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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S304ATMA1

Name: IPB80N04S304ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S304ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S304ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S304ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB80N04S304ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 3.2–3.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, with 100% single-pulse avalanche energy rating of 290 mJ. It operates up to 175 °C and is used in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPB80N04S304ATMA1 datasheet, IPB80N04S304ATMA1 pinout, IPB80N04S304ATMA1 application, or IPB80N04S304ATMA1 equivalent, key selection criteria include R_DS(on) at 100 °C junction temperature, thermal resistance R_thJC = 1.1 K/W, avalanche ruggedness, gate charge Q_g = 60–80 nC, and AEC-Q101 qualification status.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with standard 5 V and 10 V controllers, while its 175 °C maximum operating temperature supports under-hood deployment without derating.

The integrated body diode exhibits t_rr = 35 ns and Q_rr = 35 nC at T_j = 25 °C, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is anchored by a low R_thJC of 1.1 K/W, enabling high-power density PCB layouts with minimal copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V nominal automotive battery systems including load dump transients.
R_DS(on) max	3.8 mΩ at V_GS = 10 V, I_D = 80 A, T_j = 25 °C - Enables <1 W conduction loss at 80 A, critical for thermally constrained modules.
I_D continuous	80 A at T_C = 100 °C - Sustains full-rated current in hot under-hood environments without external heatsink derating.
E_AS	290 mJ - Confirmed single-pulse avalanche energy ensures robustness against inductive switching faults in motor drives.
Q_g	60–80 nC - Defines gate drive power requirement and switching speed trade-off in PWM applications above 20 kHz.
t_r/t_f	12 ns / 10 ns - Supports fast turn-on/turn-off transitions, reducing switching losses in high-frequency DC-DC converters.
T_j max	175 °C - Allows operation in engine compartment locations where ambient exceeds 125 °C, per AEC-Q101 stress testing.

Pinout & Package

IPB80N04S304ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal anchoring. The package features gull-wing leads and RoHS-compliant green molding compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt; electrically tied to exposed metal pad on bottom side.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <80 nC total charge; sensitive to ESD; must be driven with controlled slew rate.
Pin 3 (Drain)	Power output	High-current drain connection; internally bonded to large copper clip; requires direct thermal via to inner-layer copper pour.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at I_D = 80 A, ensuring field reliability in inductive fault conditions.
R_thJC = 1.1 K/W	Enables >130 W power dissipation with modest heatsinking-supports compact 12 V/80 A switch-mode power supplies.
MSL1 rating	Compatible with lead-free reflow profiles up to 260 °C peak, eliminating moisture sensitivity concerns during SMT assembly.
Integrated body diode	Optimized for low Q_rr (35 nC) and V_SD (0.95 V typ), reducing reverse recovery loss in synchronous buck and half-bridge configurations.

Applications

Engine Control Unit (ECU) High-Side Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: Driving solenoid valves and fuel injectors in gasoline/diesel engine management systems.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch controlling 12 V loads with fast turn-on (<12 ns) and avalanche-safe turn-off.

Use Value: Eliminates need for external flyback diodes due to rugged body diode and 290 mJ E_AS, reducing BOM count and PCB area.

Use Scenario: Primary-side switching element in 12 V to 5 V/3.3 V step-down converters for ADAS camera modules and infotainment ECUs.

IC Role / Device Role / Timing Role: Low-R_DS(on) power FET delivering 80 A continuous current with minimal conduction loss at 100 °C case temperature.

Use Value: Achieves >95% efficiency at 200 kHz switching frequency due to low Q_g (60–80 nC) and fast t_r/t_f.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) Auxiliary DC-DC Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving 12 V EPS assist motors.

IC Role / Device Role / Timing Role: Low-loss, high-temperature MOSFET handling bidirectional current with integrated freewheeling diode.

Use Value: Enables compact inverter design with 175 °C T_j rating and 35 ns t_rr, minimizing dead-time losses and thermal margin overhead.

Use Scenario: Isolated auxiliary supply stage converting high-voltage battery output to 12 V for OBC control circuitry.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter operating across wide input range (up to 450 V reflected).

Use Value: Withstands repetitive avalanche events during startup and overload, verified by 100% production screening per AEC-Q101.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S3-04	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (no PCB copper); no MSL1 reflow rating.	Suitable for prototyping or low-volume industrial power supplies where manual soldering is acceptable.	Select when mechanical mounting stability outweighs thermal performance and automated assembly is not required.
IPI80N04S3-04	Same die, TO-262-3-1 (I²PAK) package; identical R_thJC but larger footprint; MSL1 rated.	Better suited for medium-volume production with wave soldering or selective reflow; less PCB space-efficient than D²PAK.	Choose when board-level thermal constraints allow larger package and cost-per-unit favors I²PAK tooling.

Compared with IPP80N04S3-04 and IPI80N04S3-04, IPB80N04S304ATMA1 delivers superior thermal performance in surface-mount designs (R_thJC = 1.1 K/W) and highest assembly flexibility (MSL1 + D²PAK), making it optimal for high-density automotive power modules.

Availability

IPB80N04S304ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering inverters, on-board charger auxiliary supplies, and 12 V DC-DC converters requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPB80N04S304ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-temperature automotive power switching applications demanding AEC-Q101 compliance and avalanche ruggedness.

FAQ

What is the maximum allowable gate-source voltage for IPB80N04S304ATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching or inductive coupling.

Does IPB80N04S304ATMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to control dV/dt and suppress oscillation. For 80 A switching at 200 kHz, a 3.5 Ω resistor is validated in Infineon's ANPS071E; values between 2.2 Ω and 10 Ω balance switching speed, EMI, and gate driver stress depending on layout parasitics.

How does the R_DS(on) change over temperature, and what is its value at 175 °C?

R_DS(on) increases linearly with junction temperature. At 175 °C, it reaches approximately 7.2 mΩ (typical), based on the R_DS(on) vs. T_j curve on page 5 of the datasheet. This doubling from room temperature must be accounted for in worst-case conduction loss calculations.

Is IPB80N04S304ATMA1 suitable for synchronous rectification in a buck converter?

Yes-the integrated body diode has t_rr = 35 ns and Q_rr = 35 nC at 25 °C, enabling efficient synchronous operation up to ~300 kHz. However, external Schottky diodes may be preferred above 500 kHz due to lower Q_rr and faster recovery.

IPB80N04S304ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S304ATMA1 FAQ

1.How can I place an order for IPB80N04S304ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S304ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S304ATMA1 reliable?

The price and inventory of IPB80N04S304ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S304ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S304ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S304ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S304ATMA1?

IPB80N04S304ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S304ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S304ATMA1?

For technical support, including IPB80N04S304ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S304ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S304ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S304ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S304ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S304ATMA1?

All IPB80N04S304ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S304ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S304ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S304ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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