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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S205ATMA1

Name: IPB80N06S205ATMA1
Brand: Infineon Technologies
SKU: IPB80N06S205ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S205ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S205ATMA1.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Inventory:6,459

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Product details

Overview

IPB80N06S205ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified OptiMOS™ power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 4.8 mΩ max R_DS(on) at 10 V V_GS, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - deployed in high-efficiency DC-DC converters for 12 V automotive subsystems.

For engineers reviewing the IPB80N06S205ATMA1 datasheet, IPB80N06S205ATMA1 pinout, IPB80N06S205ATMA1 application, or IPB80N06S205ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 0.5 K/W R_thJC, 100% avalanche-tested ruggedness, and SMD-compatible TO263 footprint for thermally demanding motor control and battery management stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in unidirectional high-current paths. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.2 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 60–75 ns reverse recovery time under 100 A/µs di/dt, making it suitable for synchronous rectification and freewheeling in buck and half-bridge topologies where reverse recovery charge (130–160 nC) must be minimized to reduce switching loss and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V automotive systems with load dump margin
R_DS(on) max	4.8 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for thermal management in compact modules
I_D continuous	80 A at T_C = 25 °C - Supported by 0.5 K/W junction-to-case thermal resistance for direct heatsink mounting
E_AS	810 mJ single-pulse avalanche energy - Confirmed ruggedness for inductive turn-off stress without external snubbers
Q_g total	130–170 nC - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz SMPS
t_r/t_f	21 ns / 20 ns - Supports fast edge rates while maintaining EMI compliance when paired with optimized gate resistance
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic drivers without level-shifting

Pinout & Package

IPB80N06S205ATMA1 uses the PG-TO263-3-2 surface-mount package with exposed drain pad for low-inductance, high-current routing and enhanced thermal dissipation. The package complies with MSL1 reflow profile (peak 260 °C) and features green (lead-free) finish.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path with minimal loop inductance
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <170 nC charge; sensitive to ESD and layout-induced ringing
Pin 3 (Drain)	Power output / high-side connection	Exposed copper pad on underside - must be soldered to large copper area (≥6 cm²) for thermal performance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, HTRB
Ultra-low R_DS(on)	Typical 3.8 mΩ in SMD version - reduces I²R losses by >25% vs. legacy 6.5 mΩ devices at same current
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 810 mJ - eliminates field failure risk in inductive switching
175 °C operation	Rated junction temperature allows use in engine bay environments without derating below 125 °C ambient
Green package	Lead-free, RoHS-compliant construction with halogen-free molding compound per JEDEC J-STD-020

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Motor Drivers

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for ADAS sensors and microcontrollers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–400 kHz with zero-voltage switching assist.

Use Value: 4.8 mΩ R_DS(on) limits conduction loss to <0.3 W at 30 A, enabling >95% efficiency in compact 2-layer PCB designs.

Use Scenario: Half-bridge leg in 12 V EPS motor phase control with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 80 A peak motor current and regenerative braking energy.

Use Value: 810 mJ avalanche rating absorbs inductive kickback during rapid PWM shutdown without external clamping diodes.

On-Board Charger (OBC) Auxiliary Supplies

Battery Management System (BMS) Precharge Circuits

Use Scenario: Isolated auxiliary supply powering gate drivers and communication ICs in 3.3 kW OBC modules.

IC Role / Device Role / Timing Role: Primary-side active clamp switch in resonant LLC topology with 500 kHz fundamental frequency.

Use Value: 5.2 V gate plateau ensures clean Miller plateau transition, reducing shoot-through risk during high-dV/dt operation.

Use Scenario: Controlled precharge path between high-voltage battery pack and main contactor in EV traction systems.

IC Role / Device Role / Timing Role: Soft-start switch limiting inrush current to <5 A during capacitor bank charging.

Use Value: 175 °C T_j rating permits sustained 80 A precharge pulses without thermal shutdown in sealed BMS enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2-05	Identical die, but in through-hole PG-TO220-3-1 package; R_thJA = 62 K/W (vs. 40 K/W on 6 cm² PCB for IPB80N06S205ATMA1)	Suitable for prototyping or lower-power designs where heatsinking is via clip-on fin rather than PCB copper	Select IPP80N06S2-05 when mechanical mounting constraints prohibit SMD assembly or when manual rework is required.
IPB80N06S4-03	Newer OptiMOS™ 4 generation; 3.3 mΩ R_DS(on) max, 150 nC Q_g, same 55 V rating and AEC-Q101 qualification	Enables higher efficiency in space-constrained 48 V mild-hybrid DC-DC converters where <3 mΩ is mandatory	Choose IPB80N06S4-03 only if system-level efficiency gain justifies higher gate drive power and cost premium.

Compared with IPP80N06S2-05, IPB80N06S205ATMA1 offers superior thermal performance in automated SMT production; versus IPB80N06S4-03, it trades 1.5 mΩ higher R_DS(on) for proven field reliability and lower gate charge drive complexity in 12 V legacy architectures.

Availability

IPB80N06S205ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering motor drivers, and battery management system precharge circuits requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80N06S205ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 2nd-generation power MOSFET product line, engineered specifically for high-current, high-reliability 12 V automotive power conversion where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S205ATMA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operation beyond this range risks irreversible gate oxide damage. Recommended drive is 10 V for full enhancement, with minimum 5 V to ensure robust turn-on across temperature and process variation.

Does IPB80N06S205ATMA1 require a gate resistor, and what value is typical?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. Typical values range from 2.2 Ω to 10 Ω depending on switching frequency and driver capability. At 250 kHz in a buck converter, 4.7 Ω balances switching speed (t_r/t_f ≈ 20 ns) and gate driver stress (I_peak ≈ 2.1 A).

Can IPB80N06S205ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with T_j) enables inherent current sharing. Layout symmetry, matched gate drive paths, and shared thermal mass are essential. Derate total current by 15% versus sum of individual ratings to account for dynamic imbalance at turn-on.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 80 A continuous forward current at T_C = 25 °C and exhibits 0.9–1.3 V V_SD at 80 A. However, for optimal efficiency above 10 A, external Schottky or MOSFET synchronous rectifiers are preferred due to lower forward drop and absence of reverse recovery charge.

IPB80N06S205ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S205ATMA1 FAQ

1.How can I place an order for IPB80N06S205ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S205ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S205ATMA1 reliable?

The price and inventory of IPB80N06S205ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S205ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N06S205ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S205ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S205ATMA1?

IPB80N06S205ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S205ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S205ATMA1?

For technical support, including IPB80N06S205ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S205ATMA1 requirements.

6.How does Aetrix verify that IPB80N06S205ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S205ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S205ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N06S205ATMA1?

All IPB80N06S205ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S205ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S205ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N06S205ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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