Infineon Technologies IPB65R190C6ATMA1

Overview

IPB65R190C6ATMA1 from Infineon Technologies is a 650 V, 20.2 A (T_C = 25 °C) superjunction N-channel power MOSFET in PG-TO263 package, optimized for high-efficiency PFC and hard-switching PWM stages. It features R_DS(on) = 0.19 Ω (max), Q_g = 73 nC (typ), E_oss = 5.9 µJ @ 400 V, and 500 A/µs body diode commutation capability - deployed in server PSUs, telecom rectifiers, and LCD TV power supplies.

For engineers reviewing the IPB65R190C6ATMA1 datasheet, IPB65R190C6ATMA1 pinout, IPB65R190C6ATMA1 application, or IPB65R190C6ATMA1 equivalent, key selection criteria include conduction loss (R_DS(on)), switching energy (E_oss), gate charge (Q_g), thermal resistance (R_thJC = 0.83 °C/W), and diode ruggedness (d_i/d_t = 500 A/µs) in high-frequency, high-voltage SMPS designs.

Technical Context

This CoolMOS™ C6 device implements a charge-balanced superjunction structure enabling simultaneous reduction of R_DS(on) × Q_g figure-of-merit and improved E_oss versus prior generations. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) ensures robust noise immunity while maintaining easy gate drive compatibility with standard 12 V controllers.

The MOSFET delivers high commutation ruggedness (d_i/d_t = 500 A/µs, E_AS = 485 mJ) and dv/dt immunity (50 V/ns) without external snubbers in hard-switched topologies. Its low effective output capacitance (C_o(er) = 65 pF) minimizes turn-off losses in resonant converters operating up to 300 kHz.

Key Specifications

Pinout & Package

IPB65R190C6ATMA1 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - standard three-terminal configuration compatible with automated SMT assembly and thermal vias under the drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R190C6 and IPP65R190C6, IPB65R190C6 offers optimal balance of SMT manufacturability, thermal performance (0.83 °C/W), and board-area efficiency - making it preferred for high-volume, high-power-density server and telecom power modules.

Availability

IPB65R190C6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV power boards requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPB65R190C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ C6 product line targets high-efficiency, high-frequency switched-mode power supplies - specifically engineered to replace planar MOSFETs in PFC, resonant, and hard-switched topologies demanding ultra-low loss and robust ruggedness.

FAQ

What is the maximum continuous drain current for IPB65R190C6ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 12.8 A at T_C = 100 °C, as specified in the "Maximum ratings" table of the Final Data Sheet Rev. 2.0. This rating reflects thermal limitation at the case interface and assumes proper PCB copper area and thermal via design per Infineon's recommended layout guidelines for PG-TO263 packages.

Does IPB65R190C6ATMA1 require a gate resistor for reliable operation in hard-switching PFC?

Yes - a gate resistor (typically 5–15 Ω) is required to control dV/dt and prevent parasitic oscillation during turn-on/turn-off. The device's low Q_g (73 nC) and high d_i/d_t (500 A/µs) make gate ring suppression essential; Infineon recommends RG = 10 Ω for 100 kHz PFC with 12 V gate drive and minimal layout inductance.

Can IPB65R190C6ATMA1 be paralleled with identical units in high-current designs?

Yes, but with specific layout precautions: gate ferrite beads (600–1000 Ω @ 100 MHz) on each gate line and individual gate resistors are mandatory to ensure current sharing. The datasheet explicitly states that paralleling without these measures risks thermal runaway due to positive temperature coefficient mismatch in dynamic R_DS(on).

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 6.1 µC, measured at V_R = 400 V, I_F = 11 A, and di_F/dt = 100 A/µs (Table 9). This value is critical for estimating freewheeling loss in synchronous rectification and half-bridge configurations, and is ~25% lower than previous CoolMOS™ C3 generation devices.