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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S303ATMA1

Name: IPB80N04S303ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S303ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S303ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S303ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB80N04S303ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 2.5–3.2 mΩ R_DS(on) (SMD version). It operates up to 175 °C, is AEC-Q101 qualified, 100% avalanche tested, and used in high-current DC-DC converters and motor control stages.

For engineers reviewing the IPB80N04S303ATMA1 datasheet, IPB80N04S303ATMA1 pinout, IPB80N04S303ATMA1 application, or IPB80N04S303ATMA1 equivalent, key selection criteria include R_DS(on) at 80 A/10 V, thermal resistance (R_thJC = 0.8 K/W), avalanche energy (E_AS = 526 mJ), and gate charge (Q_g = 83–110 nC) for switching loss optimization.

Technical Context

This OptiMOS®-T device uses trench-based silicon technology optimized for low conduction and switching losses in high-efficiency power stages. Its gate threshold voltage (2.1–4.0 V) enables robust 10 V gate drive compatibility while maintaining noise immunity, and its integrated body diode supports synchronous rectification with t_rr = 46 ns and Q_rr = 73 nC.

The MOSFET features a thermally enhanced SMD package (PG-TO263-3-2) with direct-drain copper pad for low-inductance PCB mounting. Its dynamic parameters-including C_iss = 5600–7300 pF, C_oss = 1540–2000 pF, and Crss = 240–350 pF-are specified at V_GS = 0 V and f = 1 MHz, supporting accurate snubber and gate driver design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on) (SMD)	2.5–3.2 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A in compact layouts
I_D (continuous)	80 A @ T_C = 25 °C - Supports high-current motor phases or battery protection circuits
E_AS	526 mJ @ I_D = 80 A - Withstands single-pulse inductive energy without failure in relay/snubberless designs
Q_g	83–110 nC - Determines gate driver current requirement and switching transition time
R_thJC	0.8 K/W - Enables efficient heat transfer to heatsink or PCB copper area (6 cm²)
t_rr	46 ns - Limits reverse recovery loss during hard-switched freewheeling in buck or half-bridge topologies

Pinout & Package

IPB80N04S303ATMA1 is housed in PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; requires ≤110 nC total charge for full turn-on
Pin 2 (Drain)	High-side or low-side power node	Exposed copper tab-must be soldered to large PCB copper area or heatsink for thermal management
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current; critical for Kelvin source layout in precision current monitoring

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications requiring zero defect reliability
100% avalanche tested	Guarantees ruggedness against inductive switching stress without derating
MSL1 rating (260 °C peak reflow)	Enables standard lead-free SMT assembly without moisture sensitivity concerns
Ultra-low R_DS(on) (2.5 mΩ typ.)	Reduces conduction loss by >30% vs. legacy 40 V MOSFETs at 80 A, improving system efficiency
175 °C maximum junction temperature	Supports operation in under-hood environments without thermal throttling

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V-to-48 V bidirectional converter in 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with forced-air cooling.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss to <1.6 W at 80 A, enabling >96% peak efficiency.

Use Scenario: Three-phase inverter stage for 3 kW BLDC pumps in HVAC systems.

IC Role / Device Role / Timing Role: Low-side power switch with 46 ns diode t_rr minimizing cross-conduction loss during PWM commutation.

Use Value: Avalanche-rated structure eliminates need for external clamping diodes in regenerative braking events.

Server PSU Primary Switch

Battery Protection Circuits

Use Scenario: Primary-side switch in 2 kW telecom rectifier with LLC resonant topology.

IC Role / Device Role / Timing Role: Hard-switched MOSFET handling 80 A pulsed drain current (I_D,pulse = 320 A).

Use Value: 0.8 K/W R_thJC allows direct heatsink mounting to sustain 188 W P_tot at T_C = 25 °C.

Use Scenario: Main discharge FET in 4-cell Li-ion battery pack with overcurrent cutoff.

IC Role / Device Role / Timing Role: Normally-on protection switch controlled via gate driver IC with fast turn-off capability.

Use Value: 526 mJ E_AS withstands short-circuit energy during fault response (<100 µs).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S403ATMA1	Lower R_DS(on) (2.0–2.6 mΩ), higher Q_g (120–150 nC), same package	Better conduction loss but higher switching loss at >200 kHz	Select when thermal budget dominates over switching frequency constraints
IRF8721TRPBF	Higher R_DS(on) (3.8 mΩ), lower Q_g (25 nC), SO-8 package	Limited to ≤30 A continuous; unsuitable for automotive under-hood use	Select only for cost-sensitive, low-power industrial SMPS where AEC-Q101 is not required

Compared with IPB80N04S303ATMA1, the IPB80N04S403ATMA1 improves conduction efficiency at the expense of gate drive strength and switching speed, while the IRF8721TRPBF trades off current rating, ruggedness, and qualification for footprint and cost reduction in non-automotive designs.

Availability

IPB80N04S303ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server power supply designs requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for IPB80N04S303ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-temperature automotive and industrial power conversion where low R_DS(on), avalanche ruggedness, and thermal reliability are critical.

FAQ

What is the maximum allowable gate-source voltage for IPB80N04S303ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive is +10 V for full enhancement and minimal R_DS(on), with fast fall-time (<50 ns) to avoid Miller-induced false turn-on during switching transitions.

Is IPB80N04S303ATMA1 suitable for synchronous rectification in a 48 V buck converter?

Yes. Its low R_DS(on) (2.5 mΩ typ.), fast body diode (t_rr = 46 ns), and low Q_rr (73 nC) make it well-suited for synchronous rectification at 48 V input and up to 80 A output. Layout must minimize source inductance and ensure Kelvin source connection for accurate gate drive referencing.

How does the thermal resistance R_thJC = 0.8 K/W translate to practical PCB layout requirements?

This value assumes direct thermal coupling between the exposed drain pad and a ≥6 cm² copper area on 1.5 mm FR4 PCB, vertically mounted in still air. To achieve rated 80 A continuous current, the PCB copper must be solid (70 µm thick), unbroken, and thermally connected to a heatsink or ambient airflow path-otherwise derating to ≤50 A is required.

Does IPB80N04S303ATMA1 require external avalanche protection in motor drive applications?

No. It is 100% factory-tested for single-pulse avalanche energy (E_AS = 526 mJ at 80 A), making external clamping diodes unnecessary for typical inductive load switching. However, repetitive avalanche operation is not guaranteed and should be avoided through proper snubber design and layout.

IPB80N04S303ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S303ATMA1 FAQ

1.How can I place an order for IPB80N04S303ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S303ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S303ATMA1 reliable?

The price and inventory of IPB80N04S303ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S303ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S303ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S303ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S303ATMA1?

IPB80N04S303ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S303ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S303ATMA1?

For technical support, including IPB80N04S303ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S303ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S303ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S303ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S303ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S303ATMA1?

All IPB80N04S303ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S303ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S303ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S303ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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