Infineon Technologies IPB65R190C7ATMA1

Overview

IPB65R190C7ATMA1 from Infineon Technologies is a 650 V, 190 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, optimized for hard-switching and PFC applications. It delivers 13 A continuous drain current at T_C = 25°C, 23 nC total gate charge, and 2.7 µJ output switching energy at 400 V, enabling high-efficiency server and telecom power supplies.

For engineers reviewing the IPB65R190C7ATMA1 datasheet, IPB65R190C7ATMA1 pinout, IPB65R190C7ATMA1 application, or IPB65R190C7ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation speed (55 A/µs), and D²PAK thermal resistance (1.73 °C/W).

Technical Context

This CoolMOS™ C7 device implements a charge-balanced superjunction structure to achieve best-in-class figure-of-merit (R_DS(on) × E_oss = 0.51 µJ·Ω and R_DS(on) × Q_g = 4.37 mΩ·nC). Its gate plateau voltage of 5.4 V ensures robust turn-on margin under noisy conditions.

The MOSFET features enhanced avalanche ruggedness (57 mJ single-pulse E_AS) and reverse diode dI_F/dt capability up to 55 A/µs-critical for ZVS-capable PFC stages and high-frequency LLC resonant converters operating above 100 kHz.

Key Specifications

Pinout & Package

IPB65R190C7ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. The drain tab is electrically connected to Pin 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R095C7 and STP65N6F7, IPB65R190C7ATMA1 offers optimal balance of switching loss (23 nC Q_g, 2.7 µJ E_oss), ruggedness (100 V/ns dv/dt, 57 mJ E_AS), and industrial qualification-making it preferred for mission-critical telecom and server power.

Availability

IPB65R190C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPB65R190C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C7 product line was engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter and communications infrastructure-emphasizing low E_oss, high dv/dt immunity, and industrial temperature reliability.

FAQ

What is the maximum recommended gate resistor value for IPB65R190C7ATMA1 in a 200 kHz PFC design?

A 10 Ω gate resistor is validated in the datasheet for 400 V, 5.7 A switching tests and provides optimal trade-off between switching loss and EMI. For 200 kHz operation, values between 5–12 Ω maintain safe dv/dt control while limiting gate drive loss to <150 mW using a 1-A driver. Lower values increase ringing risk; higher values degrade efficiency beyond 150 kHz.

Does IPB65R190C7ATMA1 require a negative gate turn-off voltage?

No. The device is specified for ±20 V static and ±30 V dynamic gate-source voltage, and operates reliably with 0 V to 12–15 V gate drive. Negative turn-off is not required due to its high dv/dt immunity (100 V/ns) and low Q_gd/Q_g ratio, which suppresses Miller-induced false turn-on in hard-switching bridges.

Can IPB65R190C7ATMA1 be paralleled with identical units without gate ferrite beads?

No. The datasheet explicitly recommends ferrite beads on each gate or separate totem-pole drivers for paralleling. Without them, mismatched propagation delays and stray inductance cause current imbalance and thermal runaway-even with matched R_DS(on) units-due to the device's fast 11 ns rise time and low gate threshold variation.

Is the drain tab of IPB65R190C7ATMA1 electrically isolated from the PCB ground plane?

No. The drain tab is internally connected to Pin 2 and is not insulated. It must be mounted directly to a thermally conductive, electrically grounded copper area-or isolated via insulating thermal pad if system topology requires floating drain potential. Standard mounting uses soldered tab to PCB ground pour for lowest R_thJC.