Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S2L03ATMA1

Name: IPB80N04S2L03ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S2L03ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB80N04S2L03ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S2L03ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,848

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB80N04S2L03ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching, featuring 40 V V_DS, 3.1 mΩ max R_DS(on) at V_GS = 10 V and 80 A continuous drain current at T_C = 25 °C, with AEC-Q101 qualification and 175 °C operation for under-hood powertrain modules.

For engineers reviewing the IPB80N04S2L03ATMA1 datasheet, IPB80N04S2L03ATMA1 pinout, IPB80N04S2L03ATMA1 application, or IPB80N04S2L03ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, unclamped inductive switching (UIS) energy rating, thermal resistance (R_thJC = 0.5 K/W), and integrated body diode recovery performance (Q_rr = 145–180 nC).

Technical Context

This OptiMOS® device employs trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching dynamics (t_r = 50 ns, t_f = 27 ns) and low gate charge (Q_g = 163–213 nC). Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The integrated body diode is fully rated for 80 A continuous forward current and exhibits controlled reverse recovery (t_rr = 62–78 ns, Q_rr = 145–180 nC), supporting synchronous rectification and half-bridge configurations in DC-DC converters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with transient margin.
R_DS(on) max @ V_GS = 10 V	3.1 mΩ - Enables <1.5 W conduction loss at 80 A, reducing heatsink requirements in compact power stages.
I_D continuous @ T_C = 25 °C	80 A - Sustained current capability with bondwire-limited rating; chip thermal limit exceeds 200 A.
E_AS single-pulse	810 mJ - Confirmed avalanche robustness for unclamped inductive switching in motor control fault conditions.
Q_g total	163–213 nC - Determines gate driver power demand and switching loss trade-off in 100–200 kHz SMPS designs.
t_r/t_f	50 ns / 27 ns - Supports high-frequency operation with minimal overlap loss in hard-switched topologies.
R_thJC	0.5 K/W - Enables precise junction temperature estimation using case temperature measurement in thermal management.

Pinout & Package

IPB80N04S2L03ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal relief. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Logic-level input controlling channel conduction; requires ≤20 V absolute max gate-source voltage.
Pin 2 (D)	Drain terminal (exposed tab)	Main high-side current path; electrically connected to copper drain pad for thermal and electrical conduction.
Pin 3 (S)	Source terminal	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and UIS.
MSL1 reflow rating	Rated for peak soldering temperatures up to 260 °C, compatible with standard lead-free assembly processes.
Ultra-low R_DS(on) at 4.5 V	Max 4.2 mΩ at V_GS = 4.5 V - Ensures full enhancement with 5 V MCU I/O or automotive CAN/LIN transceiver logic outputs.
100% UIS tested	Each unit validated for single-pulse avalanche energy ≥810 mJ - guarantees ruggedness in inductive load switching.
Green package	Lead-free and RoHS-compliant construction with halogen-free molding compound per JEDEC J-STD-020.

Applications

Automotive Body Control Module (BCM)

Industrial 24 V DC Motor Drive

Use Scenario: High-side load switching for headlamp, fog lamp, and radiator fan control in vehicle BCMs.

IC Role / Device Role / Timing Role: Power switch managing up to 80 A resistive/inductive loads with PWM dimming and short-circuit protection.

Use Value: Low R_DS(on) minimizes power loss and thermal rise in sealed enclosures; AEC-Q101 ensures reliability over 15-year vehicle lifetime.

Use Scenario: Half-bridge output stage in 24 V brushed DC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element synchronized with complementary high-side FET in 20 kHz PWM operation.

Use Value: Fast t_f (27 ns) and low Q_gd reduce cross-conduction losses; integrated diode supports freewheeling during dead-time.

Server PSU OR-ing Circuit

Electric Power Steering (EPS) Pre-driver Stage

Use Scenario: OR-ing diode replacement in redundant 12 V server power supply backplanes.

