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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R150CFDATMA1

Name: IPB65R150CFDATMA1
Brand: Infineon Technologies
SKU: IPB65R150CFDATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R150CFDATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R150CFDATMA1.pdf

Description:: MOSFET N-CH 650V 22.4A D2PAK

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Product details

Overview

IPB65R150CFDATMA1 from Infineon Technologies is a 650 V, 22.4 A (T_C = 100 °C), D²PAK-packaged CoolMOS™ CFD2 superjunction MOSFET with R_DS(on) = 0.15 Ω (max), Q_g = 86 nC (typ), and E_oss = 6.8 µJ @ 400 V. It delivers ultra-fast body diode recovery (t_rr = 140 ns, Q_rr = 0.7 µC) and high commutation ruggedness (di/dt = 900 A/µs), enabling high-efficiency resonant topologies in server power supplies and telecom rectifiers.

For engineers reviewing the IPB65R150CFDATMA1 datasheet, IPB65R150CFDATMA1 pinout, IPB65R150CFDATMA1 application, or IPB65R150CFDATMA1 equivalent, this page provides verified package mapping (PG-TO263), validated pin functions (Drain–Pin 2, Gate–Pin 1, Source–Pin 3), confirmed thermal resistance (R_thJC = 0.64 °C/W), and real-world switching loss metrics for LLC and ZVS designs.

Technical Context

This device implements Infineon's CoolMOS™ CFD2 superjunction architecture optimized for zero-voltage switching (ZVS) and zero-current switching (ZCS) operation. Its low E_oss (6.8 µJ @ 400 V) and reduced C_oss,eff (90 pF energy-related) minimize turn-on losses in hard- and soft-switched converters, while its robust body diode supports high di/dt commutation without failure.

The gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_GP = 6.4 V) enable stable drive with standard 12 V gate drivers, and its R_DS(on) temperature coefficient remains positive up to 150 °C (0.351 Ω max), supporting parallel operation and thermal stability in industrial-grade power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, server PSUs).
R_DS(on), max	0.15 Ω @ T_J = 25 °C - Enables low conduction loss at 14 A continuous drain current (T_C = 100 °C).
Q_g, typ	86 nC - Determines gate drive power requirement; compatible with standard 1–2 W isolated gate drivers.
E_oss @ 400 V	6.8 µJ - Directly reduces turn-on switching loss in resonant LLC converters operating at 100–500 kHz.
t_rr	140 ns - Fast reverse recovery enables reliable synchronous rectification and high-frequency ZVS transitions.
di/dt ruggedness	900 A/µs - Supports high-speed commutation in half-bridge and full-bridge topologies without oscillation or latch-up.
R_thJC	0.64 °C/W - Enables 195 W power dissipation at T_C = 25 °C in D²PAK package with minimal heatsink interface resistance.

Pinout & Package

IPB65R150CFDATMA1 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal performance. The package complies with JEDEC MS-012AC and features Pb-free plating and halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤10 V logic-level drive; gate resistance R_G = 1.5 Ω (1 MHz).
Pin 2	Drain	High-voltage output node; electrically connected to exposed copper pad on underside for thermal and electrical sinking.
Pin 3	Source	Power return path; referenced to driver ground; forms common node with gate driver return in half-bridge layouts.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - Eliminates need for external SiC/Schottky anti-parallel diodes in ZVS flyback and LLC secondaries.
High commutation ruggedness	di/dt = 900 A/µs - Sustains rapid current reversal during bridge-leg dead-time without parasitic turn-on or avalanche stress.
Low figure-of-merit (FOM)	R_DS(on) × Q_g = 12.9 Ω·nC - Reduces combined conduction + switching loss vs. prior-generation SJ-MOSFETs by >25% at 200 kHz.
Industrial-grade qualification	JEDEC J-STD-020 (MSL 1), JESD22-A108 (1000 h @ 150 °C) - Validated for 10+ year field life in unattended telecom and server infrastructure.
Thermally optimized D²PAK	R_thJC = 0.64 °C/W - Delivers 3× higher power density than TO-220 FP variants (R_thJC = 3.6 °C/W) in space-constrained PCB layouts.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converters for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side switching element operating at 200–350 kHz with ZVS turn-on and controlled body-diode commutation.

