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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S2H5ATMA1

Name: IPB80N06S2H5ATMA1
Brand: Infineon Technologies
SKU: IPB80N06S2H5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2H5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2H5ATMA1.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2H5ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 4.6 mΩ typical R_DS(on) at V_GS = 10 V. It is 100% avalanche tested, AEC-Q101 qualified, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of electric power steering (EPS) systems.

For engineers reviewing the IPB80N06S2H5ATMA1 datasheet, IPB80N06S2H5ATMA1 pinout, IPB80N06S2H5ATMA1 application, or IPB80N06S2H5ATMA1 equivalent, key selection criteria include its 0.5 K/W junction-to-case thermal resistance, 116–155 nC total gate charge, 4400 pF input capacitance, and integrated body diode with 60–75 ns reverse recovery time under 100 A/µs di/dt.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) ensures robust noise immunity while enabling fast turn-on with a 5.1 V gate plateau voltage and 23 ns turn-on delay.

The MOSFET integrates a co-packaged freewheeling diode with 0.9–1.3 V forward voltage at 80 A and 25 °C, supporting synchronous rectification and regenerative braking. Thermal design is enabled by MSL1 reflow compatibility (260 °C peak) and validated 6 cm² PCB copper cooling performance yielding 40 K/W R_thJA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal automotive battery architectures and transient overvoltage tolerance.
R_DS(on) typ.	4.6 mΩ @ V_GS=10 V, I_D=80 A - Enables <1 W conduction loss at 80 A, critical for thermally constrained EPS and HVAC blower modules.
I_D cont.	80 A @ T_C=25 °C - Sustains full-load current without derating in heatsink-mounted configurations per JEDEC standard mounting.
E_AS	700 mJ single-pulse - Withstands inductive energy from motor windings during fault shutdown without failure.
Q_g	116–155 nC - Determines gate driver power requirement and switching speed; supports 100 kHz+ PWM in buck converters.
t_r/t_f	23 ns / 22 ns - Enables fast edge transitions to minimize switching losses and EMI generation in high-frequency inverters.
V_SD	0.9–1.3 V @ I_F=80 A - Low forward drop reduces freewheeling loss versus external Schottky diodes in half-bridge topologies.

Pinout & Package

IPB80N06S2H5ATMA1 is housed in PG-TO263-3-2 (D²PAK), a surface-mount power package with isolated drain tab for PCB thermal management. The three terminals are arranged in standard TO263 layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; requires ≤155 nC charge to fully enhance channel; sensitive to ESD (±20 V max).
Pin 2 (Drain)	High-side power terminal	Exposed copper tab - must be soldered to ≥6 cm² PCB copper pour for thermal performance; carries full load current and avalanche energy.
Pin 3 (Source)	Reference node	Common return path for gate drive and load current; connects to ground plane or low-side switch source in half-bridge.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood use including temperature cycling, humidity bias, and mechanical shock per stress test requirements.
100% unclamped inductive switching (UIS) tested	Each unit passes single-pulse avalanche stress at 700 mJ, ensuring field reliability in motor commutation faults.
MSL1 reflow rating	Suitable for lead-free assembly at 260 °C peak without delamination or parameter shift - eliminates post-solder retest.
Green package	Lead-free and RoHS-compliant; halogen-free epoxy molding compound meets automotive environmental compliance standards.
Optimized dynamic parameters	C_iss/C_oss/C_rss ratio (4400/1100/280 pF) balances switching speed and voltage overshoot in hard-switched topologies.

Applications

Electric Power Steering (EPS)

Automotive HVAC Blower

Use Scenario: High-efficiency 3-phase inverter driving brushless DC motor in column-assist EPS module.

IC Role / Device Role / Timing Role: Low-side switching element in each phase leg; synchronized via PWM with dead-time control to prevent shoot-through.

Use Value: 4.6 mΩ R_DS(on) minimizes I²R heating in confined space; 175 °C operation sustains torque assist during extended stop-and-go driving.

Use Scenario: Single-phase H-bridge controlling brushed DC fan motor in climate control system.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch enabling forward/reverse airflow direction and soft-start ramping.

