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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S2L07ATMA3

Name: IPB80N06S2L07ATMA3
Brand: Infineon Technologies
SKU: IPB80N06S2L07ATMA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2L07ATMA3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2L07ATMA3.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2L07ATMA3 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low 6.7 mΩ R_DS(on) (max) at V_GS = 10 V, with AEC-Q101 qualification and 175 °C operation. It serves as a high-efficiency main power switch in DC-DC converters and motor control H-bridges.

For engineers reviewing the IPB80N06S2L07ATMA3 datasheet, IPB80N06S2L07ATMA3 pinout, IPB80N06S2L07ATMA3 application, or IPB80N06S2L07ATMA3 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (450 mJ), thermal resistance (R_thJC = 0.7 K/W), and TO-263-3 package compatibility with high-current PCB layouts.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V logic controllers, and its 95–130 nC total gate charge supports efficient PWM operation up to several hundred kHz.

The integrated body diode exhibits 59–75 ns reverse recovery time and 80–100 nC Q_rr, making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Thermal design is enabled by MSL1 reflow compatibility and validated junction-to-case thermal resistance of 0.7 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus systems
R_DS(on) max @ 10 V	6.7 mΩ - Enables <1 W conduction loss at 80 A, reducing heatsink requirements
I_D continuous	80 A @ T_C = 25 °C - Sustained high-current capability without derating below 100 °C case temperature
E_AS	450 mJ - Confirmed single-pulse avalanche robustness for inductive load switching
Q_g	95–130 nC - Determines gate driver power and switching transition times in PWM circuits
R_thJC	0.7 K/W - Allows precise junction temperature estimation using measured case temperature
t_r/t_f	35 ns / 31 ns - Supports >200 kHz switching with controlled EMI in compact power stages

Pinout & Package

IPB80N06S2L07ATMA3 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB copper area thermal coupling. The package meets MSL1 reflow standard (peak 260 °C) and supports 6 cm² cooling area on FR4 PCB.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level gate drive; threshold 1.2–2.0 V enables 3.3 V MCU compatibility
Pin 2 (Drain)	High-current output	Internally connected to large copper tab; requires ≥6 cm² PCB copper for thermal management
Pin 3 (Source)	Power return reference	Serves as local ground reference for gate drive and current sensing; low-inductance layout critical

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood environments including temperature cycling and humidity exposure
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate boosters in 5 V systems
100% avalanche tested	Each unit verified for 450 mJ single-pulse energy, ensuring reliability in inductive fault conditions
Green package	Lead-free, RoHS-compliant construction with halogen-free molding compound
Ultra-low R_DS(on)	6.7 mΩ max at 10 V enables >97% efficiency in 48 V input buck converters at 60 A

Applications

Automotive Body Control Module

Industrial Motor Drive Inverter

Use Scenario: High-side load switching for headlight, fan, and pump control in 12 V/24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Main power switch handling up to 80 A inductive loads with integrated avalanche protection.

Use Value: Eliminates external flyback diodes and reduces BOM count due to robust 450 mJ avalanche rating.

Use Scenario: Half-bridge leg in 3-phase BLDC motor drives for HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element with fast 31 ns fall time enabling <500 ns dead-time control.

Use Value: 6.7 mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 10 mΩ MOSFETs at 60 A, lowering thermal stress.

Server PSU OR-ing Circuit

EV Onboard Charger DC Link Switch

Use Scenario: Hot-swap and redundancy management in 48 V intermediate bus architectures.

IC Role / Device Role / Timing Role: Reverse-polarity protected OR-ing FET with low forward voltage drop in body diode mode.

Use Value: 0.9–1.3 V V_SD at 80 A ensures <1.04 W diode conduction loss, improving system efficiency over Schottky solutions.

Use Scenario: Primary-side switching in bidirectional AC/DC converters for plug-in hybrid vehicles.

IC Role / Device Role / Timing Role: High-reliability 55 V switch rated for 175 °C junction operation in sealed charger enclosures.

Use Value: AEC-Q101 qualification and 100% avalanche test ensure compliance with ISO 26262 ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L-07	Same die, TO-220-3 through-hole package; R_thJA = 62 K/W (leaded) vs. 40 K/W (SMD w/6 cm²)	Better suited for prototyping or low-volume assemblies where soldering infrastructure is limited	Select IPP80N06S2L-07 when manual assembly or socket-based testing is required
IPB80N06S4-05	Newer OptiMOS™ 4 generation; 5.0 mΩ R_DS(on) max @ 10 V, but higher Q_g (145 nC) and no AEC-Q101 certification	Higher efficiency at light loads but unsuitable for automotive qualified designs	Choose IPB80N06S4-05 only for non-automotive industrial applications prioritizing lowest R_DS(on)

Compared with IPP80N06S2L-07, IPB80N06S2L07ATMA3 offers superior thermal performance in automated SMT lines; versus IPB80N06S4-05, it trades 1.7 mΩ higher R_DS(on) for guaranteed automotive qualification and lower gate charge-driven losses.

Availability

IPB80N06S2L07ATMA3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPB80N06S2L07ATMA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS® 2nd generation power transistor family, engineered specifically for high-current, high-temperature switching in automotive and industrial power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S2L07ATMA3?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 0 V to 10 V for full enhancement, with 4.5 V sufficient for logic-level operation in most applications.

Does IPB80N06S2L07ATMA3 require a gate resistor for safe switching?

Yes - a gate resistor (typically 2–10 Ω) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The 95–130 nC total gate charge and 32–48 nC Q_gd make uncontrolled gate drive prone to shoot-through in half-bridge configurations without proper gate resistance and layout.

Can IPB80N06S2L07ATMA3 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. Layout symmetry, matched gate drive paths, and thermal coupling via shared PCB copper are essential to achieve balanced current distribution among paralleled devices.

Is the body diode suitable for continuous freewheeling operation?

Yes - the integrated body diode is rated for 80 A continuous forward current at T_C = 25 °C and 320 A pulsed, with 0.9–1.3 V forward voltage at 80 A. Its 59–75 ns t_rr and 80–100 nC Q_rr support use in synchronous rectification, though external Schottky diodes may be preferred for ultra-high-frequency (>1 MHz) applications.

IPB80N06S2L07ATMA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2L07ATMA3 FAQ

1.How can I place an order for IPB80N06S2L07ATMA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2L07ATMA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2L07ATMA3 reliable?

The price and inventory of IPB80N06S2L07ATMA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2L07ATMA3 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2L07ATMA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2L07ATMA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2L07ATMA3?

IPB80N06S2L07ATMA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2L07ATMA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2L07ATMA3?

For technical support, including IPB80N06S2L07ATMA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2L07ATMA3 requirements.

6.How does Aetrix verify that IPB80N06S2L07ATMA3 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2L07ATMA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2L07ATMA3 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2L07ATMA3?

All IPB80N06S2L07ATMA3 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2L07ATMA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2L07ATMA3 part is unused and in its original packaging.

Return procedure for IPB80N06S2L07ATMA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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