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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB70N10S312ATMA2

Name: IPB70N10S312ATMA2
Brand: Infineon Technologies
SKU: IPB70N10S312ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70N10S312ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70N10S312ATMA2.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IPB70N10S312ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 9.4–11.3 mΩ R_DS(on) (typ./max.) at V_GS = 10 V. It delivers 410 mJ single-pulse avalanche energy and operates up to 175 °C junction temperature, targeting high-reliability DC-DC converters and motor control stages in EV traction inverters and 48 V mild-hybrid systems.

For engineers reviewing the IPB70N10S312ATMA2 datasheet, IPB70N10S312ATMA2 pinout, IPB70N10S312ATMA2 application, or IPB70N10S312ATMA2 equivalent, key selection criteria include its AEC-Q101 qualification, 1.2 K/W R_thJC, 100% avalanche-tested ruggedness, low gate charge (Q_g = 51–66 nC), and SMD-optimized thermal performance on 6 cm² PCB copper area.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching dynamics. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, and the integrated body diode supports synchronous rectification with t_rr ≤ 100 ns and Q_rr = 265 nC under defined conditions.

The MOSFET's safe operating area (SOA) is characterized for single-pulse operation up to 200 V and 70 A, with transient thermal impedance Z_thJC validated down to 1 µs pulse width. Its MSL1 rating supports lead-free reflow up to 260 °C, meeting automotive manufacturing requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V–80 V bus applications with margin against transients
R_DS(on) max	11.3 mΩ @ V_GS = 10 V, I_D = 70 A, T_j = 25 °C - Enables <1 W conduction loss at full load in compact SMD layout
I_D cont	70 A @ T_C = 25 °C - Supports high-current motor phase legs and battery disconnect switches
E_AS	410 mJ - Confirmed single-pulse avalanche capability without failure, critical for inductive load switching
Q_g	51–66 nC - Low total gate charge reduces driver power demand and switching losses in 20–100 kHz PWM
R_thJC	1.2 K/W - Enables efficient heat transfer to heatsink or PCB copper, supporting >100 W power dissipation
t_r/t_f	8 ns / 8 ns - Fast edge rates support high-frequency operation while minimizing overlap loss

Pinout & Package

IPB70N10S312ATMA2 is housed in a PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level signal; requires <66 nC charge to fully enhance channel
Pin 2 (Drain)	High-side switch node	Exposed copper tab - electrically and thermally connected to drain; must be soldered to large PCB copper pour
Pin 3 (Source)	Power return reference	Provides low-impedance path to ground or low-side switch; defines gate-source voltage reference

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit undergoes single-pulse E_AS stress at 410 mJ, ensuring field reliability under inductive fault conditions
175 °C maximum T_j	Enables operation in engine bay or near-power electronics without derating in high-ambient environments
MSL1 reflow rating	Withstands peak solder temperatures up to 260 °C, compatible with standard lead-free assembly processes
Low Q_gd/Q_gs ratio	Q_gd = 12–19 nC vs. Q_gs = 17–23 nC - improves Miller immunity and hard-switching stability

Applications

Automotive Traction Inverter Half-Bridge

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-efficiency bidirectional power conversion between 48 V battery and 12 V auxiliary rail in start-stop and regenerative braking systems.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous buck topology, switching at 50–100 kHz with precise dead-time control.

Use Value: 9.4 mΩ R_DS(on) minimizes conduction loss at 70 A peak, while 410 mJ E_AS withstands inductive kickback during fault shutdown.

Use Scenario: Power switching stage in 3 kW bi-directional DC-DC converter for vehicle electrification architectures.

IC Role / Device Role / Timing Role: High-current, high-voltage switch in interleaved phase-leg configuration, driven by isolated gate driver.

Use Value: 1.2 K/W R_thJC enables direct thermal coupling to heatsink, sustaining 70 A continuous current without forced air cooling.

EV Onboard Charger (OBC) PFC Stage

Industrial Motor Drive Output Stage

Use Scenario: Boost switch in active PFC front-end of 6.6 kW OBC, operating at 65–100 kHz with high line-voltage swing.

