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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S204ATMA1

Name: IPB80N04S204ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S204ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S204ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S204ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB80N04S204ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 2.9–3.7 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C-designed for high-efficiency DC-DC converters and motor control stages in automotive body electronics.

For engineers reviewing the IPB80N04S204ATMA1 datasheet, IPB80N04S204ATMA1 pinout, IPB80N04S204ATMA1 application, or IPB80N04S204ATMA1 equivalent, key selection criteria include its 0.5 K/W junction-to-case thermal resistance, 127–170 nC total gate charge, 53–75 ns reverse recovery time, and SMD-compatible TO263 footprint for thermally demanding 12 V/24 V automotive power switching.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 5300 pF input capacitance (C_iss) and 580 pF reverse transfer capacitance (C_rss) support stable gate drive design with moderate Miller effect under 10 V gate bias.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 25 °C, with 85–125 nC reverse recovery charge (Q_rr)-enabling synchronous rectification and freewheeling in hard-switched buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 12 V/24 V automotive battery rails with margin against load dump transients
R_DS(on) max	3.7 mΩ at V_GS = 10 V, I_D = 80 A - enables <1 W conduction loss at 80 A, critical for thermal management in compact modules
I_D continuous	80 A at T_C = 25 °C - limited by bondwire; usable up to 80 A with proper heatsinking per R_thJC = 0.5 K/W
E_AS	810 mJ single-pulse avalanche energy - ensures robustness against inductive switching surges in motor drives
Q_g total	127–170 nC - determines gate driver power requirement and switching speed trade-off in 100–500 kHz SMPS
t_r/t_f	45 ns rise / 32 ns fall - enables fast turn-on/off with minimal overlap loss when driven by 2.2 Ω gate resistor
T_j max	175 °C - allows operation in engine bay environments without derating below full current

Pinout & Package

IPB80N04S204ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), with exposed drain pad for low-inductance, high-current PCB mounting and thermal conduction. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires 127–170 nC charge for full enhancement; sensitive to ESD (±20 V rating)
Pin 2 (Drain)	Main current path output	Exposed copper tab-must be soldered to large PCB copper area (≥6 cm²) for thermal performance; electrically tied to source of internal body diode
Pin 3 (Source)	Reference node for gate drive and current return	Provides low-impedance return path for load current and gate drive loop; critical for minimizing switching noise in high-di/dt applications

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, humidity, and mechanical shock per JESD22 standards
100% avalanche tested	Each unit subjected to single-pulse inductive energy stress up to 810 mJ-ensures field reliability in motor commutation
Green package	Lead-free, RoHS-compliant construction with MSL1 rating for lead-free reflow up to 260 °C peak
Ultra-low R_DS(on)	2.9 mΩ typical at 10 V gate drive-reduces conduction losses by >30% vs. legacy 40 V MOSFETs in same package
High-temperature operation	Rated for continuous operation at 175 °C junction temperature-eliminates need for derating in under-hood designs

Applications

Automotive Body Control Module (BCM)

12 V DC-DC Buck Converter

Use Scenario: Switching power distribution for headlights, HVAC actuators, and window lift motors in modern BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 20–60 A loads with PWM duty cycle modulation.

Use Value: 3.7 mΩ R_DS(on) limits resistive heating to <1.8 W at 60 A, enabling compact heatsinkless PCB layout in space-constrained modules.

Use Scenario: Primary synchronous rectifier in 12 V input, 3.3/5 V output automotive buck regulators powering ADAS sensors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–500 kHz with zero-voltage switching assistance.

Use Value: 0.9–1.3 V V_SD and 85–125 nC Q_rr reduce body diode conduction loss and switching tail energy versus discrete Schottky alternatives.

Electric Power Steering (EPS) Motor Driver

24 V Industrial Motor Starter

Use Scenario: Half-bridge leg in 24 V EPS H-bridge driving brushless assist motor with peak currents >100 A.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional freewheeling current during PWM commutation.

Use Value: 810 mJ E_AS withstands inductive kickback from motor phase windings without clamping circuitry.

Use Scenario: Solid-state contactor replacement in 24 V industrial pumps and compressors requiring soft-start and overload protection.

IC Role / Device Role / Timing Role: Main power switch controlled via microcontroller GPIO with optocoupled isolation.

Use Value: 175 °C T_j max and 0.5 K/W R_thJC allow sustained 80 A operation in sealed enclosures without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S204XTMA1	Same die, PG-TO220-3-1 through-hole package; R_thJA = 62 K/W (leaded) vs. 40 K/W (SMD w/6 cm² copper)	Better suited for prototyping or low-volume assemblies where manual soldering or socketing is preferred	Select for lab validation or legacy board compatibility; avoid in high-power density production due to inferior thermal performance
STL80N4LF6AG	40 V, 80 A, but higher R_DS(on) (4.2 mΩ typ), lower Q_g (105 nC), and no AEC-Q101 certification	Acceptable for non-automotive industrial motor drives where qualification is not mandated	Choose only for cost-sensitive non-automotive applications; not suitable for AEC-Q101-requiring systems

Compared with IPP80N04S204XTMA1 and STL80N4LF6AG, IPB80N04S204ATMA1 delivers superior thermal performance in SMD layouts and guaranteed automotive qualification-making it the sole choice for volume production in AEC-compliant power stages where board space and junction temperature are constrained.

Availability

IPB80N04S204ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80N04S204ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-current, low-voltage automotive power conversion and motor control applications demanding AEC-Q101 compliance and high thermal resilience.

FAQ

What is the maximum gate-source voltage rating for IPB80N04S204ATMA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both extremes. Operation above +20 V risks permanent oxide damage, while negative gate voltage beyond –20 V may cause threshold shift. Recommended gate drive is 10 V for full enhancement with margin; 5 V is insufficient for low R_DS(on) operation.

Does IPB80N04S204ATMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to control dV/dt and prevent oscillation. With a typical gate charge of 148.5 nC and target 50 ns rise time, a 2.2 Ω resistor is recommended when driven by a 1–2 A peak gate driver. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses.

Can IPB80N04S204ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherent current sharing. For reliable paralleling, match gate drive loop inductance, use Kelvin source connections, and ensure identical PCB thermal vias and copper area per device to maintain uniform junction temperature across all units.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is rated for 80 A continuous forward current and 320 A pulsed current. Its 0.9–1.3 V V_SD and 53–75 ns t_rr make it viable for synchronous rectification in buck converters up to 500 kHz, though external Schottky may still be preferred for ultra-high efficiency at light loads.

IPB80N04S204ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S204ATMA1 FAQ

1.How can I place an order for IPB80N04S204ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S204ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S204ATMA1 reliable?

The price and inventory of IPB80N04S204ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S204ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S204ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S204ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S204ATMA1?

IPB80N04S204ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S204ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S204ATMA1?

For technical support, including IPB80N04S204ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S204ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S204ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S204ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S204ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S204ATMA1?

All IPB80N04S204ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S204ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S204ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S204ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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