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Infineon Technologies IPB65R155CFD7ATMA1
- Part No.:
- IPB65R155CFD7ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB65R155CFD7ATMA1.pdf
- Description:
- HIGH POWER_NEW
- Quantity:
- Payment:
- Shipping:
Inventory:6,960
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Product details
Overview
IPB65R155CFD7ATMA1 from Infineon is a 650 V superjunction MOSFET in D²PAK (PG-TO263-3) package, featuring 155 mΩ max RDS(on), ultra-fast body diode (diF/dt = 1300 A/µs), and optimized for zero-voltage switching topologies. It delivers high efficiency in industrial SMPS, server power supplies, telecom rectifiers, and EV charging systems.
For engineers reviewing the IPB65R155CFD7ATMA1 datasheet, IPB65R155CFD7ATMA1 pinout, IPB65R155CFD7ATMA1 application, or IPB65R155CFD7ATMA1 equivalent, key selection criteria include hard commutation ruggedness, low Eoss (4.0 µJ @ 400 V), temperature-stable RDS(on), gate charge profile (Qg = 28 nC), and thermal resistance (RthJC = 1.62 °C/W).
Technical Context
This CoolMOS™ CFD7 device employs charge compensation technology with integrated fast-recovery body diode and ESD protection. Its optimized cell layout reduces switching losses while maintaining robust avalanche capability (EAS = 64 mJ) and high dv/dt immunity (120 V/ns).
The MOSFET supports resonant soft-switching operation via precise control of Qgd/Qgs ratio (8 nC / 7 nC) and low Co(er) (50 pF), enabling stable phase-shift full-bridge and LLC converter designs at bus voltages up to 400 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - Withstands DC bus voltages up to 400 V in ZVS topologies with safety margin |
| RDS(on) max | 155 mΩ @ Tj = 25°C - Enables low conduction loss in high-current primary-side switches |
| Qg typ | 28 nC - Supports efficient gate driving with moderate drive strength requirements |
| Eoss | 4.0 µJ @ 400 V - Reduces turn-on switching loss in resonant converters |
| diF/dt | 1300 A/µs - Ensures reliable hard commutation without oscillation or failure |
| RthJC | 1.62 °C/W - Allows high power dissipation (77 W @ TC = 25°C) with minimal junction-to-case thermal drop |
| ID,pulse | 55 A - Supports peak current handling during transient overload conditions |
Pinout & Package
Package: PG-TO263-3 (D²PAK), surface-mount with exposed drain tab for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives PWM signal; requires gate resistor (RG ≈ 10 Ω typical) to damp ringing |
| Pin 2 (Drain) + Tab | High-side power path | Electrically connected to internal drain; tab provides primary thermal path to PCB copper |
| Pin 3 (Source) | Reference node | Serves as return path for gate drive and load current; critical for stable switching waveform integrity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast body diode | 1300 A/µs commutation speed enables reliable hard-switched transitions without snubbers |
| Low RDS(on) temp coefficient | RDS(on) increases only ~1.8× from 25°C to 150°C - improves current sharing in paralleled configurations |
| Reduced Eoss | 4.0 µJ @ 400 V - cuts turn-on loss by >35% vs. prior CFD2 generation in LLC operation |
| Integrated ESD protection | HBM rating ≥2 kV - eliminates need for external ESD clamps in board-level assembly |
| Avalanche-rated | Single-pulse EAS = 64 mJ - withstands unclamped inductive switching events in industrial environments |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in 3–6 kW 80 PLUS Titanium AC-DC front-end modules. IC Role / Device Role / Timing Role: High-side resonant switch in phase-shift full-bridge topology operating at 100–300 kHz. Use Value: Achieves >97% full-load efficiency due to low Qg and Eoss, while diF/dt rating ensures reliability under dynamic load steps. | Use Scenario: Isolated DC-DC converter input stage in 48 V telecom systems with wide input range (36–75 V). IC Role / Device Role / Timing Role: Synchronous rectifier driver in LLC half-bridge secondary side with adaptive dead-time control. Use Value: Fast body diode recovery (trr = 97 ns typ.) minimizes reverse recovery loss and EMI generation during light-load burst mode. |
| EV Onboard Charger | Solar Inverter Stage |
