Infineon Technologies IPB77N06S212ATMA1

Overview

IPB77N06S212ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS® power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 77 A continuous drain current at T_C = 25 °C, and ultra-low 9.5–11.7 mΩ R_DS(on) (typ./max). It is AEC-Q101 qualified, operates up to 175 °C, and is 100% avalanche tested - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB77N06S212ATMA1 datasheet, IPB77N06S212ATMA1 pinout, IPB77N06S212ATMA1 application, or IPB77N06S212ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (R_thJC = 0.95 K/W), avalanche energy (E_AS = 280 mJ), and SMD-compatible TO263-3 footprint for high-current switching in constrained thermal environments.

Technical Context

This device uses a trench-gate silicon process optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (2.1–4.0 V) enables robust turn-on with standard 5 V or 10 V logic-level drivers, while its 1770 pF input capacitance and 120 pF reverse transfer capacitance support stable gate driving under high di/dt conditions.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 77 A and 45–60 ns reverse recovery time, enabling synchronous rectification and freewheeling in half-bridge configurations without external Schottky diodes. Thermal design leverages direct die-to-case conduction via the exposed drain pad in the PG-TO263-3-2 package.

Key Specifications

Pinout & Package

IPB77N06S212ATMA1 uses the PG-TO263-3-2 surface-mount package with exposed drain pad (Pin 2), standard 3-pin layout, and lead-free green finish compliant with RoHS and MSL1 reflow (260 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP77N06S212ATMA1, the TO220 variant trades PCB area for easier thermal retrofitting; versus IPB80N04S404ATMA1, the 55 V rating and proven avalanche margin make IPB77N06S212ATMA1 preferable for 48 V automotive main power rails despite slightly higher Q_g.

Availability

IPB77N06S212ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and industrial motor starters requiring stable component supply across extended temperature and high-reliability lifecycles.

Supply support for IPB77N06S212ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial 24–48 V systems where thermal robustness and avalanche reliability are critical.

FAQ

What is the maximum allowable gate-source voltage for IPB77N06S212ATMA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operation above +15 V or below -10 V risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) optimization, with 5 V sufficient for partial turn-on in logic-level applications.

Does IPB77N06S212ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and limit peak gate current. For typical 12 V gate drivers and 60 nC Q_g, a 4.7 Ω to 10 Ω resistor provides optimal trade-off between switching speed (t_r/t_f ≈ 25–30 ns) and EMI suppression. Lower values increase dV/dt stress; higher values slow switching and raise losses.

Can IPB77N06S212ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derate total current by 15% for two devices and 25% for three or more to ensure thermal balance.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 77 A continuous forward current and exhibits 0.9–1.3 V V_SD at 77 A and 25 °C. However, its 45–60 ns t_rr and 64–80 nC Q_rr generate switching loss during commutation; for >200 kHz operation, external Schottky clamping is recommended to reduce reverse recovery stress.