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Infineon Technologies IPB79CN10N G
- Part No.:
- IPB79CN10N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB79CN10N G.pdf
- Description:
- MOSFET N-CH 100V 13A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,370
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Product details
Overview
IPB79CN10N G from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO263-3 (D²PAK) package, rated for 100 V VDS, 13 A continuous drain current at TC = 25 °C, and 79 mΩ max RDS(on) at VGS = 10 V, ID = 13 A. It operates up to 175 °C junction temperature and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server power supplies.
For engineers reviewing the IPB79CN10N G datasheet, IPB79CN10N G pinout, IPB79CN10N G application, or IPB79CN10N G equivalent, this device is selected for its low gate charge × RDS(on) figure of merit (FOM), robust avalanche capability (17 mJ single-pulse), and RoHS-compliant Pb-free plating - critical for thermal reliability and EMI-sensitive SMPS designs.
Technical Context
This OptiMOS®2 power transistor uses planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low RDS(on) while maintaining fast switching performance. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V gate drivers, and its 538–716 pF input capacitance supports stable operation in hard-switched topologies up to 500 kHz.
The device integrates a monolithic body diode with 67 ns reverse recovery time and 114 nC Qrr, enabling efficient synchronous rectification without external Schottky diodes. Thermal resistance RthJC is 4.9 K/W, allowing direct heatsink mounting for high-power density applications under forced-air or natural convection cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V input bus systems with 2× safety margin against transients |
| RDS(on), max | 79 mΩ at VGS = 10 V, ID = 13 A - enables <1 W conduction loss at 10 A output current |
| ID, cont. | 13 A at TC = 25 °C - suitable for 200–300 W point-of-load converters |
| EAS | 17 mJ (ID = 13 A, RGS = 25 Ω) - withstands repetitive inductive switching stress without derating |
| Qg, total | 8–11 nC - reduces gate drive power and enables use with low-current 5 V microcontroller outputs |
| tr/tf | 4–6 ns / 3–4 ns - minimizes switching transition losses in MHz-class resonant converters |
| Tj, max | 175 °C - allows operation in sealed industrial enclosures without active cooling |
Pinout & Package
IPB79CN10N G is housed in PG-TO263-3 (D²PAK) package with exposed drain pad for thermal enhancement. The package measures 10.0 × 12.5 × 2.3 mm and is designed for surface-mount reflow assembly on PCBs with ≥6 cm² copper area on the drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground plane or low-side switch node |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <11 nC charge for full enhancement |
| Pin 3 (Drain) | Power output | Exposed metal pad - must be soldered to ≥6 cm² copper for RthJC = 4.9 K/W |
Key Features
| Feature | Design Value |
|---|---|
| Optimized FOM (Qg × RDS(on)) | Sub-900 mΩ·nC - improves efficiency in 300–500 kHz buck converters by >1.2% vs. legacy MOSFETs |
| Monolithic body diode | Qrr = 114 nC, trr = 67 ns - eliminates need for external anti-parallel diode in synchronous rectifiers |
| Junction temperature rating | 175 °C - extends lifetime in thermally constrained telecom and industrial power modules |
| JEDEC-qualified reliability | Qualified per J-STD-20/JESD22 - validated for reflow, humidity, and temperature cycling in production environments |
Applications
| Server VRM | Industrial DC-DC Converter |
|---|---|
Use Scenario: 12 V input to 1.2 V/100 A output VRM for CPU power delivery in rack-mounted servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter stage. Use Value: 79 mΩ RDS(on) and 11 nC Qg reduce conduction + switching losses by 1.8 W per phase versus prior-gen devices. | Use Scenario: 48 V to 24 V isolated DC-DC converter for PLC I/O modules operating in ambient up to 70 °C. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in active-clamp forward topology. Use Value: 175 °C Tj,max and 17 mJ EAS ensure robustness during load dump transients without snubber redesign. |
| Telecom Rectifier | Motor Drive Half-Bridge |
Use Scenario: 380 V DC bus to 12 V auxiliary supply in 48 V telecom rectifier systems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter. Use Value: 67 ns trr and low Qrr minimize reverse recovery losses at 300 kHz switching frequency. | Use Scenario: 24 V H-bridge driver for BLDC motor control in HVAC fan modules. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with PWM at 20 kHz. Use Value: 13 A ID rating and 4.9 K/W RthJC allow 100% duty cycle operation with minimal heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD78CN10N G | RDS(on) max = 78 mΩ in TO-252-3; RthJC = 4.9 K/W same, but lower power dissipation limit (31 W vs. 31 W) | Preferred for space-constrained PCB layouts where D²PAK footprint is prohibitive | Select when board area is limited and thermal interface to heatsink is impractical |
| IPP80CN10N G | RDS(on) max = 80 mΩ in TO-220-3; higher RthJA (50 K/W) but through-hole mounting enables bolt-down heatsinks | Suitable for prototyping or low-volume industrial controls with manual assembly | Choose when mechanical robustness and serviceability outweigh SMT density requirements |
Compared with IPD78CN10N G and IPP80CN10N G, IPB79CN10N G delivers optimal thermal performance in SMT high-power applications due to its D²PAK package's superior RthJC and larger copper interface - critical for sustained 10+ A loads in automated manufacturing.
Availability
IPB79CN10N G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom rectifiers, and motor drive half-bridges requiring stable component supply across multi-year production cycles.
Supply support for IPB79CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
This device belongs to the OptiMOS®2 family - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power supplies where low RDS(on) and fast switching are mandatory.
FAQ
What is the maximum gate-source voltage rating for IPB79CN10N G?
The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –5 V to +15 V for reliable long-term performance. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching transitions.
Does IPB79CN10N G require a gate resistor for stability?
Yes - a 2.4 Ω gate resistor is used in the datasheet's switching characterization (e.g., td(on), tr). This value balances switching speed and gate oscillation suppression. For 500 kHz operation, values between 1.5 Ω and 4.7 Ω are typical; lower values increase EMI risk, higher values raise switching losses.
Can IPB79CN10N G be used in avalanche mode continuously?
No - the 17 mJ EAS rating applies only to single-pulse avalanche events. Continuous avalanche operation is not characterized or guaranteed. Designers must ensure SOA compliance via snubbers or layout techniques to avoid repetitive avalanche stress during fault conditions.
Is the body diode suitable for reverse conduction in synchronous rectification?
Yes - the integrated body diode has specified trr = 67 ns and Qrr = 114 nC at Tj = 25 °C, making it viable for synchronous rectification in LLC and phase-shifted full-bridge converters up to 300 kHz. Performance degrades above 125 °C, so thermal derating is required in high-ambient designs.
IPB79CN10N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 79mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 716 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 31W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB79CN10N G FAQ
1.How can I place an order for IPB79CN10N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB79CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB79CN10N G reliable?
The price and inventory of IPB79CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB79CN10N G is usually 5 days.
3.What payment methods are accepted for IPB79CN10N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB79CN10N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB79CN10N G?
IPB79CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB79CN10N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB79CN10N G?
For technical support, including IPB79CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB79CN10N G requirements.
6.How does Aetrix verify that IPB79CN10N G is sourced from the original manufacturer or authorized distributors?
All IPB79CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB79CN10N G meets industry standards.
7.What is the process for return or replacement of IPB79CN10N G?
All IPB79CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB79CN10N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB79CN10N G part is unused and in its original packaging.
Return procedure for IPB79CN10N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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