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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R125CFD7ATMA1

Name: IPB65R125CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB65R125CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R125CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R125CFD7ATMA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPB65R125CFD7ATMA1 from Infineon is a 650 V superjunction MOSFET in D²PAK (PG-TO263-3) package, optimized for zero-voltage switching topologies including LLC and phase-shift full-bridge converters. It delivers 125 mΩ max R_DS(on), 36 nC typical gate charge, 1300 A/µs diode commutation speed, and integrated fast body diode with ESD protection - enabling high-efficiency, high-power-density industrial SMPS in server, telecom, EV charging, and solar applications.

For engineers reviewing the IPB65R125CFD7ATMA1 datasheet, IPB65R125CFD7ATMA1 pinout, IPB65R125CFD7ATMA1 application, or IPB65R125CFD7ATMA1 equivalent, key selection criteria include hard commutation ruggedness (1300 A/µs diF/dt), low temperature coefficient of R_DS(on), ultra-low E_oss (5.1 µJ @ 400 V), and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ CFD7 device employs charge compensation technology to achieve superior soft-switching performance in resonant topologies. Its ultra-fast body diode enables robust hard commutation without external snubbers, while reduced Q_gd/Q_g ratio (11/36 nC) and low Co(er) (64 pF) minimize switching losses during ZVS transitions.

The MOSFET integrates an ESD-protected body diode with 104–156 ns reverse recovery time and 0.52–1.04 µC Q_rr, supporting stable operation under high diF/dt stress. Thermal resistance R_thJC is 1.27 °C/W, enabling efficient heat transfer through the exposed drain tab in D²PAK mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V bus designs with 25% safety margin for transient overvoltage in telecom/solar inverters
R_DS(on) max	125 mΩ @ T_j = 25°C - enables low conduction loss at 19 A continuous drain current (T_C = 25°C)
Q_g typ	36 nC - reduces gate drive power and allows use of smaller, cost-effective gate drivers in high-frequency LLC designs
E_oss @ 400 V	5.1 µJ - lowers turn-on energy loss in ZVS circuits, directly improving light-load efficiency
diF/dt max	1300 A/µs - ensures reliable hard commutation in asymmetric half-bridge and PSFB without oscillation or failure
T_j max	150 °C - qualified per JEDEC for industrial ambient conditions up to 85 °C with derated power
R_thJC	1.27 °C/W - facilitates direct heatsink mounting via drain tab, critical for compact 1–3 kW power supplies

Pinout & Package

IPB65R125CFD7ATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is RoHS-compliant, designed for surface-mount reflow assembly on FR4 PCBs with ≥6 cm² copper area for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Accepts 10 V threshold logic-level drive; gate resistance 8.5 Ω enables precise switching timing control
Pin 2 (Drain) + Tab	High-side power path / Heat sink interface	Exposed metal tab electrically connected to drain; must be soldered to large copper pour for thermal dissipation and low-inductance return
Pin 3 (Source)	Reference node / Return path	Serves as local ground reference for gate drive loop; requires low-inductance layout to suppress ringing during hard commutation

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs diF/dt rating enables reliable hard commutation in PSFB without external freewheeling diodes
Low R_DS(on) tempco	R_DS(on) increases only ~1.5× from 25°C to 150°C - maintains stable conduction loss across operating range
Reduced E_oss	5.1 µJ @ 400 V - cuts turn-on loss by >30% vs. prior CFD2 generation, boosting LLC efficiency at 200–500 kHz
JEDEC industrial qualification	Qualified per JESD47 - guarantees reliability in 10-year server PSU and outdoor solar inverter deployments
Integrated ESD diode	Protects gate against ±2 kV HBM - eliminates need for external gate protection in automated assembly lines

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 1.5 kW front-end LLC resonant converter in 1U rack-mounted server PSU operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-side primary switch in asymmetrical half-bridge LLC topology, handling 400 V DC bus and 12–15 A RMS drain current.

Use Value: Ultra-low E_oss and fast body diode reduce light-load losses by 1.2% and eliminate secondary-side synchronous rectifier complexity.

