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Infineon Technologies IPB70N10SL16ATMA1
- Part No.:
- IPB70N10SL16ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB70N10SL16ATMA1.pdf
- Description:
- MOSFET N-CH 100V 70A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,652
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Product details
Overview
IPB70N10SL16ATMA1 from Infineon Technologies is an N-channel logic-level SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V VDS, 70 A continuous drain current at TC = 25 °C, and 16 mΩ RDS(on) at VGS = 10 V. It supports avalanche-rated operation up to 700 mJ and operates reliably from –55 °C to +175 °C, making it suitable for high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the IPB70N10SL16ATMA1 datasheet, IPB70N10SL16ATMA1 pinout, IPB70N10SL16ATMA1 application, or IPB70N10SL16ATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, low 10–16 mΩ on-resistance at 10 V, 250 W power dissipation capability, and robust dv/dt rating of 6 kV/µs - critical for hard-switched industrial inverters and automotive body control modules.
Technical Context
This device implements a planar silicon-based enhancement-mode MOSFET architecture optimized for high-current, medium-voltage switching. Its gate threshold voltage (1.2–2.0 V) enables direct microcontroller GPIO drive, while its 3630 pF input capacitance and 160–240 nC total gate charge define switching speed constraints under 1.3 Ω gate resistance.
The integrated body diode exhibits 1.2–1.8 V forward voltage at 140 A and 100–150 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and H-bridge topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 100 V - supports 48 V bus systems with 2× safety margin against transients |
| RDS(on) @ VGS=10 V | 10–16 mΩ - enables ≤1.12 W conduction loss at 70 A ID |
| ID Continuous | 70 A @ TC=25°C - requires ≥6 cm² copper area on FR4 PCB for thermal management |
| EAS | 700 mJ - withstands single-pulse inductive energy without failure in motor phase-legs |
| dv/dt Rating | 6 kV/µs - suppresses false turn-on in high-noise inverter environments |
| Tj Max | +175°C - qualified for under-hood automotive and industrial ambient conditions |
| Qg Total | 160–240 nC - determines gate driver peak current requirement (~180 mA avg. for 1.3 Ω RG) |
Pinout & Package
IPB70N10SL16ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal conduction. The case is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 0–20 V logic-level signals; 10 nA leakage at 20 V ensures low standby power |
| 2 (Drain) | High-side current path | Connected to exposed copper pad; carries full load current and dissipates heat into PCB |
| 3 (Source) | Reference node | Common return for gate drive and load current; defines local ground reference for driver IC |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for level-shifting in 3.3 V/5 V MCU systems |
| Avalanche ruggedness | Rated for repetitive 700 mJ single-pulse energy - enables reliable operation in unclamped inductive switching |
| High-temperature operation | Specified up to +175°C junction temperature - supports placement near heat sources in compact enclosures |
| Low gate charge | Qgd = 34–51 nC - reduces Miller-induced switching losses during commutation |
| Green package | Lead-free, RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) |
Applications
| Motor Drive Half-Bridge | 48 V DC-DC Converter |
|---|---|
Use Scenario: High-current bidirectional motor control in automotive HVAC blower and power seat modules. IC Role / Device Role / Timing Role: Low-side switch in synchronous H-bridge configuration with fast 95–145 ns fall time. Use Value: 16 mΩ RDS(on) limits I²R loss to <1.2 W at 70 A, reducing heatsink size by 35% vs. 25 mΩ alternatives. | Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V buck converter for telecom power supplies. IC Role / Device Role / Timing Role: High-efficiency power switch with 100–150 ns trr enabling >95% efficiency at 200 kHz. Use Value: Integrated body diode eliminates discrete Schottky, saving 3.2 mm² PCB area per phase. |
| Industrial Inverter Output Stage | Automotive Body Control Module |
