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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB70N04S3-07

Name: IPB70N04S3-07
Brand: Infineon Technologies
SKU: IPB70N04S3-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70N04S3-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70N04S3-07.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB70N04S3-07 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO263-3 (D²PAK) package, rated for 40 V V_DS, 80 A I_D (T_C = 25°C), and 3.7 mΩ R_DS(on) max at V_GS = 10 V. It delivers high-current switching in DC-DC converters, motor drives, and automotive body control modules.

For engineers reviewing the IPB70N04S3-07 datasheet, IPB70N04S3-07 pinout, IPB70N04S3-07 application, or IPB70N04S3-07 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (R_thJC = 1.3 K/W), avalanche ruggedness (E_AS = 510 mJ), and AEC-Q101 qualification status.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, optimized for low conduction and switching losses in high-frequency synchronous rectification and PWM-controlled loads. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with 3.3 V and 5 V logic-level drivers.

The device features 100% UIS-tested avalanche capability and integrated ESD protection (HBM Class 2). Its SOA is specified up to T_C = 100°C with pulse width ≤ 10 ms, supporting robust transient handling in automotive load-dump conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V automotive systems with load dump margin.
R_DS(on) max	3.7 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 80 A continuous current (T_C = 25°C).
I_D (cont)	80 A @ T_C = 25°C - Supports high-current motor phase switches and battery disconnect circuits.
E_AS	510 mJ - Confirmed single-pulse avalanche energy rating ensures reliability under inductive turn-off stress.
R_thJC	1.3 K/W - Low junction-to-case thermal resistance enables efficient heatsinking in compact TO263-3 layouts.
Q_g	92 nC @ V_GS = 10 V - Gate charge value directly determines driver sizing and switching loss in 100–500 kHz SMPS designs.

Pinout & Package

Package: TO263-3 (D²PAK), surface-mount, copper-exposed drain pad for enhanced thermal dissipation. Standard JEDEC MO-211AC outline with 2.54 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connected to PCB ground plane for minimal loop inductance in high-di/dt switching.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 Ω series resistor to suppress ringing during fast edge transitions.
Pin 3 (Drain)	Power output / high-current path	Internally bonded to large copper tab; must be soldered to thermal pad for R_thJC compliance and current derating control.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, lighting, and ADAS power stages.
100% UIS tested	Each unit undergoes single-pulse avalanche stress test to guarantee E_AS performance across production lots.
Optimized gate charge	Q_g = 92 nC and Q_gd/Q_g = 0.27 enable fast, low-loss switching with standard gate drivers (e.g., 1EDN7512B).
Low R_DS(on) × Q_g figure of merit	341 mΩ·nC - Balances conduction and switching loss for high-efficiency 48 V/12 V DC-DC converters.

Applications

Automotive Body Control Module

48 V–12 V Bidirectional DC-DC Converter

Use Scenario: Controlling headlight, wiper, and seat actuator loads via high-side or low-side switching.

IC Role / Device Role / Timing Role: Power switch in protected load-driver ICs or discrete high-current relay replacement.

Use Value: 80 A rating and AEC-Q101 qualification support ASIL-B functional safety requirements without external current sensing.

Use Scenario: Synchronous rectification in buck-boost topology converting 48 V mild-hybrid bus to 12 V legacy subsystems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200–300 kHz with 10 V gate drive.

Use Value: 3.7 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 5 mΩ devices at 60 A load current.

Industrial Motor Starter

Server PSU OR-ing Circuit

Use Scenario: Soft-start and overcurrent-protected 3-phase inverter half-bridge leg for 0.5–2 kW BLDC motors.

IC Role / Device Role / Timing Role: High-current phase-leg switch with integrated avalanche energy handling for back-EMF clamping.

Use Value: 510 mJ E_AS withstands repetitive inductive kickback during stall or rapid deceleration events.

Use Scenario: Redundant 12 V power supply OR-ing in enterprise servers and telecom rectifiers.

IC Role / Device Role / Timing Role: Low-R_DS(on) forward path switch with fast turn-on/turn-off for seamless source switchover.

Use Value: R_DS(on) drift <±5% over 1000 h HTOL testing ensures long-term current-sharing stability across parallel units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N4LF6AG	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 105 nC; no AEC-Q101 certification.	Targeted at industrial UPS and solar inverters; not validated for automotive temperature cycling or humidity testing.	Select when highest R_DS(on) priority outweighs automotive qualification needs.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 4.0 mΩ @ 10 V; R_thJC = 1.5 K/W; AEC-Q101 qualified but lower I_D (70 A).	Preferred for space-constrained designs using smaller DFN5x6 packages; limited to 70 A continuous due to thermal limits.	Choose for footprint reduction where peak current stays below 70 A and board area is critical.

Compared with STL110N4LF6AG and NTMFS4C09NT1G, IPB70N04S3-07 uniquely balances AEC-Q101 compliance, 80 A current capability, and 3.7 mΩ R_DS(on) in TO263-3-making it optimal for thermally demanding automotive power distribution nodes requiring field-proven reliability.

Availability

IPB70N04S3-07 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server power OR-ing, and 48 V–12 V DC-DC converter designs requiring stable component supply and long-lifecycle support.

Supply support for IPB70N04S3-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and wafer fabrication facilities.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-reliability power switching in automotive and industrial applications where thermal robustness and avalanche performance are critical.

FAQ

Is IPB70N04S3-07 suitable for 12 V automotive battery disconnect applications?

Yes. With 40 V V_DS, 80 A continuous rating, AEC-Q101 qualification, and 510 mJ E_AS, it supports ISO 7637-2 pulse 5a/b load-dump protection in battery main-switch configurations. Thermal design must maintain T_C ≤ 100°C per SOA curves.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±20 V, but operation at 10 V is recommended for full R_DS(on) specification and optimal switching efficiency. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk.

Does IPB70N04S3-07 require a gate resistor for stability?

Yes. A 10–47 Ω series gate resistor is required to dampen parasitic oscillation caused by gate-drain capacitance and PCB trace inductance. Layout-dependent values should be verified with oscilloscope measurements of V_GS ringing during switching transitions.

Can this MOSFET replace older OptiMOS™ 2 devices in existing designs?

Yes, with verification. IPB70N04S3-07 offers lower R_DS(on) and improved Q_g vs. IPB70N04S2-07, but identical pinout and package. Layout changes are unnecessary, though gate driver strength and thermal margin should be rechecked due to higher peak currents.

IPB70N04S3-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70N04S3-07 FAQ

1.How can I place an order for IPB70N04S3-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70N04S3-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70N04S3-07 reliable?

The price and inventory of IPB70N04S3-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N04S3-07 is usually 5 days.

3.What payment methods are accepted for IPB70N04S3-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N04S3-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70N04S3-07?

IPB70N04S3-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70N04S3-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70N04S3-07?

For technical support, including IPB70N04S3-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N04S3-07 requirements.

6.How does Aetrix verify that IPB70N04S3-07 is sourced from the original manufacturer or authorized distributors?

All IPB70N04S3-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N04S3-07 meets industry standards.

7.What is the process for return or replacement of IPB70N04S3-07?

All IPB70N04S3-07 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N04S3-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70N04S3-07 part is unused and in its original packaging.

Return procedure for IPB70N04S3-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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