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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S2L06ATMA1

Name: IPB80N06S2L06ATMA1
Brand: Infineon Technologies
SKU: IPB80N06S2L06ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2L06ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2L06ATMA1.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2L06ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low 4.8–6.3 mΩ R_DS(on) at V_GS = 10 V, with AEC-Q101 qualification and 175 °C operation-used in DC-DC converter primary-side switches and motor phase-leg drivers.

For engineers reviewing the IPB80N06S2L06ATMA1 datasheet, IPB80N06S2L06ATMA1 pinout, IPB80N06S2L06ATMA1 application, or IPB80N06S2L06ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V/10 V, single-pulse avalanche energy (530 mJ), thermal resistance (R_thJC = 0.6 K/W), and TO263-3 package compatibility with high-power PCB layouts.

Technical Context

This OptiMOS® power transistor uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V/5 V logic controllers, and its 3800 pF input capacitance and 240 pF reverse transfer capacitance support efficient gate driving in hard-switched topologies.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 60–76 ns reverse recovery time, enabling synchronous rectification replacement in buck converters and reducing external diode count in half-bridge inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 48 V automotive and industrial bus applications
R_DS(on) max @ V_GS=10 V	6.3 mΩ - enables ≤0.5 W conduction loss at 80 A, critical for thermally constrained designs
I_D continuous	80 A @ T_C=25 °C - supports high-current motor drives without parallel devices
E_AS	530 mJ - withstands single-pulse inductive energy in relay/snubberless solenoid control
R_thJC	0.6 K/W - allows >200 W junction-to-case power dissipation with standard heatsink mounting
Q_g total	114–150 nC - determines gate driver current requirement (~1.5 A peak for 100 ns rise time)
V_GS(th)	1.2–2.0 V - ensures full enhancement with 3.3 V microcontroller GPIO or level-shifted PWM signals

Pinout & Package

IPB80N06S2L06ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal relief. The three terminals are arranged in standard TO263 layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Accepts logic-level voltage (≥4.5 V) to fully enhance channel; requires <150 nC total gate charge
Pin 2 (Drain)	High-side power terminal	Exposed copper tab - must be soldered to ≥6 cm² PCB copper pour for thermal management
Pin 3 (Source)	Reference node / return path	Connects to power ground or low-side switch source; defines gate-source reference for drive signal

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis systems per stress test requirements
100% avalanche tested	Each unit passes single-pulse E_AS screening at 530 mJ, ensuring robustness in inductive load switching
Logic-level gate drive	Turns on fully at V_GS = 4.5 V, eliminating need for gate driver ICs in 5 V MCU-based designs
Green package	Lead-free, RoHS-compliant construction with MSL1 rating for 260 °C reflow compatibility
175 °C operating temperature	Enables deployment in engine bay or industrial enclosures without derating at ambient >125 °C

Applications

Automotive Body Control Module (BCM)

Industrial DC-DC Converter Primary Switch

Use Scenario: High-side load switching for headlights, HVAC blowers, and seat motors in 12 V/24 V vehicle architectures.

IC Role / Device Role / Timing Role: N-channel high-side switch with integrated charge pump or external bootstrap circuit for gate bias.

Use Value: 4.8 mΩ R_DS(on) minimizes heat generation during continuous 60–80 A loads, extending module lifetime under vibration and thermal cycling.

Use Scenario: Primary-side switching element in 400 W–1 kW isolated flyback or forward converters for PLC power supplies.

IC Role / Device Role / Timing Role: Hard-switched main power FET driven by UC384x or similar controller with 100 ns–1 µs dead-time control.

Use Value: Low Q_gd/Q_gs ratio (≈3) reduces Miller-induced shoot-through risk and improves efficiency at 100–500 kHz switching frequencies.

Motor Drive Half-Bridge Leg

Server PSU OR-ing FET

Use Scenario: Low-side switch in three-phase inverter stages for BLDC fans and servo actuators in factory automation.

