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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB77N06S3-09

Name: IPB77N06S3-09
Brand: Infineon Technologies
SKU: IPB77N06S3-09
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB77N06S3-09

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB77N06S3-09.pdf

Description:: MOSFET N-CH 55V 77A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB77N06S3-09 from Infineon Technologies is an N-channel enhancement-mode OptiMOS®-T2 power MOSFET designed for high-current, low-R_DS(on) switching in automotive and industrial DC-DC converters and motor control. It delivers 77 A continuous drain current at T_C = 25 °C, 55 V V_DS, 7.7 mΩ typical R_DS(on) at V_GS = 10 V, and is AEC-Q101 qualified for under-hood applications.

For engineers reviewing the IPB77N06S3-09 datasheet, IPB77N06S3-09 pinout, IPB77N06S3-09 application, or IPB77N06S3-09 equivalent, key selection criteria include its 1.4 K/W junction-to-case thermal resistance, 100% avalanche-tested ruggedness, 175 °C maximum operating temperature, and PG-TO263-3-2 surface-mount package with integrated Schottky body diode.

Technical Context

This device employs trench-gate silicon technology optimized for low conduction and switching losses in hard-switched topologies. Its gate charge profile (Q_g = 77–103 nC, Q_gd = 17 nC) supports efficient gate driving at 10 V, while C_iss = 5335 pF and C_oss = 812 pF enable predictable turn-on/turn-off timing in 48 V battery systems.

The integrated body diode exhibits t_rr = 40 ns and Q_rr = 50 nC at I_F = 77 A, enabling synchronous rectification replacement in buck converters. Thermal design is anchored by R_thJC = 1.4 K/W and validated operation up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V nominal bus systems with 20 % overvoltage margin
R_DS(on) max	9.1 mΩ - Ensures ≤ 55 W conduction loss at 77 A, critical for thermally constrained SMD layouts
I_D continuous	77 A @ T_C = 25 °C - Supports high-power BLDC motor phase legs without forced air cooling
E_AS	245 mJ - Confirmed single-pulse avalanche energy enables robustness against inductive switching transients
Q_g	77–103 nC - Determines gate driver current requirement (~1 A peak for 100 ns rise time)
t_r/t_f	51 ns each - Enables >200 kHz PWM operation with minimal switching loss in ZVS-capable topologies
T_j max	+175 °C - Certified for engine compartment mounting in automotive powertrain modules

Pinout & Package

IPB77N06S3-09 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. Pin assignment is standardized across TO-263 variants: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level drive; threshold voltage 2.1–4.0 V ensures TTL/CMOS compatibility
Pin 2 (Drain)	High-side switch node	Exposed copper tab - primary thermal path to PCB heatsink; electrically tied to drain
Pin 3 (Source)	Power return reference	Provides low-inductance source connection; used as local ground reference for gate driver

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive power electronics including EPS, HVAC blowers, and 48 V mild-hybrid DC-DC stages
100 % avalanche tested	Guarantees single-pulse ruggedness to 245 mJ without derating - eliminates need for external snubbers
R_DS(on) = 7.7 mΩ typ.	Reduces conduction loss by ≥15 % vs. prior-generation 60 V MOSFETs at same current density
MSL1 rating (260 °C)	Enables standard lead-free reflow assembly without moisture sensitivity concerns
Integrated Schottky-like body diode	Q_rr = 50 nC and t_rr = 40 ns support efficient freewheeling in synchronous buck converters

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–300 kHz PWM frequency.

Use Value: Low R_DS(on) and fast switching minimize power loss (<1.2 W at 77 A), enabling compact heatsinkless design.

Use Scenario: Phase-leg switching in 3 kW BLDC motor inverters for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode conducting reverse current during commutation.

Use Value: 175 °C rated junction temperature allows operation in sealed enclosures without active cooling.

Onboard Charger (OBC) PFC Stage

Server PSU Primary Switch

Use Scenario: Boost switch in 3.3 kW two-stage OBC front-end with interleaved PFC.

