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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB70N12S311ATMA1

Name: IPB70N12S311ATMA1
Brand: Infineon Technologies
SKU: IPB70N12S311ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70N12S311ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70N12S311ATMA1.pdf

Description:: MOSFET N-CHANNEL_100+

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Product details

Overview

IPB70N12S311ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 120 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 11.3 mΩ max R_DS(on) (SMD version), designed for high-efficiency automotive power switching in engine control units and DC-DC converters.

For engineers reviewing the IPB70N12S311ATMA1 datasheet, IPB70N12S311ATMA1 pinout, IPB70N12S311ATMA1 application, or IPB70N12S311ATMA1 equivalent, key selection criteria include avalanche ruggedness (410 mJ single-pulse), 175 °C maximum junction temperature, gate plateau voltage of 5.5 V, and thermal resistance R_thJC = 1.2 K/W - all critical for under-hood automotive reliability.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining robust avalanche capability. Its 5.5 V gate plateau voltage enables stable turn-on under noisy automotive supply conditions, and its 100% avalanche-tested construction ensures survivability during inductive load switching transients.

The MOSFET features a co-packaged body diode with 70 A continuous forward current rating, 1.2 V max V_SD at 70 A and 25 °C, and 100 ns typical reverse recovery time - enabling efficient synchronous rectification and freewheeling in high-frequency buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V automotive systems with 2.5× safety margin against load-dump transients
R_DS(on) max	11.3 mΩ (SMD) - enables ≤1.2 W conduction loss at 70 A, reducing heatsink requirements
I_D continuous	70 A @ T_C = 25 °C - delivers high power density in compact TO263-3 footprint
E_AS	410 mJ - withstands repetitive inductive energy spikes without failure in motor drive applications
R_thJC	1.2 K/W - allows direct thermal coupling to PCB copper pour or heatsink for precise junction temperature control
Q_g total	65 nC max - determines gate driver strength requirement for <25 ns turn-off delay in 100 kHz+ switching
t_r/t_f	8 ns each - supports fast, low-loss switching with minimal overlap loss in hard-switched converters

Pinout & Package

IPB70N12S311ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers via level-shifting
Pin 2 (Drain)	Main power output terminal	Exposed copper pad - must be soldered to ≥6 cm² PCB copper area for thermal performance per datasheet layout guidelines
Pin 3 (Source)	Power return path	Provides low-inductance source connection; ties to local ground plane to minimize switching noise coupling

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use up to 175 °C junction temperature and 1000+ thermal cycles
100% avalanche tested	Each unit passes single-pulse E_AS = 410 mJ test - eliminates field failures due to unclamped inductive switching
Low R_DS(on) × Q_g	9.4 mΩ typ / 51 nC min - achieves high efficiency in 100–500 kHz DC-DC stages without compromising switching speed
MSL1 reflow rating	Compatible with standard 260 °C peak lead-free reflow profiles - simplifies SMT manufacturing integration
Integrated body diode	V_SD = 1.2 V max at 70 A - reduces need for external freewheeling diodes in H-bridge motor drivers

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Automotive DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with 12 V battery supply and transient spikes up to 60 V.

IC Role / Device Role / Timing Role: Main power switch controlling injector coil current; operates in pulsed mode with 1–5 ms on-time and 10–20 kHz PWM modulation.

Use Value: 11.3 mΩ R_DS(on) limits I²R loss to <5.6 W at 70 A peak, while 410 mJ avalanche rating absorbs back-EMF without snubber circuits.

Use Scenario: Primary-side switch in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicle energy recuperation and battery management.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with 50% duty cycle and 70 A RMS current.

Use Value: 1.2 K/W R_thJC enables junction temperature rise of only 84 °C at 70 W dissipation, supporting continuous operation within 175 °C limit.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) AC-DC Front-End

Use Scenario: Half-bridge phase leg in 3-phase brushless motor driver for EPS systems requiring >100 kcycles lifetime and fault-tolerant operation.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; commutated at 10–30 kHz with dead-time controlled by MCU.

