Tab | Drain | Main high-side power path; tab must be soldered to PCB copper for thermal conduction |
| Pin 3 | Source | Reference node for gate drive; connects to power ground or low-side switch source |
Key Features
| Feature | Design Value |
|---|---|
| dv/dt ruggedness | 100 V/ns - suppresses false turn-on during high-slew-rate switching transients |
| FOM RDS(on) × Eoss | Best-in-class - reduces combined conduction + switching losses in 100–200 kHz PFC |
| JEDEC industrial qualification | J-STD-20 & JESD22 compliant - guarantees reliability under reflow, temperature cycling, and humidity |
| Body diode softness | di/dt = 55 A/µs - minimizes voltage overshoot and EMI during reverse recovery |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Active clamp forward or LLC resonant converter in 1U/2U 1–3 kW rack-mounted PSUs. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in primary PWM stage with 150–200 kHz switching frequency. Use Value: 125 mΩ RDS(on) and 35 nC Qg enable >96% efficiency at full load while maintaining thermal headroom on compact heatsinks. | Use Scenario: Boost PFC front-end for -48 V DC output telecom rectifiers operating from 90–264 V AC input. IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost circuit. Use Value: 650 V rating and 700 V VDS max ensure safe operation during line surges; low Eoss reduces turn-on loss at 100 kHz. |
| Solar Inverter DC-DC Stage | UPS Inverter Bridge |
Use Scenario: Isolated DC-DC converter in string inverters converting 600–1000 V DC input to 400 V bus. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS capability. Use Value: 55 A/µs body diode di/dt and soft recovery minimize voltage spikes during zero-voltage switching transitions. | Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 230 V AC from battery-backed DC bus. IC Role / Device Role / Timing Role: Low-loss switching device in 5–10 kHz PWM-controlled inverter leg. Use Value: 101 W Ptot and 1.24 °C/W RthJC allow sustained 10–15 A RMS output current without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N60DM6 | RDS(on) = 115 mΩ, Qg = 42 nC, Eoss = 5.1 µJ @400V | Higher gate charge increases driver loss; slightly lower RDS(on) improves conduction but raises cost | Prefer when lower conduction loss outweighs gate drive complexity |
| IXTH60N65X2 | RDS(on) = 120 mΩ, Qg = 29 nC, Eoss = 3.8 µJ @400V, TO-247 package | Larger TO-247 package requires more PCB area; lower Eoss benefits higher-frequency designs | Choose for 300+ kHz operation where Eoss dominates loss budget |
Compared with STW65N60DM6 and IXTH60N65X2, IPB65R125C7ATMA2 offers the best balance of RDS(on), Eoss, and Qg in D²PAK form factor-ideal for space-constrained 100–200 kHz PFC and PWM stages requiring JEDEC industrial reliability.
Availability
IPB65R125C7ATMA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply and long-term industrial-grade availability.
Supply support for IPB65R125C7ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC conversion systems-specifically engineered for PFC and hard-switched SMPS in computing, telecom, and renewable energy applications.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
A 10 Ω gate resistor is specified in the datasheet for timing measurements (td(on), tr, etc.) at VGS = 13 V and ID = 8.9 A. For 75 A pulsed operation, a 4.7–6.8 Ω resistor balances switching speed and gate oscillation damping. Higher values increase turn-on time and reduce dv/dt stress but raise switching loss.
Can IPB65R125C7ATMA2 be paralleled in high-current designs?
Yes, but with specific layout precautions: use individual ferrite beads on each gate line and separate totem-pole drivers to prevent dynamic current imbalance. Matched PCB trace lengths and symmetric thermal coupling to the heatsink are mandatory to avoid thermal runaway between paralleled units.
Is the drain tab electrically isolated from the PCB mounting pad?
No-the drain tab is internally connected to Pin 2 (Drain) and must be soldered directly to a large copper pour on the PCB for both electrical connection and thermal conduction. Insulating pads or sil-pad materials are not used unless external isolation is required via an isolated heatsink mount.
What is the safe operating area (SOA) limitation at 100°C case temperature?
At TC = 100°C, the SOA curve limits continuous DC current to ~10 A at 400 V VDS, dropping to ~5 A at 600 V. Pulse operation up to 75 A is permitted only for durations ≤100 µs per the datasheet's SOA graph (Diagram 3), provided peak junction temperature remains below 150°C.
IPB65R125C7ATMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 125mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1670 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 101W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB65R125C7ATMA2 FAQ
1.How can I place an order for IPB65R125C7ATMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB65R125C7ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB65R125C7ATMA2 reliable?
The price and inventory of IPB65R125C7ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R125C7ATMA2 is usually 5 days.
3.What payment methods are accepted for IPB65R125C7ATMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R125C7ATMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB65R125C7ATMA2?
IPB65R125C7ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB65R125C7ATMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB65R125C7ATMA2?
For technical support, including IPB65R125C7ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R125C7ATMA2 requirements.
6.How does Aetrix verify that IPB65R125C7ATMA2 is sourced from the original manufacturer or authorized distributors?
All IPB65R125C7ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R125C7ATMA2 meets industry standards.
7.What is the process for return or replacement of IPB65R125C7ATMA2?
All IPB65R125C7ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R125C7ATMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB65R125C7ATMA2 part is unused and in its original packaging.
Return procedure for IPB65R125C7ATMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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