IC Role / Device Role / Timing Role: Hard-switched 55 V-rated transistor handling 77 A peak current per phase.

Use Value: Avalanche ruggedness prevents failure during line surge events, eliminating need for clamping circuits.

Use Scenario: Primary-side switch in 800 W telecom rectifier with 54 V output.

IC Role / Device Role / Timing Role: High-efficiency 55 V MOSFET in forward converter topology operating at 250 kHz.

Use Value: 1.4 K/W R_thJC enables direct thermal coupling to cold plate, sustaining full load at 60 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 55 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP77N06S3-09	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded)	Suitable for prototyping or lower-volume industrial controls where manual assembly is preferred	Select when board-level thermal management favors through-hole mounting or when reworkability is required
IPB80N06S3-09	Higher I_D = 80 A, slightly higher R_DS(on) = 9.5 mΩ max, identical PG-TO263-3-2 footprint	Used in next-gen 48 V systems requiring margin for transient overload conditions	Choose for future-proofing designs needing +3 A headroom without PCB layout change

Compared with IPP77N06S3-09, IPB77N06S3-09 offers superior thermal performance in SMD layouts due to lower R_thJC; versus IPB80N06S3-09, it provides tighter R_DS(on) tolerance at lower cost for stable-load applications.

Availability

IPB77N06S3-09 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and server power supply designs requiring stable component supply and long-term lifecycle assurance.

Supply support for IPB77N06S3-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T2 product line, engineered specifically for high-efficiency, high-reliability 48 V and 12 V automotive and industrial power conversion systems.

FAQ

Is IPB77N06S3-09 suitable for synchronous rectification?

Yes. Its integrated body diode has t_rr = 40 ns and Q_rr = 50 nC at I_F = 77 A, enabling efficient freewheeling in synchronous buck converters. The low R_DS(on) of 7.7 mΩ also minimizes conduction loss when actively driven as a rectifier switch.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±20 V. Operation above ±16 V is not recommended, as gate oxide reliability degrades beyond this limit. Gate drivers must be configured to clamp at ≤15 V for long-term reliability, especially in automotive environments with load-dump transients.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 5–22 Ω) is required to dampen ringing caused by gate loop inductance and Miller capacitance. With Q_gd = 17 nC and C_iss = 5335 pF, uncontrolled ringing can cause false turn-on; a 10 Ω resistor achieves optimal trade-off between switching speed and EMI suppression.

Can IPB77N06S3-09 replace older OptiMOS devices in existing designs?

Yes - it is footprint-compatible with prior PG-TO263-3-2 OptiMOS devices like IPB77N06S2-08. Key improvements include lower R_DS(on) (−12 %), reduced Q_g (−8 %), and extended T_j rating to 175 °C, allowing direct drop-in upgrades in thermally limited applications.

IPB77N06S3-09 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 39A, 10V

Vgs(th) (Max) @ Id:: 4V @ 55µA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5335 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB77N06S3-09 FAQ

1.How can I place an order for IPB77N06S3-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB77N06S3-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB77N06S3-09 reliable?

The price and inventory of IPB77N06S3-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB77N06S3-09 is usually 5 days.

3.What payment methods are accepted for IPB77N06S3-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB77N06S3-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB77N06S3-09?

IPB77N06S3-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB77N06S3-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB77N06S3-09?

For technical support, including IPB77N06S3-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB77N06S3-09 requirements.

6.How does Aetrix verify that IPB77N06S3-09 is sourced from the original manufacturer or authorized distributors?

All IPB77N06S3-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB77N06S3-09 meets industry standards.

7.What is the process for return or replacement of IPB77N06S3-09?

All IPB77N06S3-09 units undergo pre-shipment inspection (PSI). If there is an issue with IPB77N06S3-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB77N06S3-09 part is unused and in its original packaging.

Return procedure for IPB77N06S3-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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