IC Role / Device Role / Timing Role: Synchronized switching element with fast 20 ns fall time and 60 ns turn-off delay for precise PWM timing.

Use Value: 80 A pulsed current rating supports 3× motor stall current surges without thermal runaway when mounted on 6 cm² copper.

Use Scenario: Hot-swap and redundancy MOSFET in 12 V server backplane power distribution units.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-R_DS(on) pass device controlled by LM5069 or discrete comparator circuitry.

Use Value: 0.9 V V_SD body diode forward drop enables low-loss reverse-current blocking during hot-insertion events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L-06	TO-220-3 through-hole package; identical electrical specs but higher R_thJA (62 K/W vs. 40 K/W on PCB)	Better suited for prototyping or low-volume assemblies where manual soldering is preferred	Select when board space permits larger footprint and thermal via access is limited
IPB80N06S4-04	Lower R_DS(on) (4.0 mΩ @ 10 V) but higher Q_g (170 nC); same TO263-3 package	Optimized for higher-efficiency, lower-frequency (<100 kHz) applications with stronger gate drivers	Choose when conduction loss dominates over switching loss and gate drive capability ≥2 A is available

Compared with IPP80N06S2L-06 and IPB80N06S4-04, IPB80N06S2L06ATMA1 balances low R_DS(on), moderate gate charge, and surface-mount reliability-making it optimal for volume automotive PCBs requiring AEC-Q101 compliance and thermal performance at 200–500 kHz.

Availability

IPB80N06S2L06ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, motor drive half-bridge legs, and server PSU OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IPB80N06S2L06ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-current, high-reliability switching in automotive and industrial environments where AEC-Q101 compliance and thermal robustness are mandatory.

FAQ

Is IPB80N06S2L06ATMA1 pin-compatible with IPP80N06S2L-06?

No. IPB80N06S2L06ATMA1 uses PG-TO263-3-2 (D²PAK) surface-mount packaging with drain-tab-down orientation, while IPP80N06S2L-06 uses PG-TO220-3-1 through-hole packaging. Footprint, thermal pad layout, and mechanical mounting differ fundamentally-PCB redesign is required for substitution.

What is the maximum recommended gate resistor value for 100 kHz switching?

For 100 kHz hard-switching with 150 nC Q_g, a 10 Ω gate resistor limits peak current to ~1.5 A and achieves ~100 ns rise/fall times. Values above 22 Ω increase switching losses significantly; below 5 Ω risks ringing and overshoot without proper gate loop inductance control.

Does this MOSFET require a negative gate turn-off voltage?

No. The device has no requirement for negative V_GS; it is fully specified for 0 V to +10 V gate drive. However, applying –5 V during turn-off improves noise immunity in high-dV/dt environments and reduces cross-conduction risk in half-bridge configurations.

Can IPB80N06S2L06ATMA1 replace older IPB80N06S2-07 in existing designs?

Yes, with verification. Both share identical TO263-3 package and pinout, but IPB80N06S2L06ATMA1 offers lower R_DS(on) (6.3 mΩ vs. 7.5 mΩ) and improved avalanche ruggedness (530 mJ vs. 450 mJ). Thermal and layout validation is advised due to higher current density and revised safe operating area curves.

IPB80N06S2L06ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 69A, 10V

Vgs(th) (Max) @ Id:: 2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2L06ATMA1 FAQ

1.How can I place an order for IPB80N06S2L06ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2L06ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2L06ATMA1 reliable?

The price and inventory of IPB80N06S2L06ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2L06ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2L06ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2L06ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2L06ATMA1?

IPB80N06S2L06ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2L06ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2L06ATMA1?

For technical support, including IPB80N06S2L06ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2L06ATMA1 requirements.

6.How does Aetrix verify that IPB80N06S2L06ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2L06ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2L06ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2L06ATMA1?

All IPB80N06S2L06ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2L06ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2L06ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N06S2L06ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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