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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB70P04P409ATMA1

Name: IPB70P04P409ATMA1
Brand: Infineon Technologies
SKU: IPB70P04P409ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70P04P409ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70P04P409ATMA1.pdf

Description:: MOSFET N-CH 40V 72A D2PAK

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Inventory:9,694

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Product details

Overview

IPB70P04P409ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -40 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 6.9–9.4 mΩ R_DS(on) at V_GS = -10 V. It features AEC qualification, 175 °C operation, MSL1 reflow compatibility, and 100% single-pulse avalanche testing-designed for high-reliability automotive power switches in battery disconnect and reverse polarity protection circuits.

For engineers reviewing the IPB70P04P409ATMA1 datasheet, IPB70P04P409ATMA1 pinout, IPB70P04P409ATMA1 application, or IPB70P04P409ATMA1 equivalent, key selection criteria include verified R_DS(on) at -70 A, thermal resistance of 2 K/W (junction-to-case), gate charge profile (Q_g = 54–70 nC), and SMD-compatible PG-TO263-3-2 package with exposed drain pad.

Technical Context

This OptiMOS®-P2 device uses trench-based silicon technology optimized for low R_DS(on) × Q_g figure-of-merit in P-channel configurations. Its gate threshold voltage range (-2.0 to -4.0 V) ensures robust turn-on control under automotive supply variations, while the 100% avalanche-tested design supports unclamped inductive switching in load dump or motor drive scenarios.

The MOSFET exhibits C_iss = 3700–4810 pF, C_oss = 1400–1820 pF, and Crss = 40–80 pF at V_DS = 0 V, enabling predictable switching behavior in synchronous rectification and high-side switch topologies where Miller-induced shoot-through must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V automotive systems with load dump margin
R_DS(on)	6.9–9.4 mΩ @ V_GS = -10 V, I_D = -70 A - Confirmed on-resistance enabling <1 W conduction loss at 70 A
I_D (cont)	-70 A @ T_C = 25 °C - Continuous current rating validated with thermal derating curve up to 100 °C case temp
E_AS	24 mJ - Single-pulse avalanche energy measured at I_D = -36 A, supporting inductive transient handling
Q_g	54–70 nC - Total gate charge defining drive strength requirement for <100 ns switching transitions
R_thJC	2 K/W - Junction-to-case thermal resistance enabling direct heatsink mounting without thermal interface compromise
T_j max	+175 °C - Maximum junction temperature allowing operation in engine bay environments

Pinout & Package

IPB70P04P409ATMA1 is housed in PG-TO263-3-2 (D²PAK) package with exposed drain pad on bottom side for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts -10 V logic-level drive; threshold range (-2.0 to -4.0 V) ensures reliable turn-on with standard microcontroller outputs
Pin 2 (Drain)	High-side power path	Exposed metal tab electrically and thermally connected to drain; requires insulated mounting or PCB copper pour for heatsinking
Pin 3 (Source)	Reference node	Connected to system ground or battery negative; defines gate-source bias reference for P-channel operation

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, body electronics, and ADAS power stages
100% avalanche tested	Each unit passes single-pulse E_AS = 24 mJ test, eliminating need for external snubbers in inductive loads
MSL1 rating	Suitable for lead-free reflow up to 260 °C peak, compatible with standard SMT assembly lines
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU and automotive ELV requirements

Applications

Battery Disconnect Switch

Reverse Polarity Protection

Use Scenario: Isolating 12 V battery from vehicle ECU during ignition-off to prevent parasitic drain.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as controlled series switch between battery positive and load rail.

Use Value: Low R_DS(on) (≤9.4 mΩ) limits voltage drop to <0.7 V at 70 A, preserving system efficiency and thermal margin.

Use Scenario: Protecting infotainment head unit against damage from incorrect battery terminal connection.

IC Role / Device Role / Timing Role: In-line P-channel MOSFET placed between input supply and downstream DC/DC converter.

