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Infineon Technologies IPB70N10S3L12ATMA2

Name: IPB70N10S3L12ATMA2
Brand: Infineon Technologies
SKU: IPB70N10S3L12ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70N10S3L12ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70N10S3L12ATMA2.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IPB70N10S3L12ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 12.1 mΩ max R_DS(on) at V_GS = 10 V and I_D = 70 A, and qualified to AEC-Q101. It delivers high-current switching in engine control units and DC-DC converters with 175 °C maximum junction temperature.

For engineers reviewing the IPB70N10S3L12ATMA2 datasheet, IPB70N10S3L12ATMA2 pinout, IPB70N10S3L12ATMA2 application, or IPB70N10S3L12ATMA2 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (410 mJ), thermal resistance (R_thJC = 1.5 K/W), and AEC-Q101 qualification status for under-hood power electronics.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V–48 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables robust 3.3 V/5 V logic-level drive compatibility while maintaining low leakage (I_DSS ≤ 1 µA at 125 °C).

The integrated body diode features fast reverse recovery (t_rr = 80 ns, Q_rr = 185 nC) and low forward voltage (V_SD = 0.6–1.2 V at 70 A), supporting synchronous rectification and freewheeling in high-frequency buck converters and motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V battery systems with 2× safety margin against transients
R_DS(on) max @ V_GS=10 V	12.1 mΩ - enables <1.2 W conduction loss at 70 A continuous drain current
I_D continuous @ T_C=100 °C	48 A - defines usable current in thermally constrained engine bay PCB layouts
E_AS single pulse	410 mJ - withstands inductive load turn-off energy without failure in solenoid drivers
R_thJC	1.5 K/W - allows direct heatsink mounting for >100 W power dissipation capability
Q_g total	60–80 nC - determines gate driver strength requirement for <100 ns switching transitions
t_r/t_f	5 ns / 5 ns - supports >1 MHz PWM operation in compact DC-DC modules

Pinout & Package

IPB70N10S3L12ATMA2 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal performance. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level voltage to modulate channel conductivity; requires <80 nC charge for full turn-on
Pin 2 (Drain)	High-side power node	Exposed copper tab - must be soldered to large PCB copper area (≥6 cm²) for thermal management
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate drive; connects to low-inductance source trace

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use up to 175 °C junction temperature
100% avalanche tested	Each unit passes single-pulse E_AS stress test to 410 mJ, ensuring ruggedness in inductive switching
Low R_DS(on) at 4.5 V	15.5 mΩ max - enables direct drive from microcontroller GPIO without level-shifting
MSL1 reflow rating	Compatible with standard 260 °C lead-free reflow profiles without moisture sensitivity concerns
Optimized body diode	Q_rr = 185 nC and t_rr = 80 ns - reduces switching loss and EMI in hard-switched topologies

Applications

Engine Control Unit (ECU)

Automotive DC-DC Converter

Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12 V/48 V inductive loads with precise 1–10 ms on-time pulses.

Use Value: 410 mJ avalanche rating absorbs back-EMF without snubber, reducing BOM count and board space.

Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switch operating at 250–500 kHz with zero-voltage switching assistance.

Use Value: 12.1 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 20 mΩ devices, improving efficiency above 95%.

Electric Power Steering (EPS)

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: H-bridge phase-leg switch in 3-phase EPS motor inverter driving 1–3 kW brushless motors.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling 70 A peak phase current with <5 ns rise/fall times.

Use Value: 1.5 K/W R_thJC enables direct heatsink attachment, sustaining 175 °C junction temp during torque peaks.

Use Scenario: Primary-side switch in auxiliary flyback converter powering OBC control circuitry from high-voltage battery.

IC Role / Device Role / Timing Role: 100 V-rated switch handling 80 V transients during HV bus switching events.

Use Value: V_(Br)DSS = 100 V with 20% margin over 48 V system + 40 V transient ensures long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70N10S3L-12	Same die, TO-220-3-1 package; R_thJA = 62 K/W (no PCB copper area benefit)	Better suited for prototyping or low-volume through-hole assembly; lacks D²PAK thermal interface	Select when manual soldering or heatsink clamping is preferred over SMT reflow
STL110N10F7	100 V, 11 mΩ typical R_DS(on), but only industrial grade (not AEC-Q101 qualified)	Acceptable for non-automotive industrial motor drives; not certified for automotive safety-critical systems	Choose only for cost-sensitive non-automotive designs where qualification is not required

Compared with IPP70N10S3L-12 and STL110N10F7, IPB70N10S3L12ATMA2 uniquely combines AEC-Q101 qualification, D²PAK thermal performance (R_thJC = 1.5 K/W), and 4.5 V logic-level drive in a production-ready SMT package-making it optimal for volume automotive power stages requiring zero derating at 175 °C.

Availability

IPB70N10S3L12ATMA2 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB70N10S3L12ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability automotive power conversion where thermal robustness, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

Is IPB70N10S3L12ATMA2 pin-compatible with IPI70N10S3L-12?

No. IPB70N10S3L12ATMA2 uses PG-TO263-3-2 (D²PAK) packaging, while IPI70N10S3L-12 uses PG-TO262-3-1 (I²PAK). Though electrically identical, their footprints, thermal pads, and mechanical mounting differ - requiring separate PCB layouts and assembly processes.

What is the maximum recommended gate resistor for 500 kHz switching?

For 500 kHz operation with minimal overshoot, a 3.5 Ω gate resistor is validated per Infineon's reference design (V_DD = 80 V, I_D = 70 A). This value balances switching speed (t_r/t_f ≈ 5 ns) and gate ringing suppression without exceeding Q_g-driven current limits.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to 10 V gate drive. Its V_GS(th) range (1.2–2.4 V) and low I_GSS (<100 nA) ensure clean turn-off at 0 V without risk of unintended conduction, even at 175 °C junction temperature.

Can IPB70N10S3L12ATMA2 replace IPP70N10S3L-12 in existing TO-220 designs?

Not directly. While electrically identical, the D²PAK package requires redesign of PCB layout, thermal vias, and assembly process. Mechanical adaptation kits or adapter boards are not recommended due to thermal impedance mismatch - dedicated D²PAK layout is required to leverage its 1.5 K/W R_thJC.

IPB70N10S3L12ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70N10S3L12ATMA2 FAQ

1.How can I place an order for IPB70N10S3L12ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70N10S3L12ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70N10S3L12ATMA2 reliable?

The price and inventory of IPB70N10S3L12ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N10S3L12ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB70N10S3L12ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N10S3L12ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70N10S3L12ATMA2?

IPB70N10S3L12ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70N10S3L12ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70N10S3L12ATMA2?

For technical support, including IPB70N10S3L12ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N10S3L12ATMA2 requirements.

6.How does Aetrix verify that IPB70N10S3L12ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB70N10S3L12ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N10S3L12ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB70N10S3L12ATMA2?

All IPB70N10S3L12ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N10S3L12ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70N10S3L12ATMA2 part is unused and in its original packaging.

Return procedure for IPB70N10S3L12ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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