Use Scenario: Phase-leg switching in 3-phase 400 V AC drives for pump and fan control. IC Role / Device Role / Timing Role: Hard-switched power transistor with 6 kV/µs dv/dt immunity preventing spurious turn-on. Use Value: 700 mJ EAS rating allows safe operation without snubbers in 1 kW inverters. | Use Scenario: Load switching for headlights, fog lamps, and heated mirrors in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: Logic-compatible high-side or low-side switch controlled directly by CAN/LIN microcontrollers. Use Value: 1.2–2.0 V VGS(th) ensures stable turn-on across battery voltage range (9–16 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP70NF10 | RDS(on) = 18 mΩ @ 10 V; Qg = 220 nC; TO-220 package | Higher thermal resistance (RthJC = 0.9 K/W) limits power density in SMT designs | Prefer when through-hole mounting and lower gate charge variation are prioritized over footprint size |
| IRFB7545PBF | RDS(on) = 12.5 mΩ @ 10 V; Qg = 150 nC; D²PAK package | Lower RDS(on) but reduced EAS (420 mJ) and no official 175°C rating | Choose only if conduction loss dominates design and avalanche stress is minimal |
Compared with STP70NF10 and IRFB7545PBF, IPB70N10SL16ATMA1 uniquely balances low RDS(on), high-temperature capability, and proven avalanche ruggedness in a surface-mount package - essential for space-constrained, thermally aggressive automotive and industrial power stages.
Availability
IPB70N10SL16ATMA1 is available at Aetrix Electronics and suitable for motor drive half-bridges, 48 V DC-DC converters, and industrial inverter output stages requiring stable component supply and long-term lifecycle support.
Supply support for IPB70N10SL16ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.
This device belongs to the SIPMOS™ logic-level power MOSFET product line, engineered for high-current, high-reliability switching in automotive body electronics and industrial motor controls where gate drive simplicity and thermal resilience are critical.
FAQ
What is the maximum allowable gate-source voltage for IPB70N10SL16ATMA1?
The absolute maximum VGS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in high-dv/dt environments like motor drives.
Can IPB70N10SL16ATMA1 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (increasing ~0.5%/°C) enables inherent current sharing. Parallel operation requires matched layout (symmetrical trace lengths, shared source inductance minimization), identical gate resistors (≤1.5 Ω), and thermal coupling via common heatsink or copper pour to ensure uniform Tj across devices.
Is the body diode suitable for continuous freewheeling in synchronous rectification?
Yes - the integrated body diode is rated for 70 A continuous forward current at TC = 25 °C and exhibits 1.2–1.8 V VSD at 140 A. For sustained freewheeling, ensure junction temperature remains below 150 °C using adequate PCB copper area and airflow, as diode conduction losses scale linearly with forward current.
Does IPB70N10SL16ATMA1 meet AEC-Q101 qualification requirements?
No - while rated for operation up to +175 °C and used in automotive applications, this specific variant (IPB70N10SL16ATMA1) is not AEC-Q101 qualified. For automotive-grade deployment, specify the AEC-Q101 qualified version IPB70N10SL16AKSA1, which undergoes additional stress testing including HTGB, HTRB, and temperature cycling.
IPB70N10SL16ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs:
- 240 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4540 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IPB70N10SL16ATMA1 FAQ
1.How can I place an order for IPB70N10SL16ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB70N10SL16ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB70N10SL16ATMA1 reliable?
The price and inventory of IPB70N10SL16ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N10SL16ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB70N10SL16ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N10SL16ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB70N10SL16ATMA1?
IPB70N10SL16ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB70N10SL16ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB70N10SL16ATMA1?
For technical support, including IPB70N10SL16ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N10SL16ATMA1 requirements.
6.How does Aetrix verify that IPB70N10SL16ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB70N10SL16ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N10SL16ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB70N10SL16ATMA1?
All IPB70N10SL16ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N10SL16ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB70N10SL16ATMA1 part is unused and in its original packaging.
Return procedure for IPB70N10SL16ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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