Use Scenario: 3 kW phase-shift full-bridge (ZVS) rectifier for 48 V telecom distribution, operating continuously at 60–85°C ambient.

IC Role / Device Role / Timing Role: Low-side switch in PSFB with active clamp, managing 72 A pulsed drain current and 1300 A/µs diode commutation stress.

Use Value: Hard commutation ruggedness prevents failure during load transients; 150 °C T_j rating avoids derating in sealed enclosures.

EV Onboard Charger

Solar String Inverter

Use Scenario: Bidirectional CLLC DC-DC stage in 11 kW OBC, switching at 250 kHz with variable bus voltage (350–800 V).

IC Role / Device Role / Timing Role: Primary-side switch in resonant tank, requiring bidirectional conduction capability and low Q_rr (<1 µC) for reverse conduction.

Use Value: 0.52–1.04 µC Q_rr and 104 ns t_rr minimize reverse conduction loss and EMI during mode transitions.

Use Scenario: 5 kW two-stage string inverter with boost PFC + full-bridge inverter, operating in desert environments (T_amb up to 65°C).

IC Role / Device Role / Timing Role: Boost switch in interleaved PFC stage, conducting 19 A continuous current with high dv/dt immunity (120 V/ns).

Use Value: 125 mΩ R_DS(on) and low temperature coefficient maintain <0.8% conduction loss drift across -40°C to +85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7	Lower R_DS(on) (99 mΩ), higher Q_g (44 nC), same CFD7 die	Better conduction loss but higher gate drive loss; requires larger gate driver in >300 kHz designs	Select when thermal budget is constrained and switching frequency ≤200 kHz
STP65N6F7	Higher R_DS(on) (145 mΩ), no integrated ESD diode, lower diF/dt (900 A/µs)	Limited hard commutation capability; requires external gate protection and snubber networks	Select only for cost-sensitive, non-ZVS applications with <100 A/µs diF/dt stress

Compared with IPW65R099CFD7 and STP65N6F7, IPB65R125CFD7ATMA1 offers optimal balance of conduction efficiency, switching loss, and ruggedness for ZVS topologies - delivering highest light-load efficiency and eliminating design compromises in 1–3 kW industrial SMPS.

Availability

IPB65R125CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPB65R125CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure serving industrial, automotive, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters in industrial SMPS and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of 10.2 Ω is specified in the datasheet for characterization (td(on)/td(off) test conditions). For ZVS in LLC, values between 5–15 Ω optimize turn-on delay and dV/dt control without compromising switching speed; values >20 Ω increase switching loss and risk incomplete turn-on at high frequency.

Can IPB65R125CFD7ATMA1 be paralleled, and what layout precautions are required?

Yes, it supports paralleling per Infineon's application note AN2019-04. Critical requirements include individual ferrite beads (≥100 Ω @ 100 MHz) on each gate trace, matched gate loop inductance (<1.5 nH), and symmetrical source routing to avoid current imbalance. Drain tabs must share identical thermal mass.

Does the integrated body diode replace the need for an external freewheeling diode in PSFB?

Yes - its 1300 A/µs diF/dt rating and 104–156 ns t_rr allow direct use as the freewheeling path in PSFB without external diodes. However, layout must minimize source inductance to prevent voltage overshoot during reverse recovery.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA is limited by thermal constraints: maximum continuous ID drops to ~12 A (derated from 19 A at 25°C), and pulse current is restricted to 72 A for ≤100 µs. The device remains within SOA up to 400 V V_DS at this temperature per Figure 3 in the datasheet.

IPB65R125CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 420µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1694 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 98W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R125CFD7ATMA1 FAQ

1.How can I place an order for IPB65R125CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R125CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R125CFD7ATMA1 reliable?

The price and inventory of IPB65R125CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R125CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R125CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R125CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R125CFD7ATMA1?

IPB65R125CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R125CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R125CFD7ATMA1?

For technical support, including IPB65R125CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R125CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB65R125CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R125CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R125CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R125CFD7ATMA1?

All IPB65R125CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R125CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R125CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB65R125CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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