Infineon Technologies IPB65R420CFDATMA1

Overview

IPB65R420CFDATMA1 from Infineon Technologies is a 650 V, 0.42 Ω R_DS(on), D²PAK-packaged CoolMOS™ CFD2 superjunction MOSFET optimized for resonant and soft-switching topologies in high-efficiency AC-DC power supplies. It delivers ultra-fast body diode recovery (t_rr = 90 ns, Q_rr = 0.3 µC), low gate charge (Q_g = 31.5 nC), and high commutation ruggedness (di/dt = 900 A/µs), enabling reliable operation in LLC and PFC stages of server PSUs and telecom rectifiers.

For engineers reviewing the IPB65R420CFDATMA1 datasheet, IPB65R420CFDATMA1 pinout, IPB65R420CFDATMA1 application, or IPB65R420CFDATMA1 equivalent, key selection criteria include body diode robustness under hard commutation, E_oss (2.8 µJ @ 400 V), thermal resistance (R_thJC = 1.5 °C/W), and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This MOSFET implements Infineon's second-generation CoolMOS™ CFD technology, featuring a superjunction drift region with integrated field-stop layer and optimized charge compensation for reduced R_DS(on) × Q_g figure-of-merit (FOM). Its body diode is engineered for fast, soft reverse recovery without tail current-critical for zero-voltage switching (ZVS) in resonant converters.

The device operates with a gate threshold voltage (V_GS(th)) of 3.5–4.5 V and exhibits low effective output capacitance (C_oss,eff = 36 pF @ 0–400 V), minimizing turn-off losses during high-frequency switching. Thermal design is supported by a low junction-to-case resistance of 1.5 °C/W in the D²PAK package, enabling high-power density layouts on standard PCBs.

Key Specifications

Pinout & Package

IPB65R420CFDATMA1 is housed in a surface-mount D²PAK (PG-TO263) package with gull-wing leads, optimized for automated assembly and thermal performance on PCBs with copper pour. The package features isolated drain pad for direct thermal coupling to internal ground planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R420CFD and IPD65R420CFDAT, IPB65R420CFDATMA1 offers optimal balance of thermal performance (1.5 °C/W R_thJC), manufacturability (D²PAK gull-wing), and ruggedness-making it the default choice for mid-power (150–500 W) industrial and telecom SMPS where automated assembly and long-term reliability are jointly prioritized.

Availability

IPB65R420CFDATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV power boards, and industrial AC-DC adapters requiring stable component supply across multi-year production cycles.

Supply support for IPB65R420CFDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CFD2 product line, designed specifically for high-efficiency, high-reliability resonant and soft-switching power conversion in industrial, telecom, and computing applications demanding low E_oss, fast body diodes, and extended lifetime.

FAQ

What is the maximum continuous drain current for IPB65R420CFDATMA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at T_C = 100°C, as specified in Table 2 of the datasheet. This limit is thermally derived from the 83.3 W power dissipation rating and 1.5 °C/W junction-to-case thermal resistance, ensuring safe operation without exceeding the 150°C maximum junction temperature.

Does IPB65R420CFDATMA1 require a negative gate turn-off voltage?

No. The device has a gate threshold voltage range of 3.5–4.5 V and is fully compatible with standard 0–12 V or 0–15 V gate drive schemes. A negative turn-off voltage is not required or recommended, as its gate oxide is rated for ±20 V static and ±30 V AC, and the body diode's soft recovery eliminates need for active gate control during commutation.

How does the body diode performance compare to standard silicon MOSFETs?

IPB65R420CFDATMA1's body diode achieves t_rr = 90 ns and Q_rr = 0.3 µC at 100 A/µs di/dt-over 3× faster and with 70% less recovered charge than typical 650 V SJ-MOSFETs. This results in negligible voltage overshoot and no tail current, eliminating snubber circuits in resonant topologies.

Is the D²PAK package lead-free and halogen-free?

Yes. IPB65R420CFDATMA1 uses Pb-free plating and a halogen-free mold compound, compliant with RoHS Directive 2011/65/EU and IEC 61249-2-21. The "AT" suffix in the part number explicitly denotes halogen-free material, distinguishing it from non-halogen-free variants like IPD65R420CFDBT.