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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R190CFDATMA1

Name: IPB65R190CFDATMA1
Brand: Infineon Technologies
SKU: IPB65R190CFDATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R190CFDATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R190CFDATMA1.pdf

Description:: MOSFET N-CH 650V 17.5A D2PAK

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Product details

Overview

IPB65R190CFDATMA1 from Infineon Technologies is a 650 V, 17.5 A (T_C = 100 °C), D²PAK-packaged CoolMOS™ CFD2 superjunction MOSFET with R_DS(on) = 0.19 Ω (max), Q_g = 68 nC (typ), and E_oss = 5.7 µJ @ 400 V - engineered for high-efficiency resonant switching in server SMPS and telecom power supplies.

For engineers reviewing the IPB65R190CFDATMA1 datasheet, IPB65R190CFDATMA1 pinout, IPB65R190CFDATMA1 application, or IPB65R190CFDATMA1 equivalent, this device delivers ultra-fast body diode recovery (t_rr = 120 ns, Q_rr = 0.5 µC), high commutation ruggedness (di/dt = 900 A/µs), and low FOM (R_DS(on) × Q_g) critical for ZVS/ZCS topologies.

Technical Context

This CoolMOS™ CFD2 device implements a superjunction architecture optimized for soft-switching operation, featuring an integrated, robust body diode with controlled reverse recovery characteristics. Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and low gate resistance (R_G = 1 Ω) enable stable drive under high dv/dt conditions up to 50 V/ns.

The device achieves low conduction loss via 0.19 Ω R_DS(on) at 10 V V_GS, while dynamic performance is defined by 12 ns turn-on delay, 6.4 ns fall time, and energy-related output capacitance C_oss,eff = 70 pF - all calibrated for 400 V bus operation in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage enabling use in 400 V DC-link applications with margin for transient overvoltage
R_DS(on), max	0.19 Ω @ T_J = 25 °C - defines conduction loss in continuous current mode; increases to 0.445 Ω at 150 °C
Q_g, typ	68 nC - total gate charge determining driver strength requirement and switching loss trade-off
E_oss @ 400 V	5.7 µJ - stored output energy directly impacting zero-voltage switching (ZVS) capability and dead-time design
t_rr	120 ns - reverse recovery time of integrated body diode, critical for synchronous rectification and half-bridge freewheeling
I_D,pulse	57.2 A - peak pulsed drain current rating supporting short-term overload and startup surge conditions
R_thJC	0.83 °C/W - junction-to-case thermal resistance enabling high-power dissipation when mounted on heatsink

Pinout & Package

IPB65R190CFDATMA1 is housed in a surface-mount D²PAK (PG-TO263) package with standard three-terminal configuration: drain connected to exposed pad (pin 2), gate at pin 1, and source at pin 3. The package supports reflow soldering per MSL Level 1 and provides low thermal resistance (R_thJC = 0.83 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring <10 V drive; R_G = 1 Ω enables fast edge control and noise immunity
Pin 2 (Drain)	High-side switch node	Exposed copper pad electrically tied to drain; primary thermal path to PCB heatsink area
Pin 3 (Source)	Reference return	Source connection for gate drive loop; must be routed with minimal inductance to avoid oscillation during switching

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 120 ns, Q_rr = 0.5 µC - reduces switching loss and EMI in hard- and soft-switched bridge legs
High commutation ruggedness	di/dt = 900 A/µs - withstands rapid current reversal without failure in resonant LLC and PFC circuits
Low figure-of-merit (FOM)	R_DS(on) × Q_g = 12.9 Ω·nC - balances conduction and switching losses for optimal efficiency at 100–500 kHz
Industrial-grade qualification	JEDEC J-STD-020 & JESD22 compliant - validated for long-term reliability in 150 °C ambient industrial environments
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets environmental compliance requirements for global OEM production

Applications

Server SMPS

Telecom Rectifier

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converters powering CPU/GPU VRMs.

IC Role / Device Role / Timing Role: High-side ZVS switch operating at 200–350 kHz with precise dead-time control enabled by fast t_rr and low E_oss.

Use Value: Enables >96% full-load efficiency and 20% reduction in heatsink volume versus previous-generation SJ-MOSFETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC input and delivering regulated 54 V output with tight voltage regulation.

Use Value: Supports 94% peak efficiency at 50% load due to low R_DS(on) and reduced switching loss at light loads.