Use Value: Integrated body diode enables regenerative braking during direction reversal; 320 A pulsed rating handles startup surge without external snubbers.

12 V DC-DC Converter

Start-Stop Battery Management

Use Scenario: Synchronous rectifier in secondary side of 12 V/48 V bidirectional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven complementary to primary-side switch with precise timing alignment.

Use Value: 0.9 V V_SD and low Q_rr (130–163 nC) reduce conduction and recovery losses, improving efficiency above 95% at 50 A output.

Use Scenario: Load dump protection and battery isolation switch in intelligent battery sensor (IBS) subsystem.

IC Role / Device Role / Timing Role: High-current solid-state relay replacing electromechanical contactor; controlled via CAN-linked microcontroller.

Use Value: 55 V V_DS withstands ISO 7637-2 pulse 5a (up to 60 V); 80 A rating supports 1 kW auxiliary loads during engine cranking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2H5XTMA1	Same die, PG-TO220-3-1 package; higher R_thJA (62 K/W vs 40 K/W on PCB); no exposed drain tab for soldering.	Better suited for through-hole prototyping or lower-power (<40 A) applications where heatsink mounting is preferred over PCB copper cooling.	Select when mechanical mounting flexibility outweighs thermal performance; not recommended for space-constrained SMT designs requiring >50 A continuous current.
IPB100N04S4H5ATMA1	40 V V_DS, 100 A rating, 3.0 mΩ R_DS(on); smaller die size but higher current density; same AEC-Q101 and MSL1 rating.	Optimized for 12 V-only systems (e.g., ADAS camera power supplies) where 40 V blocking suffices and lower R_DS(on) justifies tighter thermal margin.	Choose for new 12 V designs needing higher current headroom and lower conduction loss; avoid in 48 V or load-dump-prone circuits due to reduced voltage margin.

Compared with IPP80N06S2H5XTMA1, IPB80N06S2H5ATMA1 delivers superior PCB-level thermal performance and higher power density; versus IPB100N04S4H5ATMA1, it trades 15 V blocking margin for broader system voltage compatibility at modest R_DS(on) penalty.

Availability

IPB80N06S2H5ATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive HVAC blowers, and 12 V/48 V DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80N06S2H5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 60 V product line, engineered specifically for high-current, high-reliability switching in automotive 12 V and 48 V electrical architectures - emphasizing low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S2H5ATMA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with minimum 5.1 V gate plateau voltage required to sustain 80 A drain current.

Does IPB80N06S2H5ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithically integrated fast-recovery body diode rated for 80 A continuous forward current and 320 A pulsed current. Key specs include 0.9–1.3 V forward voltage at 80 A/25 °C, 60–75 ns reverse recovery time, and 130–163 nC reverse recovery charge under standardized 100 A/µs di/dt conditions.

How does the thermal resistance of IPB80N06S2H5ATMA1 compare between junction-to-case and junction-to-ambient?

Junction-to-case thermal resistance is fixed at 0.5 K/W, independent of PCB layout. Junction-to-ambient varies: 62 K/W for leaded mounting, 62 K/W on minimal footprint, and 40 K/W on 6 cm² copper area - confirming that PCB copper area directly governs ambient thermal performance in SMT applications.

Is IPB80N06S2H5ATMA1 suitable for use in life-support medical devices?

No - Infineon explicitly restricts use in life-support devices or systems unless expressly approved in writing. This MOSFET is qualified for automotive applications per AEC-Q101, but lacks the process controls, documentation, and validation required for implantable or critical-care medical equipment per ISO 13485 and IEC 62304.

IPB80N06S2H5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2H5ATMA1 FAQ

1.How can I place an order for IPB80N06S2H5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2H5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2H5ATMA1 reliable?

The price and inventory of IPB80N06S2H5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2H5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2H5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2H5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2H5ATMA1?

IPB80N06S2H5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2H5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2H5ATMA1?

For technical support, including IPB80N06S2H5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2H5ATMA1 requirements.

6.How does Aetrix verify that IPB80N06S2H5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2H5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2H5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2H5ATMA1?

All IPB80N06S2H5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2H5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2H5ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N06S2H5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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