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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S208ATMA1

Name: IPB80N06S208ATMA1
Brand: Infineon Technologies
SKU: IPB80N06S208ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S208ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S208ATMA1.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S208ATMA1 from Infineon is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 7.7 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche energy (450 mJ), operates up to 175 °C junction temperature, and is used in automotive DC-DC converters and high-current motor control stages.

For engineers reviewing the IPB80N06S208ATMA1 datasheet, IPB80N06S208ATMA1 pinout, IPB80N06S208ATMA1 application, or IPB80N06S208ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V drive, thermal resistance (R_thJC = 0.7 K/W), avalanche ruggedness, AEC-Q101 qualification status, and TO263-2 footprint compatibility with PCB cooling area design.

Technical Context

This OptiMOS® power transistor uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while its 190 pF reverse transfer capacitance (Crss) supports controlled dV/dt during hard-switching.

The device integrates a co-packaged body diode with 0.9–1.3 V forward voltage at 80 A and 55–70 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drives without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal automotive battery systems and 12 V/24 V rail protection.
R_DS(on) max	7.7 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 80 A, critical for thermally constrained under-hood modules.
I_D cont	80 A @ T_C = 25 °C - Sustains full load current in high-power DC-DC stages without derating when mounted on ≥6 cm² copper area.
E_AS	450 mJ - Withstands single-pulse inductive energy from 80 A loads, eliminating need for external snubbers in solenoid or relay drivers.
R_thJC	0.7 K/W - Allows direct thermal path from die to heatsink, supporting >200 W power dissipation with modest heatsinking.
Q_g total	96 nC - Determines gate driver strength requirement; compatible with standard 2 A peak drivers for ≤100 kHz switching.
t_r/t_f	15 ns / 14 ns - Supports efficient hard-switching at 100–200 kHz in compact power supplies without excessive EMI.

Pinout & Package

IPB80N06S208ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The three terminals are arranged in linear configuration: Pin 1 (Source), Pin 2 (Gate), Pin 3 (Drain). Drain connects directly to the exposed metal pad for low-inductance, high-current routing and thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to low-side return path; requires low-impedance ground plane routing.
Pin 2 (Gate)	Control electrode	High-impedance input requiring RC snubber or gate resistor (3.3 Ω typical) to damp ringing and limit dI/dt.
Pin 3 (Drain)	Main current-carrying terminal	Exposed copper pad tied to internal die drain; must be soldered to ≥6 cm² PCB copper area for thermal and current handling.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per Rev G requirements.
MSL1 rating	Reflow-compatible up to 260 °C peak, enabling standard lead-free SMT assembly without moisture sensitivity concerns.
100% avalanche tested	Each unit undergoes single-pulse E_AS stress test at production, ensuring guaranteed ruggedness in inductive load switching.
Green package	Lead-free and RoHS-compliant construction with halogen-free molding compound, meeting automotive ELV Directive requirements.
Optimized Crss/Ciss ratio	190 pF Crss vs. 2860 pF Ciss yields low Miller effect, improving gate drive efficiency and reducing switching losses at high dV/dt.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Motor Drivers

Use Scenario: Step-down conversion from 48 V or 12 V battery to 5 V/3.3 V MCU rails in ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with forced PWM control.

Use Value: 7.7 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 12 mΩ parts, enabling smaller heatsinks and higher power density.

Use Scenario: Low-side switching in three-phase H-bridge driving 12 V brushed or BLDC assist motors.

IC Role / Device Role / Timing Role: Fast-turning low-side MOSFET with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 55 ns t_rr and 85 nC Q_rr minimize diode recovery loss and EMI, improving system efficiency by ~2.1% at 10 kW peak output.

12 V Starter-Generator Systems

Commercial Vehicle LED Headlamp Drivers

Use Scenario: Bidirectional power flow control in 12 V belt-driven starter-generators with regenerative braking.

IC Role / Device Role / Timing Role: Main switching element in dual-active-bridge topology handling 80 A continuous bidirectional current.

Use Value: 175 °C T_j rating and 0.7 K/W R_thJC allow operation in sealed enclosures without active cooling, reducing system BOM cost.

Use Scenario: Constant-current dimming and short-circuit protection for 60 W LED arrays in headlamps.

IC Role / Device Role / Timing Role: High-side current-limiting switch activated during overcurrent fault detection.

Use Value: 450 mJ E_AS withstands lamp cold-resistance surge (up to 10× nominal current), eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2-08	Same die, PG-TO220-3-1 through-hole package; R_thJA = 62 K/W (no PCB copper benefit); no MSL1 reflow rating.	Suitable for prototyping or non-automotive industrial boards where manual assembly and larger heatsinks are acceptable.	Select when through-hole mounting, lower volume, or legacy board compatibility is required over SMT scalability.
IPI80N06S2-08	Same die, PG-TO262-3-1 (I2PAK) package; R_thJC identical but leads limit current handling; not AEC-Q101 certified.	Used in cost-sensitive industrial motor drives where automotive qualification is unnecessary.	Choose for non-automotive applications needing similar R_DS(on) but lower procurement cost and simpler assembly than D²PAK.

Compared with IPP80N06S2-08 and IPI80N06S2-08, IPB80N06S208ATMA1 provides superior thermal performance via PCB-integrated heatsinking, guaranteed AEC-Q101 compliance, and MSL1 reflow readiness-making it the only choice for volume automotive SMT production.

Availability

IPB80N06S208ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering systems, and commercial vehicle lighting requiring stable component supply across extended temperature and lifecycle demands.

Supply support for IPB80N06S208ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability 12 V and 48 V automotive power systems demanding low R_DS(on), ruggedness, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S208ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, avoiding transient overshoot via proper layout and gate resistor selection.

Does IPB80N06S208ATMA1 require a gate resistor, and if so, what value is recommended?

Yes, a series gate resistor is required to control dV/dt and prevent oscillation. Infineon recommends 3.3 Ω for 100 kHz switching with a 2 A peak gate driver, based on measured t_d(on)/t_d(off) and Crss values. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses. Layout parasitics must be minimized regardless of resistor value.

Can IPB80N06S208ATMA1 be used in parallel configurations?

Yes, it supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing above 100 °C. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derating to 70% of total rated current per device is advised, and thermal coupling between devices must be minimized to avoid thermal runaway.

Is the body diode in IPB80N06S208ATMA1 suitable for synchronous rectification?

Yes-the integrated body diode has 55–70 ns t_rr and 85–110 nC Q_rr, making it viable for synchronous rectification in buck converters up to 200 kHz. However, for optimal efficiency, external Schottky diodes or dedicated synchronous MOSFETs are preferred above 150 kHz due to lower Q_rr and V_SD trade-offs.

IPB80N06S208ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.7mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 215W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S208ATMA1 FAQ

1.How can I place an order for IPB80N06S208ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S208ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S208ATMA1 reliable?

The price and inventory of IPB80N06S208ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S208ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N06S208ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S208ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S208ATMA1?

IPB80N06S208ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S208ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S208ATMA1?

For technical support, including IPB80N06S208ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S208ATMA1 requirements.

6.How does Aetrix verify that IPB80N06S208ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S208ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S208ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N06S208ATMA1?

All IPB80N06S208ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S208ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S208ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N06S208ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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