Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N03S4L03ATMA1

Name: IPB80N03S4L03ATMA1
Brand: Infineon Technologies
SKU: IPB80N03S4L03ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB80N03S4L03ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N03S4L03ATMA1.pdf

Description:: MOSFET N-CH 30V 80A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,269

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB80N03S4L03ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET in PG-TO263-3-2 package, rated for 30 V V_DS, 3.4 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 80 A, with AEC-Q101 qualification and 175 °C maximum junction temperature. It delivers high-current switching in motor control inverters and DC-DC converters.

For engineers reviewing the IPB80N03S4L03ATMA1 datasheet, IPB80N03S4L03ATMA1 pinout, IPB80N03S4L03ATMA1 application, or IPB80N03S4L03ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (95 mJ), thermal resistance (R_thJC = 1.6 K/W), and SMD-compatible TO263 footprint for high-power board-level thermal management.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low on-resistance and optimized charge characteristics. Its gate threshold voltage (1.0–2.2 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 60 ns reverse recovery time and 50 nC Q_rr support fast synchronous rectification.

The MOSFET integrates a robust body diode rated for 80 A continuous forward current and 320 A pulsed current, with V_SD = 0.6–1.3 V at I_F = 80 A and T_j = 25 °C. Its 100% avalanche-tested construction ensures reliability under inductive switching stress in automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems
R_DS(on) max	3.4 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A in high-efficiency motor drives
I_D continuous	80 A at T_C = 25 °C - Supported by thermally enhanced D²PAK (PG-TO263-3-2) package
E_AS	95 mJ - Single-pulse avalanche energy rating confirms ruggedness in unclamped inductive switching
Q_g	60–75 nC - Total gate charge determines driver strength requirement for <100 ns switching transitions
R_thJC	1.6 K/W - Junction-to-case thermal resistance enables direct heatsink mounting for >90 W power dissipation
T_j max	+175 °C - Extended temperature operation supports under-hood automotive applications

Pinout & Package

IPB80N03S4L03ATMA1 is housed in PG-TO263-3-2 (D²PAK) package with isolated tab, optimized for surface-mount assembly and high-current PCB thermal conduction via large copper drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ≤16 V absolute max; 12–15 nC Q_gs defines Miller plateau timing
2 (Drain)	High-side or low-side switch node	Connected to internal die backside; electrically tied to exposed metal tab for thermal and current path
3 (Source)	Reference return	Provides source reference for gate drive; carries full load current and body diode return path

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
MSL1 reflow rating	Compatible with standard 260 °C peak reflow profiles without moisture sensitivity concerns
100% avalanche tested	Each unit verified for 95 mJ single-pulse energy handling-no screening failures allowed
Green product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU
Optimized C_iss/C_oss ratio	Typ. 4000 pF / 1000 pF - Supports ZVS operation in resonant topologies

Applications

Automotive Motor Control

Onboard Charger (OBC) DC-DC Stage

Use Scenario: High-side switch in 48 V BLDC inverter for electric power steering (EPS).

IC Role / Device Role / Timing Role: Low-side and high-side synchronous switching element with integrated body diode for regenerative braking commutation.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 5 mΩ devices, enabling smaller heatsinks in space-constrained EPS modules.

Use Scenario: Primary-side synchronous rectifier in bidirectional OBC LLC resonant converter.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_rr MOSFET used in secondary-side synchronous rectification to replace Schottky diodes.

Use Value: 50 nC Q_rr and 60 ns t_rr minimize reverse recovery losses, improving efficiency by 1.2% at 6.6 kW output.

12 V Automotive DC-DC Converter

Industrial 24 V Brushless Fan Driver

Use Scenario: High-current buck switch in 12 V → 5 V/3.3 V point-of-load regulator for ADAS domain controllers.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with 100% duty-cycle capability during startup surge.

Use Value: 175 °C T_j max and 1.6 K/W R_thJC allow sustained 80 A operation in sealed enclosures without forced air cooling.

Use Scenario: Half-bridge leg in compact 24 V fan controller for server rack ventilation.

IC Role / Device Role / Timing Role: Low-R_DS(on) switching transistor driving PWM-controlled brushless motor windings.

Use Value: 3.9 mΩ R_DS(on) at V_GS = 4.5 V enables direct microcontroller GPIO drive without level-shifting, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N03S4L-04	Same die, TO-220-3-1 package; R_thJC = 1.6 K/W but higher R_thJA (62 K/W)	Through-hole mounting; less effective PCB thermal spreading than D²PAK	Preferred for prototyping or low-volume through-hole designs where reflow is unavailable
IPI80N03S4L-04	Same die, TO-262-3-1 package; identical R_thJC but non-isolated tab	Requires insulating hardware for heatsink mounting; lower cost than D²PAK	Selected when mechanical isolation is handled externally and cost-per-unit is critical

Compared with IPP80N03S4L-04 and IPI80N03S4L-04, IPB80N03S4L03ATMA1 offers superior thermal performance in automated SMT lines due to its isolated D²PAK tab and optimized solder joint thermal path-critical for high-reliability automotive production.

Availability

IPB80N03S4L03ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, onboard charger DC-DC conversion, and industrial 24 V fan driver applications requiring stable component supply across multi-year production cycles.

Supply support for IPB80N03S4L03ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 family, engineered specifically for high-efficiency, high-reliability power switching in automotive and industrial 12–48 V systems where low R_DS(on), rugged avalanche behavior, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum gate-source voltage rating for IPB80N03S4L03ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this risks permanent oxide damage. Recommended gate drive is 10 V for full R_DS(on) specification and 4.5 V for logic-level compatibility. Gate drive circuits must include clamping or zener protection to prevent transients from exceeding this limit during switching or ESD events.

Is IPB80N03S4L03ATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes-it is validated for synchronous rectification with 50 nC Q_rr, 60 ns t_rr, and low C_oss (1000–1300 pF). Its 3.4 mΩ R_DS(on) minimizes conduction loss, and the body diode's soft recovery characteristic reduces EMI. Layout must minimize source inductance to preserve timing accuracy in high-frequency (>300 kHz) operation.

Does this MOSFET require a heatsink in 80 A continuous operation?

Yes-continuous 80 A operation requires active or passive heatsinking. With R_thJC = 1.6 K/W and P_tot ≈ 21.8 W at 80 A and 3.4 mΩ, junction temperature rises ~35 K above case. For T_j ≤ 150 °C at 70 °C ambient, a heatsink with ≤ 0.8 K/W total thermal resistance (including interface) is necessary.

How does the PG-TO263-3-2 package differ from TO-220 in thermal performance?

PG-TO263-3-2 (D²PAK) provides lower R_thJA on PCBs with 6 cm² copper area (40 K/W vs. 62 K/W for TO-220), due to larger soldered drain pad area and optimized thermal path through the PCB. Its isolated tab eliminates need for insulating kits, simplifying heatsink integration in SMT-based automotive modules.

IPB80N03S4L03ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N03S4L03ATMA1 FAQ

1.How can I place an order for IPB80N03S4L03ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N03S4L03ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N03S4L03ATMA1 reliable?

The price and inventory of IPB80N03S4L03ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N03S4L03ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N03S4L03ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N03S4L03ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N03S4L03ATMA1?

IPB80N03S4L03ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N03S4L03ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N03S4L03ATMA1?

For technical support, including IPB80N03S4L03ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N03S4L03ATMA1 requirements.

6.How does Aetrix verify that IPB80N03S4L03ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N03S4L03ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N03S4L03ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N03S4L03ATMA1?

All IPB80N03S4L03ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N03S4L03ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N03S4L03ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N03S4L03ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.