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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB70P04P409ATMA2

Name: IPB70P04P409ATMA2
Brand: Infineon Technologies
SKU: IPB70P04P409ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70P04P409ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70P04P409ATMA2.pdf

Description:: MOSFET_(20V 40V) PG-TO263-3

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Inventory:9,345

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Product details

Overview

IPB70P04P409ATMA2 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for automotive and industrial high-current switching, featuring -40 V V_DS, 6.9 mΩ R_DS(on) at -10 V V_GS, and AEC-Q101 qualification. It delivers -70 A continuous drain current at T_C = 25 °C, operates up to +175 °C junction temperature, and is housed in PG-TO263-3-2 (D²PAK) package with 100% avalanche ruggedness.

For engineers reviewing the IPB70P04P409ATMA2 datasheet, IPB70P04P409ATMA2 pinout, IPB70P04P409ATMA2 application, or IPB70P04P409ATMA2 equivalent, key selection criteria include its low R_DS(on) at elevated temperature, robust single-pulse avalanche energy (24 mJ), gate charge profile (Q_g = 54–70 nC), and MSL1 reflow compatibility for automated SMT assembly.

Technical Context

This device implements a trench-based OptiMOS®-P2 silicon structure enabling high channel density and reduced conduction losses in P-channel configuration. Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on under standard logic-level drive while maintaining noise immunity.

Thermal design is supported by a low 2 K/W junction-to-case thermal resistance and validated performance on 6 cm² PCB copper area. Dynamic parameters-including C_iss = 3700–4810 pF, t_r = 15 ns, and t_f = 31 ns-enable fast switching in synchronous buck, load switch, and reverse polarity protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive systems with margin against transients
R_DS(on)	6.9 mΩ (typ) at V_GS = -10 V - Enables <1 W conduction loss at 70 A, critical for thermally constrained layouts
I_D (cont)	-70 A at T_C = 25 °C - Supports high-power DC loads including motors, solenoids, and battery disconnects
E_AS	24 mJ - Confirmed single-pulse avalanche capability eliminates need for external clamping in inductive switching
Q_g	54–70 nC - Defines gate driver power requirement and switching speed trade-off in PWM applications
T_j max	+175 °C - Qualified for under-hood automotive environments without derating penalties
R_thJC	2 K/W - Enables direct heatsink mounting for efficient thermal management in power modules

Pinout & Package

IPB70P04P409ATMA2 is packaged in PG-TO263-3-2 (D²PAK), a surface-mount variant of TO-263 with isolated tab, rated for high thermal and mechanical reliability in automotive-grade production.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts negative gate-source voltage; threshold range (-2.0 to -4.0 V) enables TTL/CMOS-compatible driving with level-shifting
2 (Source)	Reference node	Common return path for load current; tied to system ground or high-side rail depending on topology
3 (Drain)	Power output	Connected to PCB copper area ≥6 cm² for thermal dissipation; electrically isolated tab supports heatsink mounting

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, HTRB, and UHAST
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at rated conditions, ensuring field reliability in inductive switching
MSL1, 260 °C peak reflow	Compatible with standard lead-free SMT processes without popcorn or delamination risk
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU and IPC/JEDEC J-STD-020
OptiMOS®-P2 technology	Trench-gate process delivering 20% lower R_DS(on) × Q_g figure-of-merit vs prior P-channel generations

Applications

Automotive Body Control Module

Industrial Motor Drive

Use Scenario: High-side power switch for door lock actuators and seat positioners in 12 V vehicle networks.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with integrated body diode for freewheeling.

Use Value: Low R_DS(on) minimizes heat generation in sealed enclosures; AEC-Q101 qualification ensures 15-year field life.

Use Scenario: Half-bridge high-side switch in 24 V DC brush motor controllers for factory automation.

IC Role / Device Role / Timing Role: Power transistor controlling motor phase voltage with fast turn-off (t_f = 31 ns) to reduce shoot-through risk.

Use Value: 175 °C operation allows mounting near motors without thermal throttling; 24 mJ E_AS withstands back-EMF spikes.

Reverse Polarity Protection

Battery Management System

Use Scenario: Input protection circuit for portable medical devices powered from external 12 V adapters.

IC Role / Device Role / Timing Role: P-MOSFET placed in series with supply rail to block reverse connection during miswiring.

Use Value: Ultra-low R_DS(on) limits voltage drop to <500 mV at full load, preserving system efficiency and battery runtime.

Use Scenario: Cell balancing and isolation switch in 48 V Li-ion battery packs for e-bikes and energy storage.

IC Role / Device Role / Timing Role: High-current solid-state relay replacing mechanical contactors for cycle-life-critical switching.

Use Value: -70 A rating supports >3 kW discharge bursts; 100% avalanche testing prevents failure during cell overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80P04P412ATMA2	Higher R_DS(on) (7.8 mΩ typ), same V_DS and package	Suitable where marginally higher conduction loss is acceptable for cost optimization	Select when thermal budget allows 12% higher I²R loss and BOM cost reduction is prioritized
IPP70P04P409AKSA1	Same silicon die but in PG-TO220-3-1 through-hole package; no MSL1 rating	Preferred for prototyping or low-volume industrial controls requiring manual assembly	Choose only for non-SMT designs where reflow compatibility is not required and heatsinking uses clip-on solutions

Compared with IPB80P04P412ATMA2 and IPP70P04P409AKSA1, the IPB70P04P409ATMA2 offers the lowest R_DS(on) in an MSL1-rated SMD package-making it optimal for high-reliability, high-density automotive power stages where thermal and assembly constraints are tight.

Availability

IPB70P04P409ATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, reverse polarity protection circuits, and battery management systems requiring stable component supply across multi-year production cycles.

Supply support for IPB70P04P409ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V and 24 V automotive and industrial power systems.

FAQ

What is the maximum allowable gate-source voltage for IPB70P04P409ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent oxide damage. For reliable switching, gate drive should be limited to -10 V for full enhancement and maintained within -2.0 V to -4.0 V threshold range to avoid partial turn-on and increased R_DS(on).

Does IPB70P04P409ATMA2 require a gate resistor in typical applications?

Yes-a gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and control dV/dt during switching. This prevents false triggering and reduces EMI, especially in high-frequency PWM or paralleled configurations where gate charge (Q_g = 54–70 nC) interacts with driver impedance.

Can IPB70P04P409ATMA2 be used in parallel with identical units?

Yes, due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Successful paralleling requires matched layout symmetry, individual gate resistors, and thermal coupling via shared heatsink. Derating total current by 15% is advised to account for parametric spread and thermal gradients.

Is the drain-source breakdown voltage tested per unit or lot sample?

V_BR(DSS) is 100% production-tested per unit at -40 V with I_D = -1 mA. The specification guarantees minimum -40 V across all operating temperatures, with typical values reaching -43 V at 25 °C and degrading only ~0.1 V/°C up to 175 °C per characterization data.

IPB70P04P409ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70P04P409ATMA2 FAQ

1.How can I place an order for IPB70P04P409ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70P04P409ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70P04P409ATMA2 reliable?

The price and inventory of IPB70P04P409ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70P04P409ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB70P04P409ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70P04P409ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70P04P409ATMA2?

IPB70P04P409ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70P04P409ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70P04P409ATMA2?

For technical support, including IPB70P04P409ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70P04P409ATMA2 requirements.

6.How does Aetrix verify that IPB70P04P409ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB70P04P409ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70P04P409ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB70P04P409ATMA2?

All IPB70P04P409ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70P04P409ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70P04P409ATMA2 part is unused and in its original packaging.

Return procedure for IPB70P04P409ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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