Infineon Technologies IPB80N06S209ATMA1

Overview

IPB80N06S209ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 7.6–9.1 mΩ R_DS(on) at V_GS = 10 V. It is 100% avalanche tested and qualified to AEC-Q101 for use in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPB80N06S209ATMA1 datasheet, IPB80N06S209ATMA1 pinout, IPB80N06S209ATMA1 application, or IPB80N06S209ATMA1 equivalent, key selection criteria include its 0.8 K/W junction-to-case thermal resistance, 370 mJ single-pulse avalanche energy, 175 °C maximum operating temperature, and SMD-compatible TO263 footprint for high-power automotive power stages.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with standard 5 V and 10 V controllers, while its 2360 pF input capacitance and 150 pF reverse transfer capacitance support fast, controlled switching at up to 100 kHz in synchronous rectification.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 50–63 ns reverse recovery time, enabling efficient freewheeling in half-bridge configurations. Thermal design is anchored by a validated 0.8 K/W R_thJC, allowing sustained 80 A operation with minimal heatsink area when mounted on 6 cm² copper.

Key Specifications

Pinout & Package

IPB80N06S209ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated tab. The drain is connected to the large exposed copper pad on the underside; source and gate are accessible via gull-wing leads on the front side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S2-09, IPB80N06S209ATMA1 offers superior thermal performance in automated SMT lines and tighter board-level integration; versus IPB80N06S4-05, it trades 1.6 mΩ higher R_DS(on) for 5 V higher V_DS margin and proven field reliability in AEC-Q101-critical functions.

Availability

IPB80N06S209ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and 12 V DC-DC converters requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPB80N06S209ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd-generation power transistor product line, engineered specifically for high-current, high-reliability automotive power conversion and load switching applications demanding AEC-Q101 compliance and robust thermal behavior.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +175 °C, and the device is fully specified for operation across –55 °C to +175 °C. Derating curves in the datasheet show that at T_C = 100 °C, continuous drain current remains 80 A with V_GS ≥ 10 V-confirming full-rated performance even in hot under-hood environments.

Is IPB80N06S209ATMA1 suitable for synchronous rectification in a 48 V input DC-DC converter?

No-its 55 V V_DS rating provides only 7 V margin above 48 V nominal input, which is insufficient for transients and safety margins. It is designed for 12 V/24 V automotive systems (e.g., ECU, EPS, HVAC). For 48 V applications, consider Infineon's 75 V or 100 V OptiMOS variants like IPB120N04S4-02.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor (typically 2.2–10 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Without it, parasitic inductance can cause gate oscillation exceeding ±20 V rating, risking premature failure. Layout best practices also mandate short, low-inductance gate traces and local decoupling.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.9–1.3 V at 80 A and t_rr = 50–63 ns-higher forward drop than Schottky diodes but far more rugged and integrated. It eliminates external component count and layout complexity in half-bridge freewheeling paths, though discrete Schottky may be preferred where <0.5 V forward drop is mandatory at high frequency.