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Infineon Technologies IPB65R225C7ATMA2
- Part No.:
- IPB65R225C7ATMA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB65R225C7ATMA2.pdf
- Description:
- MOSFET N-CH 650V 11A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:858
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Product details
Overview
IPB65R225C7ATMA2 from Infineon Technologies is a 650 V, 225 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard-switching and PFC stages. It delivers 41 A pulsed drain current, 20 nC total gate charge, and 2.3 µJ output switching energy at 400 V, enabling compact, high-frequency SMPS in telecom and server power supplies.
For engineers reviewing the IPB65R225C7ATMA2 datasheet, IPB65R225C7ATMA2 pinout, IPB65R225C7ATMA2 application, or IPB65R225C7ATMA2 equivalent, key selection criteria include RDS(on) × Qg figure-of-merit, dv/dt ruggedness (100 V/ns), body diode dI/dt capability (55 A/µs), and industrial-grade JEDEC qualification.
Technical Context
This CoolMOS™ C7 device implements a superjunction structure optimized for reduced conduction and switching losses simultaneously. Its 225 mΩ RDS(on) at 10 V gate drive and low 996 pF input capacitance enable fast, low-loss switching in continuous conduction mode (CCM) PFC and LLC resonant converters.
The MOSFET features a 5.4 V gate plateau voltage and 6 nC gate-to-drain charge (Qgd), supporting stable operation under high dv/dt stress. Its 1.99 °C/W junction-to-case thermal resistance and D²PAK package support high-power density designs with passive or forced-air cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V maximum blocking voltage - supports 400 V AC input PFC and 48 V–54 V telecom rectified bus applications |
| RDS(on), max | 225 mΩ at Tj = 150°C - enables low conduction loss in high-current PFC boost inductors |
| Qg, typ | 20 nC - reduces gate driver power requirement and improves switching efficiency at >100 kHz |
| Eoss@400V | 2.3 µJ - lowers turn-off loss and enables higher frequency operation without excessive temperature rise |
| dI/dt rating | 55 A/µs - ensures robust commutation in synchronous rectification and high-di/dt PFC diode replacement |
| dv/dt ruggedness | 100 V/ns - prevents spurious turn-on in high-noise hard-switching topologies like two-transistor forward |
| Tj max | 150°C - qualified for industrial ambient conditions up to 85°C with derated power dissipation |
Pinout & Package
IPB65R225C7ATMA2 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain tab for thermal enhancement. The drain connects directly to the copper pad on PCB for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring <5.4 V plateau voltage; low 1.2 Ω internal gate resistance simplifies driver design |
| Pin 2 / Tab | Drain | Main high-voltage power path; tab must be soldered to large copper area for thermal management and EMI control |
| Pin 3 | Source | Reference node for gate drive; connects to power ground or source of synchronous FET in half-bridge configurations |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables simultaneous reduction of RDS(on) and Coss, improving FOM RDS(on)×Eoss by >30% vs. prior C6 generation |
| Industrial-grade qualification | Complies with JEDEC J-STD-020 (MSL1) and JESD22-A108 for 150°C operating junction temperature |
| Body diode dI/dt capability | 55 A/µs - allows reliable use in quasi-resonant flyback and active clamp forward converters without external snubbers |
| Pb-free plating & halogen-free mold compound | Meets RoHS Directive 2011/65/EU and IPC-1752A material declaration requirements |
| Low gate charge asymmetry | Qgs/Qgd ratio of ~0.83 - supports predictable Miller-effect timing and stable zero-voltage switching transitions |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Active clamp forward converter in 3 kW telecom rectifier modules with 48 V DC output. IC Role / Device Role / Timing Role: High-side primary switch handling 400 V DC bus, operating at 200 kHz with ZVS-assisted turn-on. Use Value: 225 mΩ RDS(on) and 2.3 µJ Eoss reduce conduction and switching losses, enabling >96% efficiency at full load. |
Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode, driven by dedicated PFC controller. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during line transients, ensuring stable regulation across input range. |
| Solar Inverter | UPS System |
Use Scenario: DC-DC isolation stage in string-level solar microinverter with 600 V DC input. IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology operating at 150 kHz. Use Value: 55 A/µs body diode dI/dt rating supports high-frequency reverse recovery without oscillation or shoot-through risk. |