IC Role / Device Role / Timing Role: Bidirectional synchronous rectifier operating in linear mode during current sharing and hard-switched during fault isolation.

Use Value: R_DS(on) < 3.1 mΩ cuts conduction loss by >80% vs. Schottky diodes; low V_GS(th) enables simple gate control from system supervisor IC.

Use Scenario: Pre-driver stage feeding gate of main EPS inverter IGBTs in 48 V hybrid steering systems.

IC Role / Device Role / Timing Role: Level-shifted gate driver output buffer delivering high peak current (>5 A) with minimal propagation delay.

Use Value: Low C_iss (6000 pF) and Q_gs (19–24 nC) enable fast, low-jitter turn-on critical for torque ripple reduction below 100 Hz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S2L-03	Identical die, but in PG-TO220-3-1 through-hole package; R_thJC = 0.5 K/W same, but R_thJA higher due to leadframe thermal path.	Better suited for prototyping, lower-volume industrial controls where manual assembly or socketing is preferred.	Select when board space allows TO-220 mounting and thermal interface to heatsink is via screw-down rather than soldered pad.
IPB80N04S4-02	Newer OptiMOS™ 4 generation; 2.2 mΩ R_DS(on) @ 10 V, 150 °C T_j max, but not AEC-Q101 qualified.	Targeted at commercial/industrial SMPS and UPS where automotive qualification is unnecessary.	Choose for higher efficiency in non-automotive 40 V systems; avoid if AEC-Q101 compliance or 175 °C operation is mandatory.

Compared with IPP80N04S2L-03, IPB80N04S2L03ATMA1 offers superior thermal interface via D²PAK solder attachment and tighter R_DS(on) distribution; versus IPB80N04S4-02, it trades 0.9 mΩ higher on-resistance for guaranteed automotive qualification and extended temperature range.

Availability

IPB80N04S2L03ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and server power OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IPB80N04S2L03ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-current, low-voltage switching in automotive power distribution and industrial motor control where gate drive simplicity and thermal efficiency are critical.

FAQ

Is IPB80N04S2L03ATMA1 pin-compatible with IPP80N04S2L-03?

Yes - both share identical pinout (G-D-S) and electrical specifications, differing only in package: IPB80N04S2L03ATMA1 uses PG-TO263-3-2 (D²PAK), while IPP80N04S2L-03 uses PG-TO220-3-1. Thermal design and PCB layout must be adapted accordingly.

What is the maximum recommended gate resistor for 100 kHz switching?

A 10 Ω gate resistor is typical for 100 kHz operation, balancing switching speed (t_r/t_f) and gate driver stress. With Q_g = 190 nC avg and V_GS swing of 10 V, peak gate current remains below 1 A, avoiding driver saturation.

Does this MOSFET require a negative gate turn-off voltage?

No - the device has no requirement for negative V_GS; gate drive between 0 V (off) and +10 V (fully enhanced) is sufficient. Negative bias is unnecessary due to low V_GS(th) hysteresis and robust dV/dt immunity per AEC-Q101 testing.

Can IPB80N04S2L03ATMA1 replace older IPB080N04LG in existing designs?

Not directly - IPB080N04LG is a 40 V, 80 A device but with higher R_DS(on) (4.5 mΩ @ 10 V) and no AEC-Q101 qualification. While footprint may match, thermal and reliability margins differ significantly; redesign validation is required for automotive use.

IPB80N04S2L03ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 213 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S2L03ATMA1 FAQ

1.How can I place an order for IPB80N04S2L03ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S2L03ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S2L03ATMA1 reliable?

The price and inventory of IPB80N04S2L03ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S2L03ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S2L03ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S2L03ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S2L03ATMA1?

IPB80N04S2L03ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S2L03ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S2L03ATMA1?

For technical support, including IPB80N04S2L03ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S2L03ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S2L03ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S2L03ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S2L03ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S2L03ATMA1?

All IPB80N04S2L03ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S2L03ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S2L03ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S2L03ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.