Infineon Technologies IPB65R280E6ATMA1

Overview

IPB65R280E6 from Infineon Technologies is a 650 V, 0.28 Ω R_DS(on) superjunction MOSFET in PG-TO263 (D²PAK) package, optimized for high-efficiency SMPS in adapters and industrial power supplies. It delivers 45 nC gate charge, 39 A pulsed drain current, and 500 A/µs body diode di/dt capability, enabling compact, cool-running flyback and PFC stages.

For engineers reviewing the IPB65R280E6 datasheet, IPB65R280E6 pinout, IPB65R280E6 application, or IPB65R280E6 equivalent, key selection criteria include R_DS(on)-Q_g figure-of-merit, commutation ruggedness, thermal resistance (R_thJC = 1.2 °C/W), gate drive simplicity, and TO-263 SMD mounting compatibility.

Technical Context

This CoolMOS™ E6 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping to reduce both conduction and switching losses. Its 5.5 V gate plateau voltage and low 24 nC Q_gd enable fast, controllable turn-off with reduced Miller-induced oscillation risk.

The MOSFET features a robust body diode rated for 500 A/µs reverse recovery di/dt and 310 ns t_rr, supporting hard-switched and quasi-resonant topologies without external snubbers in many cases. Thermal design leverages its 1.2 °C/W junction-to-case resistance when mounted on PCBs with ≥6 cm² copper area.

Key Specifications

Pinout & Package

IPB65R280E6 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The package is RoHS-compliant, halogen-free, and qualified per J-STD-20/JESD22.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R280E6 and IPP65R280E6, the IPB65R280E6 offers identical electrical performance in a surface-mount D²PAK package optimized for automated assembly, thermal transfer via PCB copper, and space-constrained adapter designs-making it the preferred choice for volume production of compact, high-efficiency power supplies.

Availability

IPB65R280E6 is available at Aetrix Electronics and suitable for laptop adapters, industrial AC-DC power supplies, and server PSU PFC stages requiring stable component supply, long-term manufacturability, and JEDEC-qualified reliability.

Supply support for IPB65R280E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ E6 product line was engineered to deliver best-in-class R_DS(on) × Q_g figure-of-merit for 600–650 V superjunction MOSFETs targeting high-frequency, high-efficiency SMPS in consumer, computing, and industrial power systems.

FAQ

What is the maximum continuous drain current for IPB65R280E6 at 100 °C case temperature?

The maximum continuous drain current is 8.7 A at T_C = 100 °C, as specified in Table 2 of the Final Data Sheet Rev. 2.0. This rating assumes proper PCB layout with ≥6 cm² copper area for the drain pad and ambient conditions that maintain junction temperature ≤150 °C. Derating is required above this case temperature.

Does IPB65R280E6 require a gate resistor for stable operation?

Yes-a gate resistor (typically 3.3–10 Ω) is recommended to dampen ringing and control dV/dt during switching. The datasheet specifies test conditions using R_G = 3.4 Ω for timing measurements. Lower values increase switching speed but risk overshoot; higher values reduce EMI but raise switching losses.

Can IPB65R280E6 be paralleled with identical units?

Yes, but gate drive must be carefully balanced: use individual ferrite beads (or small gate resistors) on each gate line and ensure symmetrical PCB routing. The datasheet explicitly recommends ferrite beads for paralleling to suppress oscillation caused by mutual inductance and gate loop coupling.

What is the avalanche energy rating for single-pulse operation?

The single-pulse avalanche energy (E_AS) is rated at 290 mJ under test conditions of I_D = 2.4 A, V_DD = 50 V, and T_j = 25 °C. This rating reflects ruggedness during transient overvoltage events such as inductive kickback, but repeated avalanche operation is not recommended for reliability.