Use Scenario: High-frequency inverter stage in online double-conversion UPS with 400 V DC link. IC Role / Device Role / Timing Role: Low-loss switching element in H-bridge output stage delivering pure sine wave to critical loads. Use Value: 1.99 °C/W RthJC enables direct heatsink mounting without thermal interface pads, reducing system BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R095C7 | Lower RDS(on) (95 mΩ) but higher Qg (42 nC); same 650 V rating and D²PAK package | Better conduction loss at high DC current; less suitable for >200 kHz due to gate charge penalty | Select when thermal budget is constrained and switching frequency ≤150 kHz |
| STP65N6F7 | 650 V, 65 mΩ, TO-220 package; higher RthJA (62 °C/W), no industrial temp rating | Limited to lower-power (<1 kW) consumer-grade designs; lacks dv/dt ruggedness spec | Choose only for cost-sensitive, non-industrial applications with adequate heatsinking |
Compared with IPW65R095C7 and STP65N6F7, IPB65R225C7ATMA2 offers the best balance of switching speed, thermal performance, and ruggedness for 1–3 kW industrial PFC and isolated DC-DC converters, especially where reliability under transient stress is critical.
Availability
IPB65R225C7ATMA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.
Supply support for IPB65R225C7ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The CoolMOS™ C7 series was engineered specifically for high-efficiency, high-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy infrastructure.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
A 10 Ω gate resistor is specified in the datasheet for dynamic characterization (td(on), tr, etc.) and provides stable turn-on/turn-off behavior with minimal ringing. For hard-switching PFC, values between 5 Ω and 15 Ω are typical; lower values improve switching speed but increase EMI risk and driver stress.
Does IPB65R225C7ATMA2 require a gate driver with negative turn-off capability?
No. The device's 3.5 V typical gate threshold voltage and 5.4 V plateau allow robust operation with standard 0–12 V or 0–15 V gate drivers. Negative turn-off is not required, though it may improve noise immunity in high-dv/dt environments.
Can this MOSFET be paralleled for higher current capacity?
Yes, but requires careful layout: individual gate resistors, ferrite beads on each gate line, and symmetrical PCB routing to ensure current sharing. The datasheet explicitly recommends ferrite beads or separate totem-pole drivers to suppress oscillation during paralleling.
Is the drain tab electrically isolated from other pins?
No. The drain tab is internally connected to Pin 2 and forms the main drain terminal. It must be electrically isolated from the heatsink using an insulating thermal pad or ceramic washer unless the heatsink is at drain potential.
IPB65R225C7ATMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 225mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 996 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 63W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB65R225C7ATMA2 FAQ
1.How can I place an order for IPB65R225C7ATMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB65R225C7ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB65R225C7ATMA2 reliable?
The price and inventory of IPB65R225C7ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R225C7ATMA2 is usually 5 days.
3.What payment methods are accepted for IPB65R225C7ATMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R225C7ATMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB65R225C7ATMA2?
IPB65R225C7ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB65R225C7ATMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB65R225C7ATMA2?
For technical support, including IPB65R225C7ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R225C7ATMA2 requirements.
6.How does Aetrix verify that IPB65R225C7ATMA2 is sourced from the original manufacturer or authorized distributors?
All IPB65R225C7ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R225C7ATMA2 meets industry standards.
7.What is the process for return or replacement of IPB65R225C7ATMA2?
All IPB65R225C7ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R225C7ATMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB65R225C7ATMA2 part is unused and in its original packaging.
Return procedure for IPB65R225C7ATMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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