LCD TV Power Supply

Industrial Lighting Driver

Use Scenario: PFC boost switch and main PWM switch in dual-stage 200–300 W open-frame power supplies.

IC Role / Device Role / Timing Role: High-reliability switch sustaining repetitive avalanche energy (E_AS = 484 mJ) during line surges.

Use Value: Eliminates need for external snubbers and improves surge immunity to IEC 61000-4-5 Level 4.

Use Scenario: High-frequency buck-boost LED driver for streetlighting with 300–1000 V AC input.

IC Role / Device Role / Timing Role: Isolated primary switch in flyback or active-clamp forward topology operating at 65–130 kHz.

Use Value: Delivers >92% system efficiency across 10–100% dimming range with stable thermal behavior up to 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R190CFD	TO-247 package, R_thJC = 0.83 °C/W, same electrical specs	Better thermal performance in forced-air-cooled designs; requires through-hole mounting	Select for higher-power (>2 kW) discrete heatsink assemblies where mechanical stability outweighs SMT footprint constraints
IPP65R190CFD	TO-220 package, R_thJC = 0.83 °C/W, identical R_DS(on)/Q_g	Lower cost alternative for lower-power (<1 kW) consumer-grade power supplies with manual assembly	Choose when board-level automation is not required and thermal budget allows higher R_thJA (62 °C/W)

Compared with IPW65R190CFD and IPP65R190CFD, IPB65R190CFDATMA1 offers superior manufacturability in automated SMT lines and optimal thermal interface for compact, high-density server and telecom modules - without sacrificing electrical performance.

Availability

IPB65R190CFDATMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, LCD TV power supplies, and industrial lighting drivers requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IPB65R190CFDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors - with leadership in silicon-based high-voltage power devices since 1999.

The CoolMOS™ CFD2 product line was developed to address efficiency and reliability gaps in resonant and soft-switching topologies, targeting server, telecom, and industrial power conversion systems demanding >95% efficiency and 10+ year field life.

FAQ

What is the maximum recommended gate drive voltage for IPB65R190CFDATMA1?

The absolute maximum gate-source voltage is ±20 V for DC and ±30 V for AC (f > 1 Hz). For reliable operation, drive voltage should be maintained between 10 V and 15 V - sufficient to fully enhance the channel while avoiding gate oxide stress. Gate plateau voltage is 6.4 V, confirming strong Miller immunity at typical 12 V drive levels.

Can IPB65R190CFDATMA1 replace older CoolMOS™ CFD devices in existing designs?

Yes - it is a direct drop-in replacement for CFD1 variants with identical pinout, R_DS(on), and gate charge profile. Key improvements include faster body diode (t_rr reduced by ~30%), higher di/dt rating (900 A/µs vs. 600 A/µs), and enhanced avalanche ruggedness (E_AS = 484 mJ), allowing immediate efficiency gains without layout changes.

What PCB layout considerations are critical for thermal performance?

Maximize copper area (≥6 cm²) connected to the exposed drain pad using multiple thermal vias (≥8×0.3 mm) to inner-layer ground or dedicated thermal planes. Keep gate loop inductance below 5 nH by routing gate and source traces tightly coupled and adjacent to the device. Avoid placing components near the drain pad that impede airflow or heat spreading.

Is IPB65R190CFDATMA1 suitable for unclamped inductive switching (UIS) applications?

Yes - it is fully rated for repetitive unclamped inductive switching with E_AS = 484 mJ (single pulse) and E_AR = 0.70 mJ (repetitive) at I_D = 3.5 A. This makes it appropriate for flyback and forward converters with leakage inductance, provided external snubber energy is within these limits and junction temperature remains below 150 °C.

IPB65R190CFDATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 730µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R190CFDATMA1 FAQ

1.How can I place an order for IPB65R190CFDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R190CFDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R190CFDATMA1 reliable?

The price and inventory of IPB65R190CFDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R190CFDATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R190CFDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R190CFDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R190CFDATMA1?

IPB65R190CFDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R190CFDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R190CFDATMA1?

For technical support, including IPB65R190CFDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R190CFDATMA1 requirements.

6.How does Aetrix verify that IPB65R190CFDATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R190CFDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R190CFDATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R190CFDATMA1?

All IPB65R190CFDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R190CFDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R190CFDATMA1 part is unused and in its original packaging.

Return procedure for IPB65R190CFDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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