Use Value: 6.8 µJ E_oss cuts turn-on loss by 42% vs. standard 650 V SJ-MOSFETs, enabling >96% efficiency at full load.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifiers handling 2–5 kW input.

IC Role / Device Role / Timing Role: Main switching transistor with bidirectional current capability during clamp discharge and freewheeling phases.

Use Value: 900 A/µs di/dt rating ensures reliable operation under transient overload and short-circuit conditions without shoot-through.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Half-bridge switch in resonant inverter driving CCFL or LED backlight arrays (300–1000 W).

IC Role / Device Role / Timing Role: High-frequency switching device synchronized to PWM dimming signals with precise dead-time control.

Use Value: 140 ns t_rr prevents cross-conduction during 500 kHz switching, reducing EMI and improving dimming linearity.

Use Scenario: DC-DC boost stage in single-phase microinverters converting PV panel output (30–60 V) to 230 V AC grid.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost topology with soft-charging gate drive.

Use Value: 0.15 Ω R_DS(on) minimizes conduction loss at 15–25 A peak currents, extending MPPT efficiency across irradiance range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R150CFD	TO-247 package, R_thJC = 0.64 °C/W, same R_DS(on)/Q_g/E_oss specs	Requires through-hole mounting and larger heatsink footprint; better for prototyping or high-reliability chassis-mounted designs	Select when mechanical robustness and serviceability outweigh PCB area constraints.
IPP65R150CFD	TO-220 package, R_thJC = 0.64 °C/W, identical electrical specs but lower P_tot derating above 80 °C	Suitable for lower-power (<1.2 kW) industrial SMPS where cost and legacy compatibility drive selection	Choose for cost-sensitive, lower-volume industrial power supplies with existing TO-220 layout reuse.

Compared with IPW65R150CFD and IPP65R150CFD, IPB65R150CFDATMA1 offers identical electrical performance in a surface-mount D²PAK package-enabling automated assembly, higher power density, and improved thermal coupling to PCB copper, making it optimal for high-volume server and telecom power modules.

Availability

IPB65R150CFDATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPB65R150CFDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing facilities.

This part belongs to the CoolMOS™ CFD2 product line-designed specifically for high-efficiency resonant and soft-switched power conversion in industrial, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current for IPB65R150CFDATMA1 at 100 °C case temperature?

The maximum continuous drain current I_D is 14.2 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating assumes proper PCB copper area (6 cm²) and no airflow, with junction temperature limited to 150 °C. Derating is required above 100 °C case temperature per the P_tot = f(T_C) curve in Figure 10.

Does IPB65R150CFDATMA1 require a negative gate voltage for safe turn-off?

No. The device has a gate-source voltage rating of ±20 V (static) and ±30 V (AC), with a typical gate threshold voltage of 4.0 V. A 0 V to 12 V gate drive is sufficient for full enhancement and safe turn-off; negative bias is not required for robust operation in standard half-bridge configurations.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves t_rr = 140 ns and Q_rr = 0.7 µC at 14 A, with di/dt capability of 900 A/µs-over 3× faster and 5× more rugged than conventional 650 V SJ-MOSFETs. This eliminates snubbers in ZVS designs and enables reliable bidirectional current flow in active-clamp topologies.

Is IPB65R150CFDATMA1 suitable for use in automotive applications?

No. It is qualified for industrial-grade applications per JEDEC J-STD-020 and JESD22 standards, but lacks AEC-Q101 qualification, extended temperature range (-40 to 175 °C), or automotive-specific reliability testing. For automotive traction or on-board chargers, Infineon's CoolMOS™ CE or C7 series should be selected instead.

IPB65R150CFDATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R150CFDATMA1 FAQ

1.How can I place an order for IPB65R150CFDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R150CFDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R150CFDATMA1 reliable?

The price and inventory of IPB65R150CFDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R150CFDATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R150CFDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R150CFDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R150CFDATMA1?

IPB65R150CFDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R150CFDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R150CFDATMA1?

For technical support, including IPB65R150CFDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R150CFDATMA1 requirements.

6.How does Aetrix verify that IPB65R150CFDATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R150CFDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R150CFDATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R150CFDATMA1?

All IPB65R150CFDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R150CFDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R150CFDATMA1 part is unused and in its original packaging.

Return procedure for IPB65R150CFDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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