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Infineon Technologies IPB80N04S3H4ATMA1

Name: IPB80N04S3H4ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S3H4ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S3H4ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S3H4ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB80N04S3H4ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 4.5 mΩ max R_DS(on) at 10 V V_GS, 80 A continuous drain current, and 175 °C operating temperature-designed for high-efficiency automotive DC-DC converters and motor control stages.

For engineers reviewing the IPB80N04S3H4ATMA1 datasheet, IPB80N04S3H4ATMA1 pinout, IPB80N04S3H4ATMA1 application, or IPB80N04S3H4ATMA1 equivalent, key selection criteria include avalanche ruggedness (370 mJ), gate charge profile (Q_g = 46–60 nC), thermal resistance (R_thJC = 1.3 K/W), and SMD-compatible thermal performance on 6 cm² PCB copper.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with controlled EMI. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with 3.3 V and 5 V logic controllers, while its 100% avalanche-tested design supports unclamped inductive switching in automotive load-dump and motor freewheeling scenarios.

The integrated body diode features low forward voltage (V_SD = 0.95–1.3 V @ 80 A) and fast reverse recovery (t_rr = 35 ns, Q_rr = 35 nC), enabling efficient synchronous rectification and bidirectional power flow in 12 V/48 V hybrid systems without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports 12 V automotive battery systems with margin against load-dump transients up to 40 V.
R_DS(on) max	4.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 80 A, critical for thermally constrained SMD layouts.
I_D continuous	80 A @ T_C = 100 °C - Sustains full-rated current under hood temperatures without derating in TO263-3-2 footprint.
E_AS	370 mJ - Withstands single-pulse inductive energy from 40 A loads, eliminating need for external snubbers in solenoid drivers.
Q_g	46–60 nC - Optimized for gate driver ICs with 1–2 A peak output; enables <50 ns turn-on delay with 3.5 Ω gate resistor.
t_rr / Q_rr	35 ns / 35 nC - Reduces diode recovery loss and voltage overshoot during hard commutation in half-bridge topologies.
R_thJC	1.3 K/W - Allows direct heatsink mounting via drain pad; enables 115 W power dissipation at 25 °C case temperature.

Pinout & Package

IPB80N04S3H4ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; threshold range (2.1–4.0 V) ensures reliable turn-on across temperature and process variation.
Pin 2 (Source)	Reference node	Serves as return path for gate drive and load current; must be low-inductance connection to minimize switching oscillation.
Pin 3 (Drain)	Main power terminal	Exposed copper tab forms primary thermal path to PCB; electrically connects to high-side switch node or motor phase output.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per JESD22-A108.
100% avalanche tested	Each unit passes single-pulse E_AS stress test at 370 mJ, ensuring field reliability in inductive switching applications.
Green RoHS-compliant package	Halogen-free, lead-free PG-TO263-3-2 meets ELV Directive and IPC-J-STD-020 MSL1 reflow profile (260 °C peak).
Optimized body diode	V_SD = 0.95 V typ @ 80 A enables efficient freewheeling in H-bridge motor drives without external diode parallel.
Thermal robustness	Rated for continuous operation up to 175 °C junction temperature, supporting compact packaging in engine control units.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: 12 V to 5 V/3.3 V buck conversion in vehicle infotainment and ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300–500 kHz switching frequency.

Use Value: Low R_DS(on) (4.5 mΩ) reduces conduction loss by >40% vs. legacy 6 mΩ devices, improving efficiency from 92% to 94.5% at 25 A load.

Use Scenario: Three-phase inverter driving 12 V brushed or brushless EPS assist motors.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-controlled H-bridge with regenerative braking capability.

Use Value: Fast t_rr (35 ns) and low Q_rr (35 nC) suppress voltage spikes during current reversal, eliminating need for active clamp circuits.

Start-Stop Battery Management

12 V Auxiliary Power Modules

Use Scenario: Load-switching and reverse-polarity protection in smart battery junction boxes.

IC Role / Device Role / Timing Role: High-current eFuse replacement with programmable current limiting and short-circuit protection.

Use Value: Avalanche ruggedness (370 mJ) sustains repeated fault events during cold-cranking transients without degradation.

Use Scenario: High-efficiency 12 V auxiliary supply for telematics and connectivity modules in EVs.

IC Role / Device Role / Timing Role: Primary switch in interleaved buck converter delivering 15 A at 95% efficiency.

Use Value: R_thJC = 1.3 K/W enables direct heatsink attachment on compact PCB, reducing thermal solution volume by 35% vs. TO-220 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S3H4AKSA1	Same die, PG-TO220-3-1 through-hole package; R_thJC = 1.3 K/W but higher R_thJA (62 K/W) in still air.	Better suited for prototyping or low-volume assemblies where manual soldering is preferred over SMD reflow.	Select when board-level thermal management is less constrained and mechanical mounting stability is prioritized over footprint size.
IPB80N04S4-04	Newer generation with lower R_DS(on) (3.4 mΩ typ), higher Q_g (72 nC), and same AEC-Q101 rating.	Delivers improved conduction efficiency but requires stronger gate drive due to higher total charge.	Choose for new designs targeting <0.8 W conduction loss at 80 A, provided gate driver can source ≥2 A peak current.

Compared with IPP80N04S3H4AKSA1, IPB80N04S3H4ATMA1 offers superior thermal performance in automated SMD assembly; versus IPB80N04S4-04, it trades 0.7 mΩ higher R_DS(on) for 12 nC lower Q_g, easing gate drive design in cost-sensitive automotive ECUs.

Availability

IPB80N04S3H4ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and start-stop battery management requiring stable component supply and AEC-Q101 compliance.

Supply support for IPB80N04S3H4ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T family of trench-MOSFETs engineered specifically for high-current, high-reliability automotive power stages-including DC-DC converters, motor drives, and battery protection circuits.

FAQ

What is the maximum allowable gate-source voltage for IPB80N04S3H4ATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent transient overshoot during fast switching or inductive coupling.

Can IPB80N04S3H4ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C) enables natural current sharing. For stable parallel operation, match gate resistors within ±5%, ensure symmetrical PCB layout, and maintain ≤2 °C junction temperature difference between devices using thermal vias under each drain pad.

Is the body diode suitable for continuous reverse conduction?

The integrated body diode supports continuous forward current up to 80 A at T_C = 100 °C, matching the MOSFET's I_D rating. However, its V_SD (0.95–1.3 V) is higher than discrete Schottky diodes, so sustained reverse conduction should be verified for thermal impact in high-duty-cycle freewheeling applications.

Does IPB80N04S3H4ATMA1 require special PCB layout considerations?

Yes-the exposed drain pad must be connected to ≥6 cm² of 70 µm thick copper on inner or outer layer, with ≥8 thermal vias (0.3 mm diameter) to internal ground planes. Gate trace length should be minimized (<5 mm), and a 10 nF ceramic capacitor must be placed between source and gate driver ground to suppress ringing during hard switching.

IPB80N04S3H4ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 65µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S3H4ATMA1 FAQ

1.How can I place an order for IPB80N04S3H4ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S3H4ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S3H4ATMA1 reliable?

The price and inventory of IPB80N04S3H4ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S3H4ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S3H4ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S3H4ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S3H4ATMA1?

IPB80N04S3H4ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S3H4ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S3H4ATMA1?

For technical support, including IPB80N04S3H4ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S3H4ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S3H4ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S3H4ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S3H4ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S3H4ATMA1?

All IPB80N04S3H4ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S3H4ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S3H4ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S3H4ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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