Infineon Technologies IPB65R600C6ATMA1

Overview

IPB65R600C6ATMA1 from Infineon Technologies is a 650 V, 7 A, 600 mΩ silicon-based CoolMOS™ C6 superjunction power MOSFET in TO-220FP package, optimized for hard-switched and resonant SMPS topologies including LLC and PFC stages. It delivers low conduction and switching losses with R_DS(on) = 600 mΩ at V_GS = 10 V, Q_g = 14 nC, and E_oss = 19 nJ, enabling high-efficiency 100–300 W server/industrial power supplies.

For engineers reviewing the IPB65R600C6ATMA1 datasheet, IPB65R600C6ATMA1 pinout, IPB65R600C6ATMA1 application, or IPB65R600C6ATMA1 equivalent, key selection criteria include its 650 V V_DSS, 7 A I_D continuous rating, fast turn-on/off times (t_on = 18 ns, t_off = 22 ns), low gate charge, and rugged avalanche capability - all critical for high-frequency, high-reliability AC-DC conversion designs.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ C6 technology, featuring optimized charge balance and reduced specific on-resistance (R_DS(on) × A) versus prior generations. Its gate threshold voltage (V_GS(th)) of 3.0–4.5 V enables robust drive compatibility with standard 10 V gate drivers while maintaining low Miller capacitance (C_rss = 7 pF) for stable high-speed switching.

The MOSFET supports both hard-switching and soft-switching operation modes, with specified E_as = 115 mJ (single-pulse avalanche energy) and guaranteed unclamped inductive switching (UIS) performance. Its thermal resistance R_thJC = 1.3 K/W ensures effective junction-to-case heat transfer in TO-220FP mounting configurations.

Key Specifications

Pinout & Package

IPB65R600C6ATMA1 uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, enabling direct heatsink attachment without insulating hardware. The drain is connected to the metal tab; source and gate are leaded terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP65N6F6 and IXFH60N60X3, IPB65R600C6ATMA1 offers superior high-frequency efficiency due to its lower Q_g, E_oss, and C_rss, making it optimal for compact, resonant, or high-density power supplies where thermal isolation and driver simplicity are design priorities.

Availability

IPB65R600C6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial SMPS, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing under strict quality protocols.

Supply support for IPB65R600C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and sensor solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The CoolMOS™ C6 series was developed to extend silicon-based high-voltage MOSFET performance into resonant and high-frequency hard-switched applications, targeting efficiency, reliability, and ease of use in next-generation AC-DC and DC-DC converters.

FAQ

Is IPB65R600C6ATMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low C_oss (23 pF), low C_rss/C_iss ratio (7 pF / 420 pF), and fast t_off (22 ns) are specifically optimized for ZVS operation in LLC resonant converters. These parameters ensure minimal dead-time loss and reliable turn-on under resonant conditions at 100–300 kHz.

What is the maximum allowable case temperature during continuous operation?

The maximum continuous case temperature is 100 °C, derived from the device's rated T_j(max) = 150 °C and R_thJC = 1.3 K/W. At 7 A I_D and 600 mΩ R_DS(on), power dissipation is ~29.4 W; with 1.3 K/W thermal resistance, ΔT = 38.2 K, allowing safe operation up to 111.8 °C case temperature - but 100 °C is recommended for margin.

Does IPB65R600C6ATMA1 require a negative gate turn-off voltage?

No. The device has a gate threshold voltage range of 3.0–4.5 V and is fully enhanced at V_GS = 10 V. While negative turn-off (e.g., –5 V) improves noise immunity, it is not required - standard 0 V to 10 V gate drive suffices for stable operation in well-layouted circuits with proper gate loop inductance control.

Can IPB65R600C6ATMA1 replace older CoolMOS™ C3 or C5 devices in existing designs?

Yes, with minor layout review. It shares identical TO-220FP pinout and voltage/current ratings, but exhibits lower Q_g and E_oss. Gate resistor values may need reduction (by ~20%) to maintain similar switching speed, and snubber tuning may be required due to faster edge rates and lower C_oss.