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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S2L05ATMA1

Name: IPB80N06S2L05ATMA1
Brand: Infineon Technologies
SKU: IPB80N06S2L05ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2L05ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2L05ATMA1.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2L05ATMA1 from Infineon Technologies is an N-channel Trench MOSFET optimized for high-current DC-DC converters and motor control in automotive and industrial power stages. It features 55 V V_DS, 80 A I_D (T_C = 25°C), R_DS(on) ≤ 5.0 mΩ at V_GS = 10 V, and TO-263-3 (D²PAK) package with enhanced thermal performance. Used in 48 V boardnet motor drives and synchronous rectification.

For engineers reviewing the IPB80N06S2L05ATMA1 datasheet, IPB80N06S2L05ATMA1 pinout, IPB80N06S2L05ATMA1 application, or IPB80N06S2L05ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness rating, gate charge Q_g for PWM switching loss, and SOA compliance in hard-switched topologies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology, delivering low conduction losses and fast switching with integrated body diode recovery time t_rr = 55 ns. Its gate threshold voltage V_GS(th) is 2.0–4.0 V, enabling robust drive compatibility with 3.3 V and 5 V logic-level controllers.

The device supports repetitive avalanche energy E_AS = 470 mJ and is qualified to AEC-Q101 for automotive use. Thermal resistance R_thJC = 1.0 K/W ensures effective heat transfer from junction to case under continuous 80 A operation at T_C = 100°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage for 48 V nominal systems with 20% transient margin.
I_D (T_C = 25°C)	80 A - Continuous drain current rating at heatsink-mounted case temperature, supporting high-power motor phase legs.
R_DS(on) max	5.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 40 A, critical for thermally constrained PCB layouts.
Q_g	95 nC - Total gate charge determining driver strength requirement and turn-on/turn-off timing in 100 kHz PWM stages.
E_AS	470 mJ - Repetitive avalanche energy rating confirming reliability during inductive load switching transients.
t_rr	55 ns - Body diode reverse recovery time enabling efficient synchronous rectification without external Schottky.

Pinout & Package

Package: TO-263-3 (D²PAK), surface-mount, copper-tab exposed for direct heatsink attachment. Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt for closed-loop control.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 Ω series resistor to suppress ringing in fast-switching applications.
Pin 3 (Drain)	Power output / high-side connection	Electrically tied to exposed copper tab; must be isolated from heatsink unless drain-referenced thermal interface used.

Key Features

Feature	Design Value
OptiMOS™ 2nd Gen trench process	Enables 5.0 mΩ R_DS(on) in TO-263 while maintaining >1000-cycle SOA robustness at 80 A.
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications including EPS and HVAC blowers.
Enhanced dv/dt ruggedness	Withstands >50 V/ns transient stress without parasitic turn-on, reducing need for gate clamping circuits.
Low Q_gd/Q_g ratio	0.28 - Improves Miller immunity and enables stable operation with standard gate drivers like 1EDN7512B.

Applications

Automotive EPS Control

Industrial BLDC Motor Drive

Use Scenario: Electric power steering (EPS) module with three-phase inverter driving 400 W brushless motor.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each half-bridge leg, operating at 20–40 kHz PWM frequency.

Use Value: 5.0 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 7.5 mΩ devices, enabling passive cooling in compact EPS housing.

Use Scenario: 1.5 kW industrial fan drive using field-oriented control (FOC) with discrete inverter stage.

IC Role / Device Role / Timing Role: Power switch in 3-phase bridge; gate driven by isolated gate driver IC (e.g., 1EDC60H12AH) with 100 ns propagation delay.

Use Value: 470 mJ E_AS rating eliminates need for external snubbers during emergency stop braking events.

48 V Telecom DC-DC Converter

Synchronous Rectifier in Server PSU

Use Scenario: 1200 W intermediate bus converter stepping 48 V down to 12 V using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET with zero-voltage switching (ZVS) operation.

Use Value: 55 ns t_rr minimizes reverse recovery loss and EMI during hard commutation transitions.

Use Scenario: Secondary-side synchronous rectification in 3 kW server power supply with LLC resonant controller.

IC Role / Device Role / Timing Role: Low-side rectifier switch in center-tapped secondary winding, driven by self-driven gate signal.

Use Value: R_DS(on) ≤ 5.0 mΩ maintains >96% efficiency at full load while limiting junction temperature rise to <85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 110 nC; non-AEC-Q101 rated	Targeted at industrial UPS and solar inverters, not automotive qualified	Select when higher gate charge is acceptable and AEC-Q101 compliance is not required.
IXFH80N06P3	R_DS(on) = 5.8 mΩ @ 10 V; TO-247 package; E_AS = 320 mJ	Designed for high-reliability industrial motor drives with forced-air cooling	Choose for legacy TO-247 footprint compatibility and lower cost where 0.8 mΩ higher R_DS(on) is tolerable.

Compared with STL220N6F7AG and IXFH80N06P3, IPB80N06S2L05ATMA1 uniquely balances AEC-Q101 qualification, 5.0 mΩ conduction loss, and 470 mJ avalanche capability in a surface-mount TO-263 package-making it optimal for space-constrained, thermally demanding automotive power modules.

Availability

IPB80N06S2L05ATMA1 is available at Aetrix Electronics and suitable for automotive EPS systems, industrial BLDC motor drives, and 48 V telecom DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IPB80N06S2L05ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 2nd generation N-channel power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive electrification and industrial motor control.

FAQ

What is the maximum pulsed drain current I_DM for IPB80N06S2L05ATMA1?

The absolute maximum pulsed drain current is 320 A per Infineon's official datasheet (Rev. 2.1, 2020). This rating applies for pulse width ≤ 10 µs and duty cycle ≤ 1%, with T_C ≤ 25°C. Exceeding these conditions risks irreversible bond-wire fusing or silicon damage due to localized thermal runaway.

Does IPB80N06S2L05ATMA1 support 3.3 V gate drive?

No - its gate threshold voltage V_GS(th) range is 2.0–4.0 V, but full enhancement requires ≥10 V V_GS to achieve rated R_DS(on) ≤ 5.0 mΩ. At 3.3 V, R_DS(on) exceeds 25 mΩ, causing excessive conduction loss. A level-shifting gate driver or 12 V supply is mandatory for specified performance.

Is the TO-263-3 package lead-free and RoHS compliant?

Yes - IPB80N06S2L05ATMA1 uses lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The "ATMA1" suffix denotes tape-and-reel packaging with Pb-free plating and halogen-free molding compound, verified per Infineon's material declaration ID 2021-00174.

How does the body diode's reverse recovery behavior impact synchronous rectifier design?

With t_rr = 55 ns and Q_rr = 120 nC, the body diode enables clean commutation in synchronous rectifiers up to 200 kHz. However, mismatched t_rr between paralleled devices can cause current imbalance; therefore, unit-to-unit matching within ±10% is recommended for parallel operation in high-current PSU designs.

IPB80N06S2L05ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2L05ATMA1 FAQ

1.How can I place an order for IPB80N06S2L05ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2L05ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2L05ATMA1 reliable?

The price and inventory of IPB80N06S2L05ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2L05ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2L05ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2L05ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2L05ATMA1?

IPB80N06S2L05ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2L05ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2L05ATMA1?

For technical support, including IPB80N06S2L05ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2L05ATMA1 requirements.

6.How does Aetrix verify that IPB80N06S2L05ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2L05ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2L05ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2L05ATMA1?

All IPB80N06S2L05ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2L05ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2L05ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N06S2L05ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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