Infineon Technologies IPB80N06S2L09ATMA1

Overview

IPB80N06S2L09ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low 6.6–8.2 mΩ R_DS(on) at V_GS = 10 V (SMD version), with AEC-Q101 qualification and 175 °C operation-used in motor control inverters and DC-DC synchronous rectification stages.

For engineers reviewing the IPB80N06S2L09ATMA1 datasheet, IPB80N06S2L09ATMA1 pinout, IPB80N06S2L09ATMA1 application, or IPB80N06S2L09ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V/10 V, avalanche energy (370 mJ), thermal resistance (R_thJC = 0.8 K/W), diode forward voltage (0.9–1.3 V), and gate charge profile (Q_g = 82–105 nC).

Technical Context

This OptiMOS® device employs trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V) enables direct interfacing with 3.3 V/5 V microcontrollers, and its 100% avalanche-tested ruggedness supports unclamped inductive switching in motor drives.

The MOSFET integrates a co-packaged body diode with t_rr = 57–70 ns and Q_rr = 70–90 nC, enabling efficient synchronous rectification. Thermal design is enabled by a low junction-to-case resistance (0.8 K/W) and compatibility with standard TO263-3 PCB footprints featuring ≥6 cm² copper area.

Key Specifications

Pinout & Package

IPB80N06S2L09ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IPP80N06S2L-09 and IPB80N06S4-07, IPB80N06S2L09ATMA1 offers optimal balance of proven ruggedness, mature thermal design data, and cost-effective volume production in automotive-grade SMD form-making it ideal for high-reliability, thermally demanding applications where qualification history matters.

Availability

IPB80N06S2L09ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, server OR-ing circuits, and EV onboard charger DC link stages requiring stable component supply across multi-year production cycles.

Supply support for IPB80N06S2L09ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS® 2 series-designed specifically for high-current, logic-level switching in automotive and industrial power conversion where ruggedness, thermal performance, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S2L09ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to +12 V to +15 V during turn-on and actively pulled to –5 V to 0 V during turn-off to ensure fast, controlled switching and avoid Miller-induced false turn-on.

Does IPB80N06S2L09ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithically integrated fast-recovery body diode rated for 80 A continuous forward current and 320 A pulsed current. Key parameters include V_SD = 0.9–1.3 V at I_F = 80 A and T_j = 25 °C, reverse recovery time t_rr = 57–70 ns, and Q_rr = 70–90 nC-enabling efficient synchronous rectification in buck and LLC converters without external diodes.

How does the thermal resistance R_thJC = 0.8 K/W translate to real-world PCB layout requirements?

R_thJC = 0.8 K/W means that for every watt dissipated at the die, the junction-to-case temperature rise is 0.8 °C. To maintain T_j ≤ 175 °C at 190 W P_tot, the case must be held at ≤ 23 °C-achievable only with ≥6 cm² of 70 µm copper on FR4, vertical orientation, and still air. Layout must fully expose the drain pad and avoid solder mask over thermal pads.

Is IPB80N06S2L09ATMA1 suitable for use in a 48 V mild-hybrid automotive system?

Yes-it is rated for 55 V V_DS with 20 % margin above 48 V nominal bus, qualified to AEC-Q101, and specified for operation up to 175 °C ambient. Its 370 mJ avalanche rating handles load dump transients, and logic-level gate drive interfaces directly with 3.3 V CAN/LIN microcontrollers used in 48 V subsystems such as belt-driven starter generators and DC-DC converters.