Use Value: Fast turn-off (<31 ns fall time) and robust V_GS rating (±20 V) ensure immediate blocking upon reverse voltage detection.

Engine Control Module Power Stage

Electric Power Steering (EPS) Precharge Circuit

Use Scenario: Driving solenoid valves and fuel injectors in harsh under-hood environments.

IC Role / Device Role / Timing Role: High-current switching element in half-bridge or high-side driver configuration.

Use Value: 175 °C T_j max and 2 K/W R_thJC enable stable operation without active cooling in sealed ECM enclosures.

Use Scenario: Limiting inrush current into EPS motor controller capacitors during startup.

IC Role / Device Role / Timing Role: Soft-start switch controlling ramp-up of main bus voltage before full-power engagement.

Use Value: Controlled gate charge (Q_g = 54–70 nC) allows precise timing of precharge duration using simple RC or MCU-driven gate driver.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70P04P4-09	Same die, PG-TO220-3-1 package; higher R_thJA (62 K/W vs. 40 K/W on PCB)	Preferred for through-hole prototyping or lower-power modules where heatsink mounting is simpler	Select when board space permits TO-220 footprint and thermal budget allows higher ambient rise
IPB80P04P4-01	Higher R_DS(on) (8.5–11.5 mΩ), same V_DS/I_D ratings, improved Q_gd/Q_gs ratio	Better suited for high-frequency PWM in DC/DC converters due to reduced Miller effect	Choose for >100 kHz switching where gate drive loss dominates over conduction loss

Compared with IPP70P04P4-09 and IPB80P04P4-01, IPB70P04P409ATMA1 delivers lowest R_DS(on) in surface-mount form factor, making it optimal for space-constrained, thermally demanding automotive modules requiring minimal conduction loss and proven avalanche ruggedness.

Availability

IPB70P04P409ATMA1 is available at Aetrix Electronics and suitable for automotive battery management, engine control units, electric power steering systems, and ADAS domain controllers requiring stable component supply across extended product lifecycles.

Supply support for IPB70P04P409ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-P2 family-engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V and 24 V automotive power networks.

FAQ

What is the maximum allowable gate-source voltage for IPB70P04P409ATMA1?

The absolute maximum V_GS is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to -10 V for full enhancement and 0 V for turn-off, avoiding negative transients exceeding -20 V.

Does IPB70P04P409ATMA1 require a gate resistor in automotive applications?

Yes-a gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. This prevents unintended oscillation during switching transitions and reduces EMI, especially critical in safety-critical automotive subsystems operating near sensitive sensors or communication buses.

Can IPB70P04P409ATMA1 be used in parallel configurations?

Yes, but only with careful layout and gate drive matching. The device's positive R_DS(on) temperature coefficient enables current sharing, yet mismatched gate loop inductance or thermal gradients can cause imbalance. Use identical gate resistors, symmetrical PCB routing, and shared heatsinking to maintain ≤10% current deviation at full load.

Is the drain tab electrically isolated in the PG-TO263-3-2 package?

No-the drain tab is directly connected to the internal drain metallization and must be treated as a live high-voltage node. When mounted on a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory unless the heatsink is referenced to the same potential as the drain circuit.

IPB70P04P409ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB70P04P409ATMA1 FAQ

1.How can I place an order for IPB70P04P409ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70P04P409ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70P04P409ATMA1 reliable?

The price and inventory of IPB70P04P409ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70P04P409ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB70P04P409ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70P04P409ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70P04P409ATMA1?

IPB70P04P409ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70P04P409ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70P04P409ATMA1?

For technical support, including IPB70P04P409ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70P04P409ATMA1 requirements.

6.How does Aetrix verify that IPB70P04P409ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB70P04P409ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70P04P409ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB70P04P409ATMA1?

All IPB70P04P409ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70P04P409ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70P04P409ATMA1 part is unused and in its original packaging.

Return procedure for IPB70P04P409ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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