Use Scenario: Interleaved PFC and DC-DC isolation stage in bi-directional 11 kW OBC units. IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward topology managing regenerative energy during reverse power flow. Use Value: Robust dv/dt immunity (120 V/ns) prevents false triggering during high-slew-rate voltage transients in automotive EMI environments. | Use Scenario: High-voltage DC link switching in string inverters (600–1000 V bus) with transformerless topology. IC Role / Device Role / Timing Role: High-side bridge arm switch in three-level NPC configuration operating at 16–20 kHz. Use Value: Low RDS(on) (155 mΩ) and thermal resistance (1.62 °C/W) enable compact heatsink design while sustaining 150°C junction temperature per JEDEC industrial qualification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R155CFD7XKSA1 | TO-247-3 package; identical die, higher RthJC (0.55 °C/W) but larger copper area for cooling | Better suited for forced-air-cooled industrial UPS where mechanical mounting flexibility is required | Select when thermal interface constraints prevent D²PAK soldering or when higher pulse current derating is needed |
| STP65N155F7 | 155 mΩ RDS(on), 650 V, but slower body diode (diF/dt = 600 A/µs); no integrated ESD diode | Limited to soft-switched applications without hard commutation stress (e.g., fixed-frequency flyback) | Choose only if cost sensitivity outweighs ruggedness requirements and external ESD protection is acceptable |
Compared with IPW65R155CFD7XKSA1 and STP65N155F7, the IPB65R155CFD7ATMA1 offers superior thermal performance in space-constrained SMD layouts and unmatched hard commutation robustness-critical for phase-shift full-bridge and bidirectional EV charger designs where reliability under transient fault conditions is non-negotiable.
Availability
IPB65R155CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for IPB65R155CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters in industrial and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The maximum continuous drain current is 10 A at TC = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating due to junction-to-case resistance (1.62 °C/W) and safe operating area limits under DC conditions.
Does this MOSFET require an external gate resistor for stability?
Yes - a gate resistor of 10.2 Ω is used in the official switching time test circuit (Table 9). Typical design practice uses 10–22 Ω to suppress gate oscillation and control dV/dt, especially when paralleling multiple devices or driving from low-impedance controllers.
Can IPB65R155CFD7ATMA1 be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient and matched threshold voltage (VGS(th) = 3.5–4.5 V) support current sharing. Infineon recommends ferrite beads on each gate line or individual totem-pole drivers to ensure balanced turn-on and prevent oscillatory current imbalance.
Is the drain tab electrically isolated from the PCB mounting pad?
No - the drain tab is internally connected to Pin 2 (Drain) and must be soldered directly to a large copper pour serving as both thermal sink and high-current return path. Electrical isolation requires insulated mounting hardware or thermal interface materials with dielectric properties.
IPB65R155CFD7ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ CFD7
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 155mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1283 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 77W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB65R155CFD7ATMA1 FAQ
1.How can I place an order for IPB65R155CFD7ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB65R155CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB65R155CFD7ATMA1 reliable?
The price and inventory of IPB65R155CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R155CFD7ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB65R155CFD7ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R155CFD7ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB65R155CFD7ATMA1?
IPB65R155CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB65R155CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB65R155CFD7ATMA1?
For technical support, including IPB65R155CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R155CFD7ATMA1 requirements.
6.How does Aetrix verify that IPB65R155CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB65R155CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R155CFD7ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB65R155CFD7ATMA1?
All IPB65R155CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R155CFD7ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB65R155CFD7ATMA1 part is unused and in its original packaging.
Return procedure for IPB65R155CFD7ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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