Use Value: Co-packaged body diode with 100 ns t_rr minimizes shoot-through risk and reduces external diode count, lowering BOM cost and PCB area.

Use Scenario: Active clamp switch in totem-pole PFC stage of 6.6 kW OBC, handling 400 V DC bus and 35 A RMS input current.

IC Role / Device Role / Timing Role: Fast-switching clamp MOSFET synchronized to AC line zero-crossings; conducts for <1 µs per cycle.

Use Value: 3350 pF C_iss and 105 pF Crss enable clean voltage transitions with minimal EMI, meeting CISPR-25 Class 5 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70N12S3-11	Same die, TO-220-3 through-hole package; R_thJA = 62 K/W (vs. 40 K/W for SMD version)	Better suited for prototyping or low-volume assemblies where manual soldering or heatsink mounting is preferred	Select when mechanical robustness and serviceability outweigh thermal performance needs
IPB80N12S3-11	Higher 80 A rating, 9.0 mΩ R_DS(on) max, same package; 15% larger die area and 10% higher Q_g	Required for designs needing >70 A continuous current or lower conduction loss at elevated temperatures	Choose when system-level derating demands headroom beyond 70 A at 125 °C ambient

Compared with IPP70N12S3-11 and IPB80N12S3-11, IPB70N12S311ATMA1 offers optimal balance of SMD thermal performance (R_thJC = 1.2 K/W), production-ready reflow compatibility (MSL1), and proven automotive qualification - making it ideal for volume-manufactured 48 V subsystems where board space and thermal management are constrained.

Availability

IPB70N12S311ATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, electric power steering systems, and on-board chargers requiring stable component supply across automotive production lifecycles.

Supply support for IPB70N12S311ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-reliability automotive power conversion - emphasizing avalanche ruggedness, high-temperature operation, and AEC-Q101 compliance over general-purpose switching performance.

FAQ

What is the maximum allowable gate-source voltage for IPB70N12S311ATMA1?

The absolute maximum V_GS is ±20 V, but the recommended operating range is –10 V to +15 V for reliable long-term performance. Exceeding +15 V risks accelerated gate oxide degradation, while negative gate bias below –10 V may cause unintended channel inversion in high-dV/dt environments. Gate driver design must include clamping or Zener protection to stay within these limits.

Does IPB70N12S311ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 70 A switching at 200 kHz, a 3.5 Ω resistor is specified in the datasheet for turn-on/turn-off timing characterization. Actual value depends on driver capability and layout parasitics; values between 2.2 Ω and 10 Ω are typical. Lower values reduce switching loss but increase EMI and gate driver stress.

Can IPB70N12S311ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see Fig. 8) enables inherent current sharing when paralleled. Layout must ensure matched gate and source inductance paths, and individual gate resistors are recommended. Derate total current by 15% for two devices and 25% for three or more to account for thermal coupling and parameter spread.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 70 A continuous forward current and 280 A pulsed, with 1.2 V max V_SD at 70 A and 25 °C. However, its reverse recovery charge (Q_rr = 265 nC) and time (t_rr = 100 ns) make it less efficient than discrete Schottky diodes above 100 kHz; use synchronous FET control to minimize conduction time in high-frequency designs.

IPB70N12S311ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70N12S311ATMA1 FAQ

1.How can I place an order for IPB70N12S311ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70N12S311ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70N12S311ATMA1 reliable?

The price and inventory of IPB70N12S311ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N12S311ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB70N12S311ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N12S311ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70N12S311ATMA1?

IPB70N12S311ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70N12S311ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70N12S311ATMA1?

For technical support, including IPB70N12S311ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N12S311ATMA1 requirements.

6.How does Aetrix verify that IPB70N12S311ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB70N12S311ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N12S311ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB70N12S311ATMA1?

All IPB70N12S311ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N12S311ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70N12S311ATMA1 part is unused and in its original packaging.

Return procedure for IPB70N12S311ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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