IC Role / Device Role / Timing Role: Fast-switching, high-V_DS MOSFET handling 100 V blocking and 70 A average current in continuous conduction mode.

Use Value: Low C_oss (940–1222 pF) and Crss (105–158 pF) reduce capacitive turn-off loss and improve efficiency above 65 kHz.

Use Scenario: Phase-leg switch in 5–10 kW servo drive for robotics and CNC equipment, requiring high short-circuit ruggedness.

IC Role / Device Role / Timing Role: Main power switch in 3-phase inverter output stage, controlled via PWM with hardware overcurrent protection.

Use Value: AEC-Q101 qualification ensures long-term reliability under vibration, thermal cycling, and repetitive short-circuit stress up to 10 µs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70N10S3-12	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded); no exposed drain pad	Suitable for prototyping or lower-volume industrial designs where manual assembly or heatsink mounting is preferred	Select when board space allows through-hole mounting and thermal management uses discrete heatsink rather than PCB copper
IPI70N10S3-12	Same die, TO-262-3-1 (I²PAK) package; R_thJC = 1.2 K/W identical, but leads limit SMD reflow compatibility	Used in legacy automotive modules requiring leaded SMT footprint with partial wave-solder compatibility	Choose only if existing production line requires I²PAK form factor and cannot accommodate D²PAK stencil design

Compared with IPP70N10S3-12 and IPI70N10S3-12, IPB70N10S312ATMA2 offers superior PCB thermal integration via its D²PAK drain pad, enabling higher power density in space-constrained automotive modules without sacrificing avalanche ruggedness or gate drive simplicity.

Availability

IPB70N10S312ATMA2 is available at Aetrix Electronics and suitable for automotive traction inverters, 48 V mild-hybrid DC-DC converters, and onboard charger PFC stages requiring stable component supply, AEC-Q101 compliance, and long-lifecycle availability.

Supply support for IPB70N10S312ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T family-designed specifically for high-efficiency, high-reliability automotive power conversion, emphasizing low R_DS(on), robust avalanche behavior, and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPB70N10S312ATMA2?

The absolute maximum V_GS is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be clamped to +10 V to +15 V for enhancement and –5 V to 0 V for turn-off, avoiding prolonged exposure near the ±20 V limits.

Does IPB70N10S312ATMA2 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 70 A switching at 50–100 kHz, a 3.5 Ω resistor is used in Infineon's reference characterization (per datasheet page 3). Actual value depends on driver strength and layout; typical range is 2.2–10 Ω. Lower values increase switching speed but raise EMI risk; higher values reduce ringing at the cost of increased switching loss.

Can IPB70N10S312ATMA2 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see page 5, Fig. 6) enables inherent current sharing across paralleled devices. To ensure balanced operation, use matched gate drive paths, symmetrical PCB layout, and identical thermal mounting. Derate total current by 15% versus sum of individual ratings to account for dynamic imbalance and thermal gradients.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the integrated body diode has t_rr ≤ 100 ns and Q_rr = 265 nC at T_j = 25 °C, making it viable for synchronous rectification up to ~100 kHz. However, for optimal efficiency, external Schottky or SiC diodes are preferred above 50 kHz due to lower forward voltage and negligible reverse recovery charge.

IPB70N10S312ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.6mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4355 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70N10S312ATMA2 FAQ

1.How can I place an order for IPB70N10S312ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70N10S312ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70N10S312ATMA2 reliable?

The price and inventory of IPB70N10S312ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N10S312ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB70N10S312ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N10S312ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70N10S312ATMA2?

IPB70N10S312ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70N10S312ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70N10S312ATMA2?

For technical support, including IPB70N10S312ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N10S312ATMA2 requirements.

6.How does Aetrix verify that IPB70N10S312ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB70N10S312ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N10S312ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB70N10S312ATMA2?

All IPB70N10S312ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N10S312ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70N10S312ATMA2 part is unused and in its original packaging.

Return procedure for